Array substrate, liquid crystal display panel and liquid crystal display device

Patent metadata

Field	Value
Publication number	US-10088726-B2
Application number	US-201615208928-A
Country	US
Kind code	B2
Filing date	Jul 13, 2016
Priority date	Jan 25, 2016
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

The array substrate, the liquid crystal display panel and the liquid crystal display device of the present disclosure are designed to from the MIS storage capacitor by the P—Si semiconductor layer, the first metal layer and the insulating layer between above or the P—Si semiconductor layer, the second metal layer and the dielectric spacer layer between above, when one side of the first metal layer or the second metal layer receiving the negative gray voltage, the P—Si in the P—Si semiconductor layer will gather to form the hole, when receiving the positive gray voltage, will form the depletion layer on the upper layer of the P—Si to reduce the capacity of the MIS storage capacitor, thereby reducing the difference of the capacitance when the MIS storage capacitor in the positive and negative gray voltage, improving the flicker phenomena and ensuring the display effect.

First claim

What is claimed is:

1. An array substrate, wherein, the array substrate comprises a substrate and a first metal layer, an insulating layer, a P—Si semiconductor layer, a dielectric spacer layer and a second metal layer formed on the substrate, the first metal layer comprises a first zone and a second zone arranged spaced, the first metal layer of the first zone is the gate electrode of the TFT of the array substrate, the second metal layer comprises a third zone and a fourth zone arranged spaced, the second metal layer of the third zone and the fourth zone are the source electrode and the drain electrode of the TFT, respectively, wherein, the P—Si semiconductor layer and the first metal layer of the second zone are arranged insulated and overlapped through the insulating layer sandwiched between the P—Si semiconductor layer and the first metal layer of the second zone, or the P—Si semiconductor layer and the second metal layer of the fourth zone are arranged insulated and overlapped through the dielectric spacer layer sandwiched between the P—Si semiconductor layer and the second metal layer of the fourth zone to form a MIS storage capacitor of the array substrate; and
wherein, the gate electrode of the TFT is on the P—Si semiconductor layer, the array substrate further comprises a shading metal layer forming on the substrate and a buffer layer arranged between the shading metal layer and the P—Si semiconductor layer, the shading metal layer comprises a fifth zone and a sixth zone arranged spaced, the fifth zone is under the first zone, the second metal layer further comprises a seventh zone arranged spaced and adjacent with the fourth zone and away from the third zone, the P—Si semiconductor layer connects the shading metal layer of the sixth zone through the second metal layer of the seventh zone, the first metal layer of the second zone connects the second metal layer of the second zone, so that the MIS storage capacitor of the array substrate is formed by the P—Si semiconductor layer, the first metal layer of the second zone and the insulating layer between above.

2. The array substrate according to claim 1 , wherein, the P—Si semiconductor layer comprises a P—Si layer after heavy doping treatment.

3. A liquid crystal display panel, wherein, the liquid crystal display panel comprises the array substrate as claimed in claim 1 .

4. A liquid crystal display device, wherein, the liquid crystal display device comprises a liquid crystal display panel and a light source module providing light to the liquid crystal display panel, wherein, the liquid crystal display panel is the liquid crystal display panel according to claim 3 .

Assignees

• Wuhan China Star Optoelectronics Technology Co Ltd
• Wuhan China Star Optoelectronics Technology Co Ltd

Inventors

• Yan Yao
• Cao Shangcao

Classifications

• G02F1/1368 Primary

  in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} · CPC title

• H01L27/1255

  Electricity · mapped topic

• H01L27/1222

  Electricity · mapped topic

• G02F2202/104

  poly-Si · CPC title

• G02F1/136213

  Storage capacitors associated with the pixel electrode · CPC title