Copper alloy wire, copper alloy stranded wire, covered electric wire, and terminal-fitted electric wire
US-2015371726-A1 · Dec 24, 2015 · US
Substrate for epitaxial growth, manufacturing method therefor, and substrate for superconducting wire
US10087552B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10087552-B2 |
| Application number | US-201314432827-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 23, 2013 |
| Priority date | Oct 5, 2012 |
| Publication date | Oct 2, 2018 |
| Grant date | Oct 2, 2018 |
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Abstract
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An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum Δϕ of a peak based on the pole figure of the copper layer is within 5° and the tail width Δβ of the peak based on the pole figure is within 15° Such a substrate for epitaxial growth is manufactured by a 1 st step of performing heat treatment of a copper layer so that Δϕ is within 6° and the tail width Δβ is within 25°, and after the 1 st step, a 2 nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1 st step, so that Δϕ is within 5° and the tail width Δβ is within 15°.
First claim
Opening claim text (preview).
We claim: 1. A substrate for epitaxial growth, containing a biaxially crystal-oriented copper layer, wherein the full width at half maximum ΔΦ of a peak based on the pole figure of the copper layer is within 5°, and the tail width Δβ of the peak based on the pole figure is within 15°. 2. The substrate for epitaxial growth according to claim 1 , further comprising a protective layer containing nickel or a nickel alloy on the copper layer, wherein the protective layer has a thickness of 1 μm or more and 5 μm or less, the full width at half maximum ΔΦ of a peak based on the pole figure of the protective layer is within 6°, and the surface roughness Ra is 20 nm or less. 3. The substrate for epitaxial growth according to claim 1 , further comprising a protective layer containing nickel or a nickel alloy on the copper layer, wherein the protective layer has the full width at half maximum Δφ of a peak based on the pole figure of the protective layer is within 6°, and the surface roughness Ra is 20 nm or less. 4. A method for manufacturing the substrate for epitaxial growth according to claim 1 , comprising a 1st step of performing heat treatment of a copper layer so that ΔΦ is within 6° and the tail width Δβ is within 25°, and a 2nd step of performing heat treatment of the copper layer after the 1st step at a temperature higher than the temperature for heat treatment in the 1st step, so that ΔΦ is within 5° and the tail width Δβ is within 15°. 5. A substrate for a superconducting wire, comprising the substrate for epitaxial growth according to claim 1 laminated on a nonmagnetic metal plate. 6. A substrate for a superconducting wire, comprising the substrate for epitaxial growth according to claim 2 laminated on a nonmagnetic metal plate.
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Classifications
Films or wires on bases or cores · CPC title
with tin as the next major constituent · CPC title
- C22F1/08Primary
of copper or alloys based thereon · CPC title
being provided with a buffer layer, e.g. a lattice matching layer · CPC title
Electricity · mapped topic
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- What does patent US10087552B2 cover?
- An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum Δϕ of a peak based on the pole figure of the copper layer is withi…
- Who is the assignee on this patent?
- Toyo Kohan Co Ltd, Sumitomo Electric Industries
- What technology area does this patent fall under?
- Primary CPC classification C22F1/08. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 02 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).