Implantation using solid aluminum iodide (AlI3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

Patent metadata

Field	Value
Publication number	US-10087520-B2
Application number	US-201715627952-A
Country	US
Kind code	B2
Filing date	Jun 20, 2017
Priority date	Jun 21, 2016
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

First claim

The invention claimed is:

1. An ion implantation system, comprising:
an ion source configured to form an ion beam from aluminum iodide;
a beamline assembly configured to selectively transport the ion beam;
an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece;
a water delivery system configured to introduce water or water vapor to one or more of the ion source, beamline assembly, and end station, wherein the water delivery system is configured to react the water or water vapor with residual aluminum iodide formed on one or more internal surfaces of one or more the ion source, beamline assembly, and end station; and
a vacuum system configured to substantially evacuate one or more of the ion source, beamline assembly, and end station, wherein the vacuum system is further configured to substantially remove one or more products of the reaction of the water or water vapor with the reacted residual aluminum iodide from the respective ion source, beamline assembly, and end station.

2. The ion implantation system of claim 1 , further comprising:
a solid-state material source comprising the aluminum iodide in a solid form; and
a solid source vaporizer configured to vaporize the aluminum iodide, thus defining gaseous aluminum iodide, wherein the ion source comprises an arc chamber configured to form a plasma from the gaseous aluminum iodide and to dissociate aluminum ions from the gaseous aluminum iodide, and wherein the water delivery system is configured to introduce the water or water vapor to the arc chamber.

3. The ion implantation system of claim 2 , where the ion source further comprises one or more extraction electrodes configured to extract the ion beam from the arc chamber, wherein the water delivery system is further configured to introduce the water or water vapor to the one or more extraction electrodes.

4. The ion implantation system of claim 2 , wherein the solid source vaporizer comprises one or more heating elements configured to heat the aluminum iodide to a vaporization temperature.

5. The ion implantation system of claim 2 , wherein the solid source vaporizer is configured to heat the aluminum iodide to between approximately 90° C. and 100° C.

6. The ion implantation system of claim 1 , wherein the workpiece comprises silicon carbide.

7. The ion implantation system of claim 1 , wherein the aluminum iodide is in one or more a powder form, a granular form, and a bulk solid form.

8. A method for cleaning one or more components of an ion implantation system, the method comprising:
providing a residual aluminum iodide material on one or more internal surfaces of the one or more components;
introducing water vapor to the one or more internal surfaces of the one or more components, therein reacting the residual aluminum iodide with the water vapor to form hydroiodic acid; and
evacuating the ion implantation system, therein removing the residual aluminum iodide and hydroiodic acid.

9. The method of claim 8 , comprising iteratively introducing the water vapor and evacuating the ion implantation system.

10. The method of claim 8 , wherein the water vapor is introduced in-situ.

11. The method of claim 8 , further comprising introducing the water vapor and evacuating the ion implantation system.

12. The method of claim 8 , wherein providing the residual aluminum iodide material on the one or more internal surfaces of the one or more components comprises implanting ions aluminum ions into a workpiece via an ionization of aluminum iodide, wherein the residual aluminum iodide forms on the one or more internal surfaces of the one or more components.

13. The method of claim 8 , wherein the one or more components comprise one or more of an ion source and an extraction electrode.

14. A method for cleaning an ion implantation system, wherein the method comprises:
implanting ions aluminum ions into a workpiece via an ionization of aluminum iodide;
introducing water vapor to the ion implantation system after implanting the aluminum ions, therein reacting the water vapor with residual aluminum iodide formed on one or more internal surfaces of one or more components of the ion implantation system; and
evacuating the ion implantation system, therein removing one or more products of the reaction of the water vapor with the reacted residual aluminum iodide from the ion implantation system.

15. The method of claim 14 , wherein reacting the water vapor with the residual aluminum iodide forms hydroiodic acid.

16. The method of claim 14 , wherein introducing water vapor and evacuating the ion implantation system are performed iteratively.

17. The method of claim 14 , wherein introducing water vapor to the ion implantation system comprises vaporizing water and introducing the vaporized water to an ion source of the ion implantation system.

18. The method of claim 14 , wherein the water vapor reacts with aluminum iodide that has been sputtered onto cool surfaces within the ion implantation system.

19. The method of claim 14 , further comprising forming an argon ion beam concurrent with the introduction of the water vapor to the ion implantation system, therein maintaining a warm environment within the ion implantation system.

20. The method of claim 14 , further comprising performing a shut down beam concurrent with introducing water vapor to the ion implantation system, wherein the shut down beam comprises maintaining an active argon plasma in an arc chamber of the ion implantation system, thereby substantially preventing a non-ionizing environment concurrent with cooling down the ion implantation system.

Assignees

• Axcelis Tech Inc

Inventors

• Kamenitsa Dennis Elliott
• Rzeszut Richard J
• Silva Fernando M
• Colvin Neil K

Classifications

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title