Oxide sintered body and semiconductor device

Patent metadata

Field	Value
Publication number	US-10087517-B2
Application number	US-201515100174-A
Country	US
Kind code	B2
Filing date	Apr 8, 2015
Priority date	Oct 22, 2014
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

First claim

The invention claimed is:

1. An oxide sintered body comprising indium, tungsten, and at least one of zinc and tin, wherein
said oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin,
further including a bixbite type phase as a crystal phase.

2. The oxide sintered body according to claim 1 , wherein
a double phase occupancy rate, which is an occupancy rate of a total area of said complex oxide crystal phase and said bixbite type phase to an area of a cross section of said oxide sintered body in said cross section, is equal to or higher than 95% and equal to or lower than 100%.

3. The oxide sintered body according to claim 1 , wherein
a complex oxide crystal phase occupancy rate, which is an occupancy rate of an area of said complex oxide crystal phase to an area of a cross section of said oxide sintered body in said cross section, is higher than 0% and equal to or lower than 50%.

4. The oxide sintered body according to claim 1 , wherein
said complex oxide crystal phase includes at least one type of crystal phase selected from the group consisting of a ZnWO 4 type phase, a Zn 2 W 3 O 8 type phase, a WSnO 4 type phase, a WSn 2 O 5 type phase, and a WSn 3 O 6 type phase.

5. The oxide sintered body according to claim 1 , wherein
a content rate of tungsten to all metal elements and silicon included in said oxide sintered body is equal to or higher than 0.5 atomic % and equal to or lower than 20 atomic %.

6. The oxide sintered body according to claim 1 , wherein
a content rate of at least one type of element selected from the group consisting of aluminum, titanium, chromium, gallium, hafnium, zirconium, silicon, molybdenum, vanadium, niobium, tantalum, and bismuth to all metal elements and silicon included in said oxide sintered body is equal to or higher than 0.1 atomic % and equal to or lower than 10 atomic %.

7. A semiconductor device comprising an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as recited in claim 1 as a target.

Assignees

• Sumitomo Electric Industries

Inventors

• Miyanaga Miki
• Watatani Kenichi
• Sogabe Koichi
• Awata Hideaki
• Kurisu Kenichi

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title

• C04B35/00

  Shaped ceramic products characterised by their composition {(porous ceramic products C04B38/00; ceramic articles characterised by particular shape, see the relevant classes, e.g. linings for casting ladles, tundishes, cups or the like B22D41/02; ceramic substrates for microelectronic semi-conductors H10W70/692)}; Ceramics compositions ({shaping of ceramics B28B;} containing free metal bonded to carbides, diamond, oxides, borides, nitrides, silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides or sulfides other than as macroscopic reinforcing agents C22C); Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products {(infiltration of sintered ceramic preforms with molten metal C04B41/51; chemical preparation of powders of inorganic compounds C01)} · CPC title

• H01B1/08 Primary

  oxides · CPC title

• C04B2235/3284

  Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof · CPC title