Microelectronic device having an air core inductor

US10085342B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10085342-B2
Application numberUS-201615376872-A
CountryUS
Kind codeB2
Filing dateDec 13, 2016
Priority dateDec 13, 2016
Publication dateSep 25, 2018
Grant dateSep 25, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A microelectronic device incorporating an air core inductor having one or more inserts to provide efficiency of the inductor are described. One or more inserts having a selected permeability may be placed within regions defined by coils of the air core inductor. The inserts can be formed of a solid material of the selected permeability or such a material can be applied to other structures, such as circuit components. Other embodiments may be described and/or claimed.

First claim

Opening claim text (preview).

The invention claimed is: 1. A microelectronic device, comprising a substrate; an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater; wherein dielectric material extends into at least one of the first and second central regions, and wherein the at least one insert is placed within a trench in the dielectric material in the at least one of the first and second central regions. 2. The microelectronic device of claim 1 , further comprising a semiconductor die coupled to a first side of the substrate. 3. The microelectronic device of claim 1 , wherein each of the first and second central regions includes at least one insert having a relative permeability of 2 or greater. 4. A microelectronic device, comprising a substrate; an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater; wherein the air core inductor further comprises a shorting bar extending between the first and second multilayer coils. 5. The microelectronic device of claim 1 , wherein the at least one insert comprises a plurality of inserts within the dielectric material in at least one of the first and second central regions. 6. The microelectronic device of claim 1 , wherein at least one insert is a solid material having a permeability of at least 1.0×10 −5 henries per meter. 7. The microelectronic device of claim 6 , wherein the at least one insert comprises at least one of a ferrite material and an iron composite material. 8. A microelectronic device, comprising a substrate; an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater; wherein the at least one insert comprises a dielectric ceramic ferrite material including at least one of barium ferrite, strontium ferrite, a manganese-zinc ferrite, and a nickel-zinc ferrite. 9. The microelectronic device of claim 6 , wherein the solid material comprises ferrite nanoparticles. 10. A microelectronic device, comprising: a substrate; an air core inductor supported by the substrate, the air core inductor includes a first coil extending around a first central region and a second coil extending around a second central region; and at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater; wherein at least one insert comprises an electrical component. 11. The microelectronic device of claim 10 , wherein the electrical component is a passive electrical component that is coated with at least one of a ferrite material and an iron composite material. 12. A method of making a microelectronic device, comprising: forming an air core inductor on a substrate, the air core inductor defining a first coil extending around a first central region and a second coil extending around a second central region, wherein dielectric material extends into each of the first and second central regions; and placing an insert in respective recesses in the dielectric material in each of the first and second central regions, the inserts having a relative permeability of 2 or greater. 13. The method of claim 12 , wherein the forming of an air core inductor on the substrate comprises forming a plurality of planar metallization layers separated by dielectric material, wherein each of the planar metallization layers defines a respective layer of each of the first and second multilayer coils, and wherein the planar layers of each coil are successively coupled through vertical interconnects to form the first and second multilayer coils. 14. The method of claim 12 , further comprising coupling a semiconductor die to the die-receiving surface of the substrate with a first contact on the die receiving surface of the substrate coupled to a power supply input node on the semiconductor die, wherein the first contact is electrically coupled to a node of the air core inductor. 15. The method of claim 12 , wherein the air core inductor is formed as an integral structure of the substrate. 16. The method of claim 12 , wherein placing at least one of the first and second inserts comprises sputtering a high permeability material into at least one of the first and second central regions. 17. The method of claim 12 , wherein at least one insert is a solid material having a permeability of at least 1.0×10 −5 henries per meter. 18. The method of claim 17 , wherein the at least one insert comprises at least one of a ferrite material and an iron composite material. 19. A method of making a microelectronic device, comprising: forming an air core inductor on a substrate, the air core inductor defining a first coil extending around a first central region and a second coil extending around a second central region; and placing an insert in each of the first and second central regions, the inserts having a relative permeability of 2 or greater; wherein the at least one insert comprises a dielectric ceramic ferrite material including at least one of barium ferrite, strontium ferrite, a manganese-zinc ferrite, and a nickel-zinc ferrite. 20. The method of claim 12 , wherein at least one insert comprises an electrical component. 21. An electronic system, comprising: a microelectronic device, comprising, a semiconductor die; a substrate coupled to the semiconductor die, the substrate including, an air core inductor supported by the substrate, the air core inductor including a first coil extending around a first central region and a second coil extending around a second central region wherein dielectric material extends into at least one of the first and second central regions; and at least one insert in at least one of the first and second central regions, the insert having a relative permeability of 2 or greater, wherein the at least one insert is placed within a recess in the dielectric material in the at least one of the first and second central regions; and at least one of a mass storage device and a network interface operably coupled to the microelectronic device. 22. The electronic system of claim 21 , wherein at least one insert is a solid material having a permeability of at least 1.0×10 −5 henries per meter. 23. The electronic system of claim 21 , wherein the at least one insert comprises a ferrite material including at least one of barium ferrite, strontium ferrite, a manganese-zinc ferrite, and a nickel-zinc ferrite.

Assignees

Inventors

Classifications

  • for inductive purposes, e.g. printed inductor with ferrite core · CPC title

  • structurally combined with ferromagnetic material · CPC title

  • H05K1/165Primary

    incorporating printed inductors · CPC title

  • with the coil helically wound around a magnetic core · CPC title

  • between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10085342B2 cover?
A microelectronic device incorporating an air core inductor having one or more inserts to provide efficiency of the inductor are described. One or more inserts having a selected permeability may be placed within regions defined by coils of the air core inductor. The inserts can be formed of a solid material of the selected permeability or such a material can be applied to other structures, such…
Who is the assignee on this patent?
Intel Corp
What technology area does this patent fall under?
Primary CPC classification H05K1/165. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).