Level shifter circuit

Patent metadata

Field	Value
Publication number	US-10084451-B2
Application number	US-201715481266-A
Country	US
Kind code	B2
Filing date	Apr 6, 2017
Priority date	Jun 9, 2016
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

Techniques are disclosed for a level shifter configured to adjust current flow in response to measured current fluctuations due to common mode noise in the level shifter. For example, the level shifter includes a low-side control circuit configured to adjust a first current flowing into a first low-side terminal of an active high voltage level shifter device in response to a difference between the first low-side current and a second low-side current flowing into a second low-side terminal of an inactive high voltage level shifter device. The level shifter further includes a high-side receiver circuit configured to detect a difference between a first high-side current flowing into a first high-side terminal of the active high voltage level shifter device and a second high-side current flowing into a second high-side terminal of the inactive high voltage level shifter device.

First claim

What is claimed is:

1. A high voltage level shifter configured to translate an input signal from a low-side low voltage domain to a high-side low voltage domain, the high voltage level shifter comprising:
a first series connection comprising a first high-side resistor, a first transistor, and a first low-side resistor,
a second series connection comprising a second high-side resistor, a second transistor, and a second low-side resistor,
a low-side control circuit configured to control the first transistor and the second transistor, the low-side control circuit configured to receive the input signal and a feedback signal indicating a difference between a first current through the first low-side resistor and a second current through the second low-side resistor.

2. The high voltage level shifter of claim 1 , wherein the low-side control circuit is configured to control the first transistor and second transistor such that the difference between the first current and the second current corresponds to a target value.

3. The high voltage level shifter of claim 1 , further comprising:
a high-side receiver circuit configured to set a state of a high-side output signal in response to the difference between a third current through the first high-side resistor and a fourth current through the second high-side resistor.

4. The high voltage level shifter of claim 3 , wherein the high-side receiver circuit comprises a first high-side cross-coupled device and a second high-side cross-coupled device, wherein each of the first high-side cross-coupled device and the second high-side cross-coupled device comprises:
a control terminal;
an output terminal; and
a common terminal;
wherein the common terminal of the first high-side cross-coupled device is connected to the control terminal of the second high-side cross-coupled device and a connection point between the first high-side resistor and the first transistor; and
wherein the common terminal of the second high-side cross-coupled device is connected to the control terminal of the first high-side cross-coupled device and a connection point between the second high-side resistor and the second transistor.

5. The high voltage level shifter of claim 4 ,
wherein each of the first high-side cross-coupled device and the second high-side cross-coupled device is a vertical bipolar transistor;
wherein each corresponding control terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is a base terminal of the vertical bipolar transistor;
wherein each corresponding common terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is an emitter terminal of the vertical bipolar transistor;
wherein each corresponding output terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is a collector terminal of the vertical bipolar transistor; and
wherein each of an emitter region and a base region of the vertical bipolar transistor has no direct PN junction to a positive rail of the high-side domain.

6. The high voltage level shifter of claim 4 ,
wherein each of the first high-side cross-coupled device and the second high-side cross-coupled device is a vertical MOS transistor;
wherein each corresponding control terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is a gate terminal of the vertical MOS transistor;
wherein each corresponding common terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is a source terminal of the vertical MOS transistor;
wherein each corresponding output terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is a drain terminal of the vertical MOS transistor; and
wherein a source region of the vertical MOS transistor has no direct PN junction to a positive rail of the high-side domain.

7. The high voltage level shifter of claim 1 , further comprising a differential amplifier configured to output the feedback signal.

8. The high voltage level shifter of claim 1 , further comprising a first low-side cross-coupled device and a second cross-coupled device, wherein each of the first low-side cross-coupled device and the second cross-coupled device comprise:
a control terminal;
an output terminal; and
a common terminal;
wherein the common terminal of the first low-side cross-coupled device is connected to the control terminal of the second low-side cross-coupled device and the first low-side resistor; and
wherein the common terminal of the second low-side cross-coupled device is connected to the control terminal of the first low-side cross-coupled device and the second low-side resistor.

9. The high voltage level shifter of claim 1 , wherein the low-side control circuit is configured to combine the input signal and the feedback signal to control the first transistor and the second transistor.

10. A method comprising:
receiving, by a low-side control circuit, an input signal from a low-side low voltage domain;
controlling, by the low-side control circuit, a first transistor and a second transistor in response to the input signal and a feedback signal indicating a difference between a first current through a first low-side resistor and a second current through a second low-side resistor,
wherein a first high-side resistor, the first transistor, and the first low-side resistor are connected in series, and
wherein a second high-side resistor, the second transistor, and the second low-side resistor are connected in series.

11. The method of claim 10 , wherein controlling the first transistor and the second transistor further comprises controlling the first transistor and second transistor such that the difference between the first current and the second current corresponds to a target value.

12. The method of claim 10 , further comprising:
setting, by a high-side receiver circuit, a state of a high-side output signal in response to a difference between a third current through the first high-side resistor and a fourth current through the second high-side resistor.

13. The method of claim 12 , wherein the high-side receiver circuit comprises a first high-side cross-coupled device and a second high-side cross-coupled device, wherein each of the first high-side cross-coupled device and the second high-side cross-coupled device comprises:
a control terminal;
an output terminal; and
a common terminal;
wherein the common terminal of the first high-side cross-coupled device is connected to the control terminal of the second high-side cross-coupled device and a connection point between the first high-side resistor and the first transistor; and
wherein the common terminal of the second high-side cross-coupled device is connected to the control terminal of the first high-side cross-coupled device and a connection point between the second high-side resistor and the second transistor.

14. The method of claim 13 ,
wherein each of the first high-side cross-coupled device and the second high-side cross-coupled device is a vertical bipolar transistor;
wherein each corresponding control terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is a base terminal of the vertical bipolar transistor;
wherein each corresponding common terminal of the first high-side cross-coupled device and the second high-side cross-coupled device is an emitter terminal of the vertical bipolar transistor;
wherein each corresponding output terminal of the first high-side cross-coupled device and

Assignees

• Infineon Technologies Austria Ag

Inventors

• Feldtkeller Martin

Classifications

• H03K19/017518 Primary

  using a combination of bipolar and field effect transistors [BIFET] · CPC title

• H03K3/2885

  the input circuit having a differential configuration · CPC title

• H03K3/356086

  with additional means for controlling the main nodes (H03K3/356104, H03K3/3562 take precedence) · CPC title