Mask

US10084133B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10084133-B2
Application numberUS-201615011444-A
CountryUS
Kind codeB2
Filing dateJan 29, 2016
Priority dateApr 28, 2015
Publication dateSep 25, 2018
Grant dateSep 25, 2018

How to read this patent

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A mask including patterned structures arranged sequentially along a predetermined direction and a peripheral area surrounding the patterned structures is provided. Each of the patterned structures includes an opening portion and a thinning portion surrounding the opening portion. The opening portion has through holes arranged in a matrix. An outline of the thinning portion has two side edges opposite to each other substantially parallel to the predetermined direction. The thinning portion is defined by an area demarked by the outline of the thinning portion and an outline of the opening portion. A thickness of the thinning portion is thinner than a thickness of the peripheral area.

First claim

Opening claim text (preview).

What is claimed is: 1. A mask, comprising: a plurality of patterned structures, arranged sequentially along a predetermined direction, wherein each of the plurality of patterned structures comprises: an opening portion, having a plurality of through holes arranged in a matrix; and a thinning portion, surrounding the opening portion, wherein an outer outline of the thinning portion has two side edges opposite to each other, the two side edges are parallel to the predetennined direction, and the thinning portion is defined by an area demarked by the outer outline of the thinning portion and an outer outline of the opening portion, wherein the outer outline of the opening portion forms a non-rectangular shape, the outer outline of the thinning portion forms a rectangular shape and the opening portion is located within the area demarked by the outer outline of the thinning portion forming the rectangular shape; and a peripheral area, surrounding the plurality of patterned structures, wherein a thickness of the thinning portion is thinner than a thickness of the peripheral area. 2. The mask as recited in claim 1 , wherein the thickness of the thinning portion is in range of 35% to 75% of the thickness of the peripheral area. 3. The mask as recited in claim 1 , wherein the mask is shaped in a long strip, and an extending direction of the long strip is parallel to the predetermined direction. 4. The mask as recited in claim 1 , wherein a distance between the outer outline of the opening portion and the outer outline of the thinning portion decreases gradually at first and then increases gradually along the predetermined direction. 5. The mask as recited in claim 1 , wherein the opening portion comprises a plurality of line sections, the line sections are connected to form a grid and define the plurality of through holes. 6. The mask as recited in claim 5 , wherein a thickness of the line sections is thicker than the thickness of the thinning portion. 7. The mask as recited in claim 5 , wherein the thickness of the line sections is equal to the thickness of the peripheral area. 8. The mask as recited in claim 1 , wherein the plurality of patterned structures and the peripheral area are formed by a same patterned sheet. 9. The mask as recited in claim 1 , wherein the opening portion of each of the plurality of patterned structures forms a circular shape, a shortest distance between the outer outline of the opening portion and the outer outline of the thinning portion along the predetermined direction is y, a radius of the circular shape is R, and R/y=Z, wherein 2≥Z≥0.2. 10. The mask as recited in claim 9 , wherein a shortest distance from one opening portion of one of the plurality of patterned structures to a next opening portion of another one of the plurality of patterned structures is DS, and DS>2×Z×R.

Assignees

Inventors

Classifications

  • Electricity · mapped topic

  • C23C14/042Primary

    using masks · CPC title

  • Masking devices (stencils B05C17/06; masking devices for which the means for applying liquids or other fluent material is spraying or is not important B05B12/20) · CPC title

  • H10K71/166Primary

    using selective deposition, e.g. using a mask · CPC title

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Frequently asked questions

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What does patent US10084133B2 cover?
A mask including patterned structures arranged sequentially along a predetermined direction and a peripheral area surrounding the patterned structures is provided. Each of the patterned structures includes an opening portion and a thinning portion surrounding the opening portion. The opening portion has through holes arranged in a matrix. An outline of the thinning portion has two side edges op…
Who is the assignee on this patent?
Au Optronics Corp
What technology area does this patent fall under?
Primary CPC classification H01L51/0011. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).