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Method for manufacturing photo mask and photo mask manufactured with same
US2016011504A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016011504-A1 |
| Application number | US-201314349139-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 26, 2013 |
| Priority date | Apr 19, 2013 |
| Publication date | Jan 14, 2016 |
| Grant date | — |
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Abstract
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Disclosed are a method for manufacturing a photo mask and a photo mask manufactured with the method. The method includes (1) providing a partially finished photo mask, which has effective open areas and ineffective areas located around the effective open areas and (2) applying a half-etching process to form recesses in the ineffective areas. With the recesses formed through a half-etching process in the ineffective areas located around the effective open areas, a mass difference between the effective open areas and the ineffective areas is reduced so that in the process of attracting the photo mask, inconsistent sequence of attraction caused by a great mass difference between the effective open areas and the ineffective areas can be eliminated to thereby ensure that the effective open areas of the photo mask can be laid completely flat on a substrate at predetermined locations and thus ensure the preciseness of a deposited pattern.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method for manufacturing a photo mask, comprising the following steps: (1) providing a partially finished photo mask, wherein the partially finished photo mask comprises a plurality of effective open areas and ineffective areas located around the effective open areas; and (2) applying a half-etching process to form recesses in the ineffective areas. 2 . The method for manufacturing a photo mask as claimed in claim 1 , wherein mass of the ineffective areas is reduced in step (2). 3 . The method for manufacturing a photo mask as claimed in claim 2 , wherein through the reduction of the mass of the ineffective areas in step (2), the ineffective areas that have the same surface area as that of the effective open areas are made to have the same mass as that of the effective open areas. 4 . The method for manufacturing a photo mask as claimed in claim 1 , wherein in step (1), the effective open areas are provided with a plurality of vapor deposition apertures. 5 . The method for manufacturing a photo mask as claimed in claim 1 , wherein the partially finished photo mask is made of a magnetic material and comprises a full sheet mask or a divide mask. 6 . A method for manufacturing a photo mask, comprising the following steps: (1) providing a partially finished photo mask, wherein the partially finished photo mask comprises a plurality of effective open areas and ineffective areas located around the effective open areas; and (2) applying a half-etching process to form recesses in the ineffective areas; and wherein mass of the ineffective areas is reduced in step (2); wherein through the reduction of the mass of the ineffective areas in step (2), the ineffective areas that have the same surface area as that of the effective open areas are made to have the same mass as that of the effective open areas; wherein in step (1), the effective open areas are provided with a plurality of vapor deposition apertures; and wherein the partially finished photo mask is made of a magnetic material and comprises a full sheet mask or a divide mask. 7 . A photo mask, comprising a plurality of effective open areas and ineffective areas located around the effective open areas, the ineffective areas comprising recesses formed therein. 8 . The photo mask as claimed in claim 7 , wherein the recesses reduce mass of the ineffective areas, whereby the ineffective areas that have the same surface area as that of the effective open areas are made to have the same mass as that of the effective open areas. 9 . The photo mask as claimed in claim 7 , wherein the effective open areas are provided with a plurality of vapor deposition apertures. 10 . The photo mask as claimed in claim 7 , wherein the recesses are formed through application of a half-etching process. 11 . The photo mask as claimed in claim 7 , wherein the photo mask is made of a magnetic material and comprises a full sheet mask or a divide mask.
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Frequently asked questions
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- What does patent US2016011504A1 cover?
- Disclosed are a method for manufacturing a photo mask and a photo mask manufactured with the method. The method includes (1) providing a partially finished photo mask, which has effective open areas and ineffective areas located around the effective open areas and (2) applying a half-etching process to form recesses in the ineffective areas. With the recesses formed through a half-etching proce…
- Who is the assignee on this patent?
- Shenzhen China Star Optoelect
- What technology area does this patent fall under?
- Primary CPC classification G03F1/50. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Thu Jan 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).