Light emitting devices having closely-spaced broad-spectrum and narrow-spectrum luminescent materials and related methods
US-9871173-B2 · Jan 16, 2018 · US
US10084119B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10084119-B2 |
| Application number | US-201414899748-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 16, 2014 |
| Priority date | Jun 18, 2013 |
| Publication date | Sep 25, 2018 |
| Grant date | Sep 25, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A light-emitting device ( 1 ) includes a substrate ( 2 ); a wiring pattern ( 3 ), an electrode land ( 4 ), a sealing resin layer ( 5 ), a wire ( 7 ), and a resin dam ( 9 ) that are disposed on the substrate ( 2 ); at least one light-emitting element ( 6 ) that emits light having a peak emission wavelength in a wavelength range of 430 to 480 nm; a green phosphor ( 10 ) that is excited by primary light emitted from the light-emitting element ( 6 ) to emit light having a peak emission wavelength in a green region; and a first red phosphor ( 11 ) that is excited by the primary light to emit light having a peak emission wavelength in a red region. The first red phosphor ( 11 ) emits no light in a wavelength range of 700 nm or more and absorbs no light in a wavelength range of 550 to 600 nm.
Opening claim text (preview).
The invention claimed is: 1. A light-emitting device comprising: at least one light-emitting element; and a sealing resin layer covering the light-emitting element, the sealing resin layer comprising a green phosphor and a first red phosphor, wherein the light-emitting element emits light having a peak emission wavelength in a wavelength range of 430 to 480 nm, the green phosphor is excited by primary light emitted from the light-emitting element to emit light having a peak emission wavelength in a green region that is a wavelength range of 500 to 580 nm, the first red phosphor is excited by the primary light to emit light having a peak emission wavelength in a red region, the first red phosphor emits no light in a wavelength range of 700 nm or more and absorbs no light in a wavelength range of 550 to 600 nm, and further comprising a second red phosphor that is excited by the primary light to emit light having a peak emission wavelength in a red region, wherein the second red phosphor comprises at least two different types of phosphors selected from the group consisting of (i) a (Sr,Ca)AlSiN 3 :Eu phosphor, (ii) a CaAlSiN 3 :Eu phosphor, and (iii) a divalent-europium-activated oxynitride phosphor represented by general formula (E): (Eu a (M7) 1-a ) x Si b Al c O d N e (wherein x satisfies 0.15≤x≤1.5; a satisfies 0≤a≤1; b and c satisfy b+c=12; d and e satisfy d+e=16; and (M7) is at least one of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Sc, Y, La, and Gd), wherein the light-emitting element is an InGaN LED chip, the light-emitting device emits white light, wherein the first red phosphor comprises at least one tetravalent-manganese-activated tetravalent metal fluoride phosphor represented by general formula (A): (M1) 2 ((M2 1-h Mn h )F 6 (wherein (M1) is at least one alkali metal element selected from the group consisting of Li, Na, K, Rb, and Cs; (M2) is at least one tetravalent metal element selected from the group consisting of Ge, Si, Sn, Ti, and Zr; and h satisfies 0.001≤h≤0.1), and wherein the green phosphor comprises at least one phosphor represented by general formula (B): (M3) 3-x Ce x (M4) 5 O 12 (wherein (M3) is at least one of Y, Lu, Gd, and La; (M4) is at least one of Al and Ga; and x satisfies 0.005≤x≤0.20). 2. The light-emitting device according to claim 1 , wherein, in general formula (A), (M1) is K, and (M2) is Si.
between laterally-adjacent chips · CPC title
Package configurations · CPC title
Electricity · mapped topic
Electricity · mapped topic
containing manganese or rhenium · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.