Method for permanent bonding of wafers

Patent metadata

Field	Value
Publication number	US-10083933-B2
Application number	US-201514976484-A
Country	US
Kind code	B2
Filing date	Dec 21, 2015
Priority date	Jan 25, 2011
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

First claim

Having described the invention, the following is claimed:

1. Method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate, said method comprising:
forming a reservoir in a surface layer of the first contact surface;
at least partially filling of the reservoir with one or more first educts;
forming a prebond connection by contacting the first contact surface with the second contact surface; and
forming a permanent bond between the first and second contact surface, said permanent bond at least partially strengthened by reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

2. Method as claimed in claim 1 , wherein the method further comprises plasma activation to form the reservoir, wherein reduced species of the ions present in the plasma process are located in the reservoir.

3. Method as claimed in claim 2 , wherein the reduced species are selected from the group consisting of: O 2 —, N 2 —, H 2 —, and Ar-ions.

4. Method as claimed in claim 1 , wherein between the second contact surface of the second substrate and the reaction layer of the second substrate there is a growth layer comprised of native silicon dioxide.

5. Method as claimed in claim 4 , wherein the growth layer has an average thickness A between 1 angstrom and 10 nm before the formation of the permanent bond.

6. Method as claimed in claim 1 , wherein formation and/or strengthening of the permanent bond takes place by diffusion of the first educt into the reaction layer of the second substrate.

7. Method as claimed in claim 1 , wherein the formation of the permanent bond takes place at a temperature between room temperature and 200° Celsius.

8. Method as claimed in claim 1 , wherein the permanent bond has a bond strength of greater than 1.5 J/m 2 .

9. Method as claimed in claim 1 , wherein during the reaction of the first educt with the second educt a reaction product with a greater molar volume than the molar volume of the second educt is formed in the reaction layer of the second substrate.

10. Method as claimed in claim 1 , wherein the surface layer adjoining the first contact surface of the first substrate is comprised of an amorphous material and the reaction layer of the second substrate is comprised of an oxidizable material.

11. Method as claimed in claim 1 , wherein the reservoir is formed in a vacuum.

12. Method as claimed in claim 1 , wherein the step of at least partially filling the reservoir includes one or more of the following steps:
exposing the first contact surface to a fluid comprising deionized H 2 O and/or H 2 O 2 , and
exposing the first contact surface to N 2 gas and/or O 2 gas and/or Ar gas and/or forming gas comprising 95% Ar and 5% H 2 .

13. Method as claimed in claim 1 , wherein the reservoir is formed with an average thickness between 0.1 nm and 25 nm.

14. Method as claimed in claim 1 , wherein immediately before formation of the permanent bond the average distance between (i) the reservoir in the surface layer adjoining the first contact surface and (ii) the reaction layer of the second substrate is between 0.1 nm and 15 nm.

15. Method as claimed in claim 1 , wherein the permanent bond has a bond strength which comprises 2 times a bond strength of the prebond connection.

Assignees

• Ev Group E Thallner Gmbh

Inventors

• Plach Thomas
• Hingerl Kurt
• Wimplinger Markus
• Flotgen Christoph

Classifications

• H10W72/07331

  Connecting techniques · CPC title

• H10W80/301

  Bonding techniques, e.g. hybrid bonding · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P10/128 Primary

  by direct semiconductor to semiconductor bonding · CPC title