Method of manufacturing an upper electrode of a plasma processing device

Patent metadata

Field	Value
Publication number	US-10081090-B2
Application number	US-201615060384-A
Country	US
Kind code	B2
Filing date	Mar 3, 2016
Priority date	Aug 11, 2011
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

A method of manufacturing an upper electrode of a plasma processing device includes forming a covering layer having plasma resistance on a surface of a main body portion constituting the upper electrode at a side of the processing space; polishing a surface of the covering layer exposed to the processing space; and after the polishing, blasting the surface of the covering layer polished at the polishing.

First claim

What is claimed is:

1. A method of manufacturing an upper electrode of a plasma processing device including a processing vessel configured to define a processing space where plasma is generated, a gas supply unit configured to supply a processing gas into the processing space, a lower electrode provided at a lower side of the processing space, and the upper electrode provided at an upper side of the processing space, the method comprising:
forming a covering layer on a lower surface of a main body portion of the upper electrode facing a side of the processing space where an etching process is performed, the covering layer being formed with a material having plasma resistance:
after forming the covering layer, polishing a surface of the covering layer exposed to the processing space; and
after polishing the covering layer, blasting the surface of the covering layer that has been polished.

2. The method of claim 1 , wherein the covering layer is a Y 2 O 3 layer.

3. The method of claim 1 , wherein the surface of the covering layer that has been polished has a surface area ranging from 20,000 pm 2 to 30,000 pm 2 .

4. The method of claim 1 , wherein ceramic particles are used for blasting the surface of the covering layer and the ceramic particles include at least one of SiO 2 , Al 2 O 3 , Y 2 O 3 , and SiC.

5. The method of claim 1 , wherein, in the polishing the surface of the covering layer, the surface of the covering layer is polished using a polishing pad and a slurry thereby reducing a surface area of the covering layer.

6. The method of claim 5 , wherein the slurry includes diamond abrasive grains.

Assignees

• Tokyo Electron Ltd

Inventors

• Kitajima Tsuguo
• Ishihara Yasumasa

Classifications

• H10P50/283

  by chemical means · CPC title

• H01J37/32532

  Electrodes · CPC title

• B24C11/00

  Selection of abrasive materials {or additives} for abrasive blasts (polishing compositions C09G) · CPC title

• H01J37/32018

  Glow discharge · CPC title

• C23C4/134

  Plasma spraying · CPC title