Semiconductor module

Patent metadata

Field	Value
Publication number	US-10079193-B2
Application number	US-201715453123-A
Country	US
Kind code	B2
Filing date	Mar 8, 2017
Priority date	Mar 8, 2016
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

A semiconductor module comprises a semiconductor device; a substrate, on which the semiconductor device is attached; a molded encasing, into which the semiconductor device and the substrate are molded; at least one power terminal partially molded into the encasing and protruding from the encasing, which power terminal is electrically connected with the semiconductor device; and an encased circuit board at least partially molded into the encasing and protruding over the substrate in an extension direction of the substrate, wherein the encased circuit board comprises at least one receptacle for a pin, the receptacle being electrically connected via the encased circuit board with a control input of the semiconductor device.

First claim

The invention claimed is:

1. A semiconductor module, comprising:
a semiconductor device;
a substrate, on which the semiconductor device is attached;
a molded encasing, into which the semiconductor device and the substrate are molded;
at least one power terminal partially molded into the encasing and protruding from the encasing, which power terminal is electrically connected with the semiconductor device;
an encased circuit board at least partially molded into the encasing and protruding over the substrate in an extension direction of the substrate,
wherein the encased circuit board comprises at least one receptacle for a pin, the receptacle being electrically connected via the encased circuit board with a control input of the semiconductor device.

2. The semiconductor module of claim 1 , further comprising:
an external circuit board attached to the encasing, the external circuit board carrying a control circuit for the semiconductor device;
wherein the external circuit board comprises a press-fit pin pressed into the receptacle.

3. The semiconductor module of claim 1 ,
wherein the receptacle is a hole through the circuit board at least partially coated with a metallization layer; and/or
wherein the receptacle is adapted for receiving a press-fit pin; and/or
wherein the receptacle is oriented in a direction orthogonal to a direction in which the substrate is orientated.

4. The semiconductor module according to claim 1 ,
wherein the encasing comprises protrusions, adapted for mounting an external circuit board.

5. The semiconductor module according to claim 1 ,
wherein the protrusions and the at least one receptacle are oriented in the same direction.

6. The semiconductor module according to claim 1 ,
wherein the encased circuit board is a multi-layer circuit board, comprising at least two electrically conducting layers; and/or
wherein the encased circuit board comprises at least two receptacles electrically connected to different electrically conducting layers of the encased circuit board.

7. The semiconductor module according to claim 1 ,
wherein the semiconductor device comprises a semiconductor switch adapted for switching a current through the power terminal and adapted for being controlled by the control input.

8. The semiconductor module according to claim 1 ,
wherein the encasing comprises a mold structure protruding from a main body of the encasing, in which the encased circuit board is mechanically supported; and/or
wherein the encased circuit board is encased in a mold structure protruding from a main body of the encasing, the mold structure comprising holes aligned with the receptacles.

9. The semiconductor module according to claim 1 ,
wherein the substrate is an insulated metal substrate comprising two metallization layers insulated by an electrically isolating layer.

10. The semiconductor module according to claim 1 ,
wherein the semiconductor device is bonded to the substrate.

11. The semiconductor module according to claim 1 ,
wherein the encased circuit board is attached to the substrate.

12. The semiconductor module according to claim 1 ,
wherein the at least one power terminal is attached to the substrate.

13. The semiconductor module according to claim 1 ,
wherein the at least one power terminal and the circuit board protrude from the semiconductor module in a sideward direction, in which the substrate is orientated; and/or
wherein the substrate, the encased circuit board and/or the at least one power terminal are orientated in the same direction.

14. The semiconductor module according to claim 1 ,
wherein the encased circuit board is connected with at least one wire bond molded into the encasing; and/or
wherein the at least one wire bond is connected to the semiconductor device and/or to a metallization layer of the substrate.

15. The semiconductor module according to claim 1 , further comprising:
a baseplate in thermal contact with the semiconductor device, partially molded into the encasing and protruding from the encasing, and/or
wherein the baseplate is bonded to the substrate.

16. The semiconductor module of claim 2 , wherein the receptacle is a hole through the circuit board at least partially coated with a metallization layer; and/or
wherein the receptacle is adapted for receiving a press-fit pin; and/or
wherein the receptacle is oriented in a direction orthogonal to a direction in which the substrate is orientated.

17. The semiconductor module according to claim 16 ,
wherein the encasing comprises protrusions, adapted for mounting an external circuit board;
wherein the protrusions and the at least one receptacle are oriented in the same direction; and
wherein the encased circuit board is a multi-layer circuit board, comprising at least two electrically conducting layers; and/or
wherein the encased circuit board comprises at least two receptacles electrically connected to different electrically conducting layers of the encased circuit board.

18. The semiconductor module according to claim 1 , wherein the substrate is an insulated metal substrate comprising two metallization layers insulated by an electrically isolating layer;
wherein the semiconductor device is bonded to the substrate;
wherein the encased circuit board is attached to the substrate; and
wherein the at least one power terminal is attached to the substrate.

19. The semiconductor module according to claim 17 , wherein the substrate is an insulated metal substrate comprising two metallization layers insulated by an electrically isolating layer;
wherein the semiconductor device is bonded to the substrate;
wherein the encased circuit board is attached to the substrate;
wherein the at least one power terminal is attached to the substrate; and
wherein the encased circuit board is connected with at least one wire bond molded into the encasing; and/or
wherein the at least one wire bond is connected to the semiconductor device and/or to a metallization layer of the substrate.

20. The semiconductor module according to claim 2 ,
wherein the encased circuit board is a multi-layer circuit board, comprising at least two electrically conducting layers; and/or
wherein the encased circuit board comprises at least two receptacles electrically connected to different electrically conducting layers of the encased circuit board;
wherein the semiconductor device comprises a semiconductor switch adapted for switching a current through the power terminal and adapted for being controlled by the control input; and
a baseplate in thermal contact with the semiconductor device, partially molded into the encasing and protruding from the encasing, and/or
wherein the baseplate is bonded to the substrate.

Assignees

• Abb Schweiz Ag
• Audi Ag

Inventors

• Mohn Fabian
• Schuderer Jürgen

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title