Method for depositing a copper seed layer onto a barrier layer and copper plating bath

Patent metadata

Field	Value
Publication number	US-10077498-B2
Application number	US-201414906370-A
Country	US
Kind code	B2
Filing date	Sep 11, 2014
Priority date	Sep 25, 2013
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

The present invention relates to a method for providing a copper seed layer on top of a barrier layer wherein said seed layer is deposited onto said barrier layer from an aqueous electroless copper plating bath comprising a water-soluble source for Cu(II) ions, a reducing agent for Cu(II) ions, at least one complexing agent for Cu(II) ions and at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof. The resulting copper seed layer has a homogeneous thickness distribution and a smooth outer surface which are both desired properties.

First claim

The invention claimed is:

1. A method for providing a copper seed layer on top of a barrier layer comprising, in this order, the steps of
(i) providing a substrate comprising at least on a portion of the outer surface a barrier layer selected from the group consisting of cobalt, nickel, ruthenium, tungsten, tantalum, titanium, iridium, rhodium and alloys of the aforementioned,
(ii) contacting said substrate with an aqueous electroless copper plating bath, being substantially free of Na + , K + and tetraalkylammonium ions, which comprises
a. a water-soluble source for Cu(II) ions,
b. a reducing agent for Cu(II) ions selected from the group consisting of formaldehyde, glyoxylic acid, and mixtures thereof,
c. at least one complexing agent for Cu(II) ions and
d. at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof.

2. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the substrate material is selected from the group consisting of silicon, a low-κ-dielectric material on a silicon substrate and glass.

3. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the barrier layer is selected from the group consisting of cobalt, nickel, ruthenium and alloys of the aforementioned.

4. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the reducing agent in the electroless copper plating bath utilized in step (ii) is glyoxylic acid.

5. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the complexing agent for Cu(II) ions in the electroless copper plating bath utilized in step (ii) is selected from the group consisting of carboxylic acids, hydroxycarboxylic acids, aminocarboxylic acids, alkanolamines, polyols and mixtures thereof.

6. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the electroless copper plating bath utilized in step (ii) further comprises a wetting-agent selected from cationic wetting agents, anionic wetting agents, non-ionic wetting agents, amphoteric wetting agents and mixtures thereof.

7. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the electroless copper plating bath utilized in step (ii) further comprises a wetting agent selected from the group consisting of polyethyleneglycol, polypropyleneglycol, polyethyleneglycol-polypropyleneglycol co-polymers, alcohol alkoxylates, alkoxylated fatty acid and mixtures thereof.

8. The method for providing a copper seed layer on top of a barrier layer according to claim 6 wherein the concentration of the wetting agent in the electroless copper plating bath utilized in step (ii) ranges from 0.1 to 100 g/l.

9. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the barrier layer is ruthenium and the means for reducing surface oxides prior to step (ii) is selected from the group consisting of treatment with a N 2 /H 2 plasma and treatment with a reducing agent provided in a solvent.

10. The method for providing a copper seed layer on top of a barrier layer according to claim 9 wherein the reducing agent provided in a solvent is selected from the group consisting of in situ generation of nascent hydrogen by applying a cathodic electrical voltage to the solvent, glyoxylic acid, formaldehyde, hypophosphite, hydrazine, dimethylamino borane, trimethylamino borane, N-methylmorpholino borane and sodium borohydride.

11. The method for providing a copper seed layer on top of a barrier layer according to claim 9 wherein the solvent is selected from the group consisting of water, alcohols, glycol ethers and mixtures thereof.

12. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein oxygen gas is directed through the electrolyte before copper plating and an inert gas is directed through the electroless plating bath during step (ii).

13. The method for providing a copper seed layer on top of a barrier layer according to claim 10 wherein the solvent is selected from the group consisting of water, alcohols, glycol ethers and mixtures thereof.

14. The method for providing a copper seed layer on top of a barrier layer according to claim 1 further comprising one or more additional step to produce an electronic device comprising the substrate, the barrier layer and the copper seed layer.

15. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the source for hydroxide ions is CsOH.

16. A method for providing a copper seed layer on top of a barrier layer comprising, in this order, the steps of
(i) providing a substrate comprising at least on a portion of the outer surface a barrier layer selected from the group consisting of cobalt, nickel, ruthenium, and alloys of the aforementioned,
(ii) contacting said substrate with an aqueous electroless copper plating bath, being substantially free of Na+, K+, and tetraalkylammonium ions, which comprises
a. a water-soluble source for Cu(II) ions,
b. glyoxylic acid as reducing agent for Cu(II) ions,
c. at least one complexing agent for Cu(II) ions, and
d. CsOH as source for hydroxide ions.

17. A method for providing a copper seed layer on top of a barrier layer comprising, in this order, the steps of
(i) providing a substrate comprising at least on a portion of the outer surface a barrier layer selected from the group consisting of cobalt, ruthenium, and alloys of the aforementioned,
(ii) contacting said substrate with an aqueous electroless copper plating bath, being substantially free of Na+, K+, and tetraalkylammonium ions, which comprises
a. a water-soluble source for Cu(II) ions,
b. a reducing agent for Cu(II) ions selected from the group consisting of formaldehyde, glyoxylic acid, and mixtures thereof,
c. at least one complexing agent for Cu(II) ions and
d. at least one source for hydroxide ions selected from the group consisting of RbOH, CsOH and mixtures thereof.

18. The method for providing a copper seed layer on top of a barrier layer according to claim 17 wherein the reducing agent in the electroless copper plating bath utilized in step (ii) is glyoxylic acid.

19. The method for providing a copper seed layer on top of a barrier layer according to claim 17 wherein the at least one source for hydroxide ions is CsOH.

20. The method for providing a copper seed layer on top of a barrier layer according to claim 17 wherein the complexing agent for Cu(II) ions in the electroless copper plating bath utilized in step (ii) is selected from the group consisting of carboxylic acids, hydroxycarboxylic acids, aminocarboxylic acids, alkanolamines, polyols and mixtures thereof.

21. The method for providing a copper seed layer on top of a barrier layer according to claim 1 wherein the barrier layer is selected from the group consisting of cobalt, nickel, ruthenium, and alloys of the aforementioned, and wherein the reducing agent in the electroless copper plating bath utilized in step (ii) is glyoxylic acid.

22. The method according to claim 1 , wherein the barrier layer is disposed in a recess in the substrate, and step (ii) is carried out for a time sufficient to fill the recess with copper.

23. The method according to claim 16 , wherein the barrier layer is disposed in a recess in t

Assignees

• Atotech Deutschland Gmbh

Inventors

• Dammasch Matthias
• Haryono Marco
• Karasahin Sengül
• Schreier Hans-Jürgen

Classifications

• H10P14/46

  using a liquid · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/043

  for electroplating · CPC title

• C23C18/1653

  Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating · CPC title

• C23C18/40 Primary

  using reducing agents · CPC title