Semiconductor light emitting device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10074773-B2
Application number	US-201715671275-A
Country	US
Kind code	B2
Filing date	Aug 8, 2017
Priority date	Jan 10, 2017
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated;
an insulating layer disposed on the light emitting structure, the insulating layer including a first opening and a second opening;
an electrode layer disposed on the insulating layer, the electrode layer including a first electrode and a second electrode; and
an adhesive layer disposed between the electrode layer and the insulating layer, wherein the adhesive layer includes a first opening and a second opening,
wherein the first opening of the adhesive layer overlaps the first opening of the insulating layer, and a width of the first opening of the adhesive layer is equal to or larger than a width of the first opening of the insulating layer, and
wherein the second opening of the adhesive layer overlaps the second opening of the insulating layer, and a width of the second opening of the adhesive layer is equal to or larger than a width of the second opening of the insulating layer.

2. The semiconductor light emitting device of claim 1 , wherein a first electrode is disposed in the first opening of the adhesive layer and in the first opening of the insulating layer, and an entire surface of the first opening of the insulating layer is in contact with the first electrode, and
wherein a second electrode is disposed in the second opening of the adhesive layer and in the second opening of the insulating layer, and an entire surface of the second opening of the insulating layer is in contact with the second electrode.

3. The semiconductor light emitting device of claim 1 , wherein a surface of the first opening of the insulating layer is not in contact with the adhesive layer, and a surface of the second opening of the insulating layer is not in contact with the adhesive layer.

4. The semiconductor light emitting device of claim 1 , further comprising a conductive layer disposed between the second conductive semiconductor layer and the insulating layer.

5. The semiconductor light emitting device of claim 4 , further comprising a capping layer disposed between the conductive layer and the insulating layer,
wherein the capping layer includes an opening, and
wherein the opening of the capping layer overlaps the second opening of the insulating layer and the second opening of the adhesive layer.

6. The semiconductor light emitting device of claim 5 , wherein the first electrode is in contact with the first conductive semiconductor layer through the first opening of the adhesive layer and the first opening of the insulating layer, and
wherein the second electrode is in contact with the conductive layer through the first opening of the adhesive layer, the first opening of the insulating layer, and the opening of the capping layer.

7. The semiconductor light emitting device of claim 1 , wherein the adhesive layer includes an insulating material.

8. The semiconductor light emitting device of claim 7 , wherein a thickness of the adhesive layer is about 1 Å to about 1,000 Å.

9. The semiconductor light emitting device of claim 7 , wherein the adhesive layer includes an insulating material having a lower refractive index than a refractive index of the insulating layer.

10. A method of manufacturing a semiconductor light emitting device, comprising:
forming a light emitting structure by sequentially laminating a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;
etching a part of the light emitting structure such that the first conductive semiconductor layer is exposed;
forming an insulating layer on the light emitting structure;
forming an adhesive layer on the insulating layer;
forming a first opening in the insulating layer, a second opening in the insulating layer, a first opening in the adhesive layer and a second opening in the adhesive layer by simultaneously etching the insulating layer and the adhesive layer; and
forming an electrode layer on the adhesive layer, the electrode layer including a first electrode and a second electrode.

11. The method of claim 10 , wherein the first opening of the adhesive layer overlaps the first opening of the insulating layer, and a width of the first opening of the adhesive layer is equal to or larger than a width of the first opening of the insulating layer, and
wherein the second opening of the adhesive layer overlaps the second opening of the insulating layer, and a width of the second opening of the adhesive layer is equal to or larger than a width of the second opening of the insulating layer.

12. The method of claim 10 , wherein a first electrode is formed in the first opening of the adhesive layer and in the first opening of the insulating layer, and an entire surface of the first opening of the insulating layer is in contact with the first electrode, and
wherein a second electrode is disposed in the second opening of the adhesive layer and in the second opening of the insulating layer, and an entire surface of the second opening of the insulating layer is in contact with the second electrode.

13. The method of claim 10 , further comprising:
forming a conductive layer on the second conductive semiconductor layer; and
forming a capping layer on the conductive layer,
wherein the forming of the conductive layer and the capping layer occurs after the etching of the part of the light emitting structure and the forming of the insulating layer.

14. The method of claim 13 , wherein the the forming of the first opening in the insulating layer, the second opening in the insulating layer, the first opening in the adhesive layer and the second opening in the adhesive layer further includes forming an opening of the capping layer simultaneously with the forming of the first opening in the insulating layer, the second opening in the insulating layer, the first opening in the adhesive layer and the second opening in the adhesive layer, and
wherein the opening of the capping layer overlaps the second opening of the insulating layer and the second opening of the adhesive layer.

15. The method of claim 14 , wherein the first electrode is in contact with the first conductive semiconductor layer through the first opening of the adhesive layer and the first opening of the insulating layer, and
wherein the second electrode is in contact with the conductive layer through the second opening of the adhesive layer, the second opening of the insulating layer, and the opening of the capping layer.

16. A semiconductor light emitting device, comprising:
a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other;
an electrode layer disposed on the second conductive semiconductor layer, the electrode layer including a first electrode and a second electrode, wherein the first and second electrodes are spaced apart from each other;
an insulating layer disposed between the second conductive semiconductor layer and the electrode layer, wherein the insulating layer includes a first opening and a second opening; and
an adhesive layer disposed between the electrode layer and the insulating layer, wherein the adhesive layer includes a first opening and a second opening,
wherein the first opening of the adhesive layer overlaps the first opening of the insulating layer,
wherein the second opening of the adhesive layer overlaps the second opening of the insulating layer, and
wherein the second insulating layer has a refractive

Assignees

• Samsung Electronics Co Ltd

Inventors

• Sim Jae In
• Yoon Ju Heon
• Kim Gi Bum
• Lee Ji Hye

Classifications

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W72/252

  comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/90

  Bond pads, in general · CPC title

• H10W72/019

  of bond pads · CPC title