MOS device with island region

Patent metadata

Field	Value
Publication number	US-10074742-B2
Application number	US-201514961582-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Feb 11, 2005
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A semiconductor device formed on a semiconductor substrate, comprising: an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; an active region; and an island region under the contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer. The active region comprises: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body; and an active region contact electrode disposed within the active region contact trench.

First claim

What is claimed is:

1. A semiconductor device formed on a semiconductor substrate, comprising:
an epitaxial layer overlaying the semiconductor substrate;
a drain formed on back of the semiconductor substrate;
a drain region that extends into the epitaxial layer;
an active region comprising:
a body disposed in the epitaxial layer;
a source embedded in the body;
a first gate trench extending into the epitaxial layer;
a gate disposed in the first gate trench;
an active…

Assignees

• Alpha & Omega Semiconductor

Inventors

• Bhalla Anup
• Wang Xiaobin
• Pan Ji
• Wei Sung-Po

Classifications

• H10P30/222

  Electricity · mapped topic

• H10P30/204

  Electricity · mapped topic

• H10P30/21

  Electricity · mapped topic

• H01L29/66143

  Electricity · mapped topic

• H01L21/26586

  Electricity · mapped topic