Low resistivity wrap-around contacts

Patent metadata

Field	Value
Publication number	US-10074727-B2
Application number	US-201615280226-A
Country	US
Kind code	B2
Filing date	Sep 29, 2016
Priority date	Sep 29, 2016
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

Low resistivity, wrap-around contact structures are provided in nanosheet devices, vertical FETs, and FinFETs. Such contact structures are obtained by delivering dopants to source/drain regions using a highly conformal, doped metal layer. The conformal, doped metal layer may be formed by ALD or CVD using a titanium tetraiodide precursor. Dopants within the conformal, doped metal layer are delivered during the formation of wrap-around metal silicide or metal germano-silicide regions. Dopant segregation at silicide/silicon interfaces or germano-silicide/silicon interfaces reduces contact resistance in the wrap-around contact structures. A contact metal layer electrically communicates with the wrap-around contact structures.

First claim

What is claimed is:

1. A fabrication method comprising:
obtaining a structure including a plurality of field-effect transistors, each field-effect transistor including faceted silicon or silicon germanium source/drain regions;
depositing a conformal metal layer containing dopant atoms on the structure;
annealing the structure, thereby forming metal silicide or metal germano-silicide wrap-around contact layers and causing diffusion of the dopant atoms from the conformal metal layer into interface regions between the wrap-around contact layers and the faceted source/drain regions;
depositing a barrier layer on the structure, and
depositing a metal contact layer on the structure and over the barrier layer such that the metal contact layer is in electrical communication with the wrap-around contact layers.

2. The method of claim 1 , wherein the structure further includes a germanium layer covering the source/drain regions, further including selectively removing the germanium layer to expose the source/drain regions prior to depositing the conformal metal layer.

3. The method of claim 1 , wherein the conformal metal layer consists essentially of titanium.

4. The method of claim 3 , wherein depositing the conformal metal layer includes:
introducing titanium tetraiodide and a precursor gas including the dopant atoms into a process chamber, and
forming the conformal metal layer using chemical vapor deposition or atomic layer deposition.

5. The method of claim 4 , wherein the precursor gas consists essentially of diborane, phosphane or arsine.

6. The method of claim 3 , further including:
selectively removing an unreacted portion of the conformal metal layer following the forming of the metal silicide or metal germano-silicide wrap-around contact layers, and
wherein causing diffusion of the dopant atoms further includes diffusing the dopant atoms uniformly and conformally in the interface regions.

7. The method of claim 3 , wherein each of the field-effect transistors includes a stack of nanosheet channel layers, the source/drain regions extending from the channel layers.

8. The method of claim 3 , wherein depositing the conformal metal layer further includes:
depositing a first conformal titanium sublayer on the structure having a first doping concentration, and
depositing a second conformal titanium sublayer having a second doping concentration on the first conformal titanium sublayer, the first doping concentration being different from the second doping concentration.

9. The method of claim 3 , wherein depositing the conformal metal layer further includes:
depositing a first conformal titanium sublayer having a first doping concentration, and
depositing an undoped second conformal titanium sublayer on the first conformal titanium layer, the first and second conformal titanium sublayers being deposited by:
introducing titanium tetraiodide and a precursor gas including the dopant atoms into a process chamber, and
forming the first and second conformal titanium layers using chemical vapor deposition or atomic layer deposition.

10. The method of claim 3 , wherein the field-effect transistors include gate-all-around structures.

11. The method of claim 3 , wherein the field-effect transistors include tri-gate FinFETs.

12. The method of claim 1 , wherein the field-effect transistors include vertical transport devices and the conformal metal layer consists essentially of titanium formed by:
introducing titanium tetraiodide and a precursor gas including the dopant atoms into a process chamber, and
forming the conformal metal layer using chemical vapor deposition or atomic layer deposition.

Assignees

• IBM

Inventors

• Adusumilli Praneet
• Carr Adra V
• Reznicek Alexander
• Van Der Straten Oscar

Classifications

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/43

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title