X-ray sensor, x-ray detector system and x-ray imaging system

Patent metadata

Field	Value
Publication number	US-10074685-B1
Application number	US-201715597925-A
Country	US
Kind code	B1
Filing date	May 17, 2017
Priority date	May 17, 2017
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

Disclosed is an x-ray sensor having an active detector region including a plurality of detector diodes at a first side of the sensor, and with placement of the junction termination at a second opposite side of the sensor. Normally, this implies that the junction termination is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.

First claim

The invention claimed is:

1. An x-ray sensor ( 21 ) having an active detector region including a plurality of detector diodes ( 22 ) at a first side of the sensor with placement of junction termination ( 23 ) at a second opposite side of the sensor,
wherein the first side corresponds to an anode side of the sensor and the second side with the junction termination corresponds to a cathode side of the sensor, and
wherein the x-ray sensor ( 21 ) has a cathode region and the junction termination ( 23 ) includes a first terminating structure in the vicinity of the cathode region being of the same doping type as the cathode region.

2. The x-ray sensor of claim 1 , wherein the junction termination ( 23 ) includes a second terminating structure of the opposite doping type in the vicinity of the sensor edge.

3. The-x-ray sensor of claim 2 , wherein the cathode region is n+, and the first terminating structure in the vicinity of the cathode region is n-type and the second terminating structure of the opposite doping type in the vicinity of the sensor edge is p-type.

4. The x-ray sensor of claim 3 , wherein the first terminating structure is a n-type Junction Termination Extension, JTE, and wherein the second terminating structure is p-type a Junction Termination Extension, JTE, and/or at least one p-type floating ring equipped with field plate termination.

5. The x-ray sensor of claim 3 , wherein a region ( 24 ) of the sensor extending along the side from the first side of the sensor ( 21 ) to the second opposite side of the sensor ( 21 ) and extending around the periphery of the active detector area is p-type doped.

6. The x-ray sensor of claim 1 , wherein a region ( 24 ) of the sensor extending along the side from the first side of the sensor ( 21 ) to the second opposite side of the sensor ( 21 ) and extending around the periphery of the active detector area is doped to provide a p-n junction isolation from the side edge surface of the sensor.

7. The x-ray sensor of claim 6 , wherein the doped region ( 24 ) is provided with a guard electrode at the first side of the sensor ( 21 ) to provide a guard structure.

8. The x-ray sensor of claim 1 , wherein the junction termination includes a Junction Termination Extension, JTE, and/or one or more Floating Field Rings, FFR.

9. The x-ray sensor of claim 1 , wherein the active detector area includes an array of detector diodes ( 21 ) and the junction termination is configured for terminating the array of detector diodes.

10. An x-ray sensor ( 21 ) having an active detector region including a plurality of detector diodes ( 22 ) at a first side of the sensor with placement of junction termination ( 23 ) at a second opposite side of the sensor,
wherein the first side corresponds to a cathode side of the sensor and the second side with the junction termination corresponds to an anode side of the sensor, and
wherein the x-ray sensor ( 21 ) has an anode region and the junction termination ( 23 ) includes a first terminating structure in the vicinity of the anode region being of the same doping type as the anode region.

11. The x-ray sensor of claim 10 , wherein the junction termination ( 23 ) includes a second terminating structure of the opposite doping type in the vicinity of the sensor edge.

12. The-x-ray sensor of claim 11 , wherein the anode region is p+, and the first terminating structure in the vicinity of the anode region is p-type and the second terminating structure of the opposite doping type in the vicinity of the sensor edge is n-type.

13. The x-ray sensor of claim 12 , wherein the first terminating structure is a p-type Junction Termination Extension, JTE, and wherein the second terminating structure is n-type a Junction Termination Extension, JTE, and/or at least one n-type floating ring equipped with field plate termination.

14. The x-ray sensor of claim 12 , wherein a region ( 24 ) of the sensor extending along the side from the first side of the sensor ( 21 ) to the second opposite side of the sensor ( 21 ) and extending around the periphery of the active detector area is n-type doped.

15. An x-ray detector system ( 20 ) comprising an x-ray sensor ( 21 ) of claim 1 .

16. An x-ray imaging system ( 100 ) comprising an x-ray detector system ( 20 ) of claim 15 .

Assignees

• Prismatic Sensors Ab

Inventors

• Bakowski Holtryd Mietek
• Danielsson Mats
• Xu Cheng

Classifications

• H01L27/14658

  Electricity · mapped topic

• H01L27/1463 Primary

  Electricity · mapped topic

• H01L27/1462

  Electricity · mapped topic

• H10F39/189

  X-ray, gamma-ray or corpuscular radiation imagers · CPC title

• H10F39/805

  Coatings · CPC title