Substrate correction device, substrate lamination device, substrate processing system, substrate correction method, substrate processing method, and semiconductor device manufacturing method
US-2024404859-A1 · Dec 5, 2024 · US
US10074555B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10074555-B2 |
| Application number | US-201313786189-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 5, 2013 |
| Priority date | Feb 11, 2009 |
| Publication date | Sep 11, 2018 |
| Grant date | Sep 11, 2018 |
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Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports.
Opening claim text (preview).
What is claimed is: 1. An apparatus for processing a substrate, comprising: a chamber body defining a processing volume; a first quartz window formed through the chamber body, wherein the first quartz window is configured such that a first external source can transmit radiant energy through the quartz window to the processing volume; a susceptor having a substrate receiving surface configured to support a substrate; and one or more ports configured to float and rotate the susceptor by directing a flow of fluid towards a backside of the susceptor. 2. The apparatus of claim 1 , wherein the one or more ports comprises: one or more supporting ports, each configured to direct a flow of fluid to raise or lower the susceptor; and one or more rotating ports, each configured to direct a flow of fluid to rotate the susceptor. 3. The apparatus of claim 2 , further comprising a susceptor positioning system configured to retain the susceptor within a zone while the susceptor is rotating. 4. The apparatus of claim 3 , wherein the one or more ports are formed through the first quartz window. 5. The apparatus of claim 3 , further comprising a supporting assembly disposed in the processing volume, wherein the supporting assembly is configured to support and rotate the susceptor, and the one or more ports are formed in the supporting assembly. 6. The apparatus of claim 5 , further comprising a support lifting assembly configured to raise or lower the supporting assembly. 7. The apparatus of claim 3 , further comprising three or more substrate supporting pins configured to receive a substrate and to transfer a substrate to the susceptor. 8. The apparatus of claim 7 , wherein the susceptor has three or more openings formed through, and the three or more openings are configured to allow relative motion between the three or more substrate supporting pins and the susceptor. 9. The apparatus of claim 8 , wherein each of the three or more opening is formed on a bottom surface a recess formed in the substrate receiving surface of the susceptor, and the bottom surface of the recess is configured to support a head of one substrate supporting pin when the substrate rests on the substrate receiving surface. 10. The apparatus of claim 3 , wherein the chamber body has a slit valve formed through a sidewall, the slit valve is configured to allow passage of a substrate and enable the susceptor in a receiving position to receive the substrate, and the apparatus further comprising a lifting mechanism configured to move the susceptor between the receiving position and a processing position in an elevation away from the silt valve. 11. The apparatus of claim 2 , further comprising a second quartz window formed on the chamber body, wherein the substrate receiving surface of the susceptor faces the second quartz window and the backside of the susceptor faces the first quartz window, and the second quartz window is configured to transmit energy from a second external heat source to the processing volume. 12. An apparatus for processing a substrate, comprising: a chamber body defining a processing volume; a first quartz window formed through the chamber body, wherein a first external source can transmit radiant energy through the quartz window to the processing volume; a susceptor having a substrate receiving surface to support a substrate; and one or more ports to float and rotate the susceptor by directing a flow of fluid towards a backside of the susceptor. 13. The apparatus of claim 12 , further comprising one or more substrate supporting pins, wherein the substrate supporting pins extend through the susceptor.
characterised by the mechanical construction of the susceptor, stage or support · CPC title
using vacuum or suction, e.g. Bernoulli chucks · CPC title
characterised by lifting arrangements, e.g. lift pins · CPC title
Means for moving the material to be treated · CPC title
the substrate being rotated · CPC title
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