Method for manufacturing electron source

Patent metadata

Field	Value
Publication number	US-10074506-B2
Application number	US-201214434824-A
Country	US
Kind code	B2
Filing date	Oct 12, 2012
Priority date	Oct 12, 2012
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A conventional method to process a tip fails to designate the dimension of the shape of the end of the tip, and so fails to obtain a tip having any desired diameter. Impurities may be attached to the tip. Based on a correlation between the voltage applied or the time during processing of the end of the tip and the diameter of the tip end, the applied voltage is controlled so as to obtain a desired diameter of the tip end for processing of the tip. This allows a sharpened tip made of a tungsten monocrystal thin wire to be manufactured to have any desired diameter in the range of 0.1 μm or more and 2.0 μm or less.

First claim

The invention claimed is:

1. A method for manufacturing an electron source including: a tip prepared by sharpening an end of a thin wire like a needle; and a heating element to heat the tip, comprising:
disposing the tip and the heating element in a vacuum vessel;
heating the heating element by applying current to the heating element;
applying voltage between the tip and an electrode disposed opposed to the tip and adjusting the voltage based on a relationship acquired beforehand between a diameter of the end and the voltage to process the end of the tip to have a desired size; and
monitoring a variation over time of an amount of emission current from the tip during processing of the tip, and ending the processing of the tip when the emission current becomes constant.

2. The method for manufacturing an electron source according to claim 1 , wherein the voltage is adjusted based on a relationship of a first-order linear function between the voltage and a size of the end of the tip after processing so as to process the end of the tip to have a desired size.

3. The method for manufacturing an electron source according to claim 1 , wherein the tip is processed so that the diameter of the end is in a range of 0.1 μm or more and 2.0 μm or less.

4. The method for manufacturing an electron source according to claim 1 , wherein the tip includes tungsten monocrystal or tungsten polycrystal whose axial orientation is <100>.

5. The method for manufacturing an electron source according to claim 1 , wherein
pressure in the vacuum vessel is 10 −4 Pa or more to sharpen the tip.

6. The method for manufacturing an electron source according to claim 1 , wherein the tip during processing is heated in a temperature range from 1,500 K to 2,000 K.

7. The method for manufacturing an electron source according to claim 1 , wherein processing time of the tip is determined based on current emitted from the tip.

8. The method for manufacturing an electron source according to claim 1 , wherein processing is performed so that the end of the tip has a conical part having an angle of 10° or less.

9. The method for manufacturing an electron source according to claim 1 , wherein after processing of the end of the tip, the tip is heat-treated in a range from 2,000 K to 2,500 K.

10. The method for manufacturing an electron source according to claim 9 , wherein the end of the tip is adjusted in size by changing time of the heat treatment.

11. A method for manufacturing an electron source including: a tip prepared by sharpening an end of a thin wire like a needle; and a heating element to heat the tip, comprising:
disposing the tip and the heating element in a vacuum vessel;
heating the heating element by applying current to the heating element;
applying voltage between the tip and an electrode disposed opposed to the tip and adjusting time to apply the voltage based on a relationship acquired beforehand between a diameter of the end and the time to apply the voltage to process the end of the tip to have a desired size; and
monitoring a variation over time of an amount of emission current from the tip during processing of the tip, and ending the processing of the tip when the emission current becomes constant.

12. The method for manufacturing an electron source according to claim 11 , wherein the tip is processed so that the diameter of the end is in a range of 0.1 μm or more and 2.0 μm or less.

13. The method for manufacturing an electron source according to claim 11 , wherein the tip includes tungsten monocrystal or tungsten polycrystal whose axial orientation is <100>.

14. The method for manufacturing an electron source according to claim 11 , wherein pressure in the vacuum vessel is 10 −4 Pa or more to sharpen the tip.

15. The method for manufacturing an electron source according to claim 11 , wherein the tip during processing is heated in a temperature range from 1,500 K to 2,000 K.

16. The method for manufacturing an electron source according to claim 11 , wherein processing is performed so that the end of the tip has a conical part having an angle of 10° or less.

17. The method for manufacturing an electron source according to claim 11 , wherein after processing of the end of the tip, the tip is heat-treated in a range from 2,000 K to 2,500 K.

18. The method for manufacturing an electron source according to claim 17 , wherein the end of the tip is adjusted in size by changing time of the heat treatment.

Assignees

• Hitachi High Techonologies Corp
• Hitachi High Tech Corp

Inventors

• Ichimura Takashi
• Nitta Hisao
• Sonobe Nobuyuki
• Cho Boklae
• Murakoshi Hisaya

Classifications

• H01J2237/06341

  Field emission · CPC title

• H01J37/065 Primary

  Construction of guns or parts thereof (H01J37/067 - H01J37/077 take precedence) · CPC title

• H01J2237/063

  Electron sources · CPC title

• H01J1/3044

  Point emitters · CPC title

• H01J37/06

  Electron sources; Electron guns · CPC title