Method of coating of object

Patent metadata

Field	Value
Publication number	US-10072335-B2
Application number	US-201514839664-A
Country	US
Kind code	B2
Filing date	Aug 28, 2015
Priority date	Aug 29, 2014
Publication date	Sep 11, 2018
Grant date	Sep 11, 2018

Abstract

A method of coating a metallic object with a substantially invisible protective coating, wherein the coating comprises a first layer, a second layer, and a third layer, each layer comprising a metal oxide or a nitride. The method comprises placing the object in an atomic layer deposition (ALD) reactor; depositing a first layer comprising a metal oxide or a nitride on a surface of the object by ALD; depositing a second layer comprising a metal oxide or a nitride on the first layer by ALD; and depositing a third layer comprising a metal oxide or a nitride on the second layer by ALD, thereby forming the protective coating on the object.

First claim

The invention claimed is:

1. A method of coating a metallic object with a nearly invisible protective coating, comprising:
placing the metallic object in an atomic layer deposition (ALD) reactor;
depositing a first layer comprising a metal oxide or a nitride on a surface of the metallic object by ALD;
depositing a second layer comprising a metal oxide or a nitride on the first layer by ALD; and
depositing a third layer comprising a metal oxide or a nitride on the second layer by ALD, thereby forming the nearly invisible protective coating on the metallic object,
wherein the nearly invisible protective coating has a Delta E 2000 of 5 or less.

2. The method of claim 1 , wherein depositing the first, second, and third layers each comprises repeatedly pulsing a precursor material and purging the reactor with an inert gas following each pulse.

3. The method of claim 2 ,
wherein depositing the first layer comprises repeatedly pulsing the precursor and purging with the inert gas until the first layer is about 1 to 100 nm thick;
wherein depositing the second layer comprises repeatedly pulsing the precursor and purging with the inert gas until the second layer is about 1 to 100 nm thick; and
wherein depositing the third layer comprises repeatedly pulsing the precursor and purging with the inert gas until the third layer is about 1 to 100 nm thick.

4. The method of claim 2 , wherein precursor material corresponds to a deposited material selected from the group consisting of Al 2 O 3 , FeO, HfO 2 , MgO, SiO 2 , SnO 2 , Ta, Ta 2 O 5 , TiN, TiO 2 , VO 2 , ZnO, and ZrO.

5. The method of claim 2 , wherein the precursor material is selected from the group consisting of trimethylaluminum, diethyl zinc, tetrakis-dimethyl-amido titanium, and 3-aminopropyltriethoxysilane.

6. The method of claim 2 ,
wherein depositing the first layer comprises repeatedly pulsing trimethylaluminum;
wherein depositing the second layer comprises repeatedly pulsing tetrakis-dimethyl-amido titanium or 3-aminopropyltriethoxysilane; and
wherein depositing the third layer comprises repeatedly pulsing diethyl zinc or trimethylaluminum.

7. The method of claim 6 , further comprising depositing a fourth layer on the third layer by ALD by repeatedly pulsing tetrakis-dimethyl-amido or trimethylaluminum.

8. The method of claim 6 ,
wherein depositing the first layer comprises repeatedly pulsing the trimethylaluminum until the first layer is about 20 to 50 nm thick;
wherein depositing the second layer comprises repeatedly pulsing the tetrakis-dimethyl-amido titanium or 3-aminopropyltriethoxysilane until the second layer is about 20 to 50 nm thick; and
wherein depositing the third layer comprises repeatedly pulsing the diethyl zinc or trimethylaluminum until the third layer is about 1 to 10 nm thick.

9. The method of claim 1 , further comprising depositing a gradient layer on the first layer by ALD prior to depositing the second layer, wherein depositing the gradient layer comprising pulsing a precursor used to form the first layer and a precursor used to form the second layer.

10. The method of claim 1 , wherein depositing at least one of the first, second, and third layers further comprise pulsing a precursor corresponding to a dopant selected from the group consisting of Ag, Au, Fe, Ir, Os, Pd, Pt, Rh, Ru, FeO, HfO 2 , MgO, SiO 2 , SnO 2 , Ta, Ta 2 O 5 , TiN, TiO 2 , VO 2 , ZnO, and ZrO.

11. The method of claim 1 , wherein the surface comprises sterling silver.

12. The method of claim 1 , wherein the nearly invisible protective coating has a Delta E 2000 of 4 or less.

13. The method of claim 1 , wherein the nearly invisible protective coating has a Delta E 2000 of 3 or less.

14. The method of claim 1 , wherein the nearly invisible protective coating has a Delta E 2000 of 2 or less.

15. The method of claim 1 , wherein the nearly invisible protective coating has a Delta E 2000 of 1.

16. The method of claim 1 , wherein the first layer comprises Al 2 O 3 .

17. The method of claim 16 , wherein the second layer comprises TiO 2 .

18. The method of claim 16 , wherein the third layer comprises ZnO.

Assignees

• Univ Maryland
• Trustees Of The Walters Art Gallery Inc

Inventors

• Marquardt Amy Elizabeth
• Breitung Eric
• Phaneuf Raymond J
• Gates Glenn
• Weisser Terry

Classifications

• C23C16/407

  of zinc, germanium, cadmium, indium, tin, thallium or bismuth · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/403

  of aluminium, magnesium or beryllium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45555 Primary

  applied in non-semiconductor technology · CPC title