Solid-state imaging device, manufacturing method thereof, and camera with arranged pixel combinations alternatively

Patent metadata

Field	Value
Publication number	US-10068939-B2
Application number	US-201715424650-A
Country	US
Kind code	B2
Filing date	Feb 3, 2017
Priority date	Jul 24, 2009
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A solid-state imaging device includes a semiconductor substrate; and a pixel unit having a plurality of pixels on the semiconductor substrate, wherein the pixel unit includes first pixel groups having two or more pixels and second pixel groups being different from the first pixel groups, wherein a portion of the pixels in the first pixel groups and a portion of the pixels in the second pixel groups share a floating diffusion element.

First claim

What is claimed:

1. An imaging device, comprising:
a pixel array including first, second and third regions, each of the first, second and third regions having four portions arranged to collect light and separated by a first insulating material, wherein the four portions are arranged in a 2×2 matrix, wherein
each of the four portions of the first region and the second region is arranged at a light-transmitting side of a green-light-transmitting filter,
each of the four portions of the third region is arranged at a light-transmitting side of a blue-light-transmitting filter or a red-light-transmitting filter,
the first region is disposed adjacent to the third region in a first direction in a plan view,
the second region is disposed adjacent to the third region in a second direction perpendicular to the first direction in the plan view,
the first region comprises a first transfer transistor,
the second region comprises a second transfer transistor,
the third region comprises a third transfer transistor,
the first transfer transistor is coupled to a floating diffusion, and the third transfer transistor is coupled to the floating diffusion.

2. The imaging device of claim 1 , wherein each of the four portions of the first region has a photodiode formed therein, the photodiode configured to perform photoelectric conversion.

3. The imaging device of claim 1 , wherein the pixel array further includes a second insulating material disposed corresponding to a boundary between the green-light-transmitting filter and the blue-light-transmitting filter in a cross-section view or a boundary between the green-light-transmitting filter and the red-light-transmitting filter in the cross-section view.

4. The imaging device of claim 3 , wherein the first insulating material is formed in a first layer, the second insulating material is formed in a second layer, wherein the second layer is arranged between the first layer and the light-transmitting side of the green-light-transmitting filter and is arranged between the first layer and the light-transmitting side of the blue-light-transmitting filter or the red-light-transmitting filter, and wherein within the second layer of the first region, the second insulating material is not formed adjacent to the first insulating material in the first layer of the first region.

5. The imaging device of claim 4 , wherein the pixel array further includes a third insulating material formed in the first layer and disposed corresponding to the boundary between the green-light-transmitting filter and the blue-light-transmitting filter in the cross-section view or the boundary between the green-light-transmitting filter and the red-light-transmitting filter in the cross-section view.

6. The imaging device of claim 5 , wherein the first insulating material and the third insulating material form a lattice shape in the first layer of the first region in the plan view.

7. The imaging device of claim 3 , wherein the second insulating material is formed in a trapezoidal shape in the cross-section view.

8. The imaging device of claim 3 , wherein the second insulating material is formed around a metal portion in the cross-section view.

9. The imaging device of claim 3 , wherein the second insulating material comprises silicon oxide, silicon carbide, or a combination thereof.

10. The imaging device of claim 3 , wherein the second insulating material is formed in an insulating layer, wherein the insulating layer includes siloxane resin, titanium, tantalum, niobium, tungsten, zirconium, zinc, indium, hafnium, or a combination thereof.

11. The imaging device of claim 1 , further comprising a plurality of on-chip lenses, wherein
each of the plurality of on-chip lenses is disposed corresponding to the four portions in a different one of the first, second and third regions.

12. The imaging device of claim 1 , wherein a first on-chip lens corresponding to the first region, a second on-chip lens corresponding to the second region, and a third on-chip lens corresponding to the third region have a substantially similar diameter.

13. The imaging device of claim 1 , wherein the green-light-transmitting filter comprises a single filter disposed corresponding to the four portions of the first region.

14. The imaging device of claim 1 , wherein the second transfer transistor is coupled to the floating diffusion.

15. The imaging device of claim 1 , wherein
each of the four portions of the third region is arranged at the light-transmitting side of the blue-light-transmitting filter,
the pixel array further includes a fourth region having a portion arranged at the light-transmitting side of the red-light-transmitting filter,
the fourth region is disposed adjacent to the second region in the first direction in the plan view, and
the fourth region is disposed adjacent to the first region in the second direction in the plan view.

16. The imaging device of claim 15 , wherein the fourth region comprises a fourth transfer transistor, wherein the second transfer transistor and the fourth transfer transistor are coupled to the floating diffusion.

17. The imaging device of claim 15 , wherein the blue-light-transmitting filter comprises a single filter disposed corresponding to the third region, and
the red-light-transmitting filter comprises a single filter disposed corresponding to the fourth region.

18. The imaging device of claim 1 , wherein each of the first, second and third regions has only four portions separated by the first insulating material.

19. The imaging device of claim 6 , further comprising a plurality of on-chip lenses, wherein
one of the plurality of on-chip lenses is disposed corresponding to the four portions of the first region, and
the green-light-transmitting filter comprises a single filter disposed corresponding to the four portions of the first region.

20. An imaging device, comprising:
a pixel array including first, second and third regions, each of the first, second and third regions having four portions arranged to collect light and separated by a first insulating material, wherein the four portions are arranged in a 2×2 matrix, wherein
each of the four portions of the first region and the second region is arranged at a light-transmitting side of a green-light-transmitting filter,
each of the four portions of the third region is arranged at a light-transmitting side of a blue-light-transmitting filter or a red-light-transmitting filter,
the first region is disposed adjacent to the third region in a first direction in a plan view,
the second region is disposed adjacent to the third region in a second direction perpendicular to the first direction in the plan view,
the first region comprises a first transfer transistor,
the second region comprises a second transfer transistor,
the third region comprises a third transfer transistor, and
the first transfer transistor and the third transfer transistor are arranged to share a floating diffusion.

21. The imaging device of claim 20 , wherein the pixel array further includes:
a second insulating material disposed corresponding to a boundary between the green-light-transmitting filter and the blue-light-transmitting filter in a cross-section view or a boundary between the green-light-transmitting filter and the red-light-transmitting filter in the cross-section view, and
a third insulating material formed in the first layer and disposed corresponding to the boundary between the green-light-transmitting filter and the bl

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Ishiwata Hiroaki
• Ha Sanghoon

Classifications

• H04N25/76

  Addressed sensors, e.g. MOS or CMOS sensors · CPC title

• H04N25/134

  based on three different wavelength filter elements · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N2209/045

  using mosaic colour filter · CPC title

• H04N5/378

  Electricity · mapped topic