Multi-strike process for bonding packages and the packages thereof

Patent metadata

Field	Value
Publication number	US-10068868-B2
Application number	US-201715433421-A
Country	US
Kind code	B2
Filing date	Feb 15, 2017
Priority date	Dec 30, 2015
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.

First claim

What is claimed is:

1. A package comprising:
a first package component comprising a copper-containing bump;
a second package component comprising an aluminum-containing pad, wherein the copper-containing bump is bonded to the aluminum-containing pad, and wherein the copper-containing bump extends into the aluminum-containing pad; and
an Inter-Metallic Compound (IMC) joining the copper-containing bump to the aluminum-containing pad, wherein the IMC comprises copper and aluminum.

2. The package of claim 1 further comprising:
a plurality of discrete aluminum oxide pieces contacting the IMC; and
a plurality of discrete copper oxide pieces contacting the IMC.

3. The package of claim 2 , wherein one of the plurality of discrete aluminum oxide pieces and the plurality of discrete copper oxide pieces is encircled by the IMC.

4. The package of claim 2 , wherein one of the plurality of discrete aluminum oxide pieces and the plurality of discrete copper oxide pieces has a top surface in contact with an un-oxidized portion of the copper-containing bump, and a lower portion embedded in the IMC.

5. The package of claim 2 , wherein one of the plurality of discrete aluminum oxide pieces and the plurality of discrete copper oxide pieces is fully enclosed in the IMC.

6. The package of claim 1 , wherein the second package component further comprises a passivation layer covering edge portions of the aluminum-containing pad, and the copper-containing bump extends into an opening in the passivation layer.

7. The package of claim 6 further comprising an aluminum oxide layer covering and contacting an un-oxidized portion of the aluminum-containing pad, wherein the aluminum oxide layer comprises a first edge contacting the copper-containing bump, and a second edge co-terminus with an edge of the passivation layer.

8. The package of claim 1 further comprising an underfill between the first package component and the second package component, wherein the underfill encircles the copper-containing bump.

9. The package of claim 1 , wherein the copper-containing bump extends into the aluminum-containing pad by a depth greater than about 0.1 μm.

10. A package comprising:
a first package component comprising a copper-containing bump protruding out of a major surface of the first package component;
a second package component comprising an aluminum-containing pad, wherein the copper-containing bump is bonded to the aluminum-containing pad;
a plurality of discrete aluminum oxide pieces distributed throughout an interface between the copper-containing bump; and
a plurality of discrete copper oxide pieces distributed throughout the interface.

11. The package of claim 10 further comprising:
an Inter-Metallic Compound (IMC) of copper and aluminum at the interface, wherein the plurality of discrete aluminum oxide pieces and the plurality of discrete copper oxide pieces are separated from each other by the IMC.

12. The package of claim 10 , wherein the copper-containing bump extends into the aluminum-containing pad.

13. The package of claim 12 further comprising an aluminum oxide layer at a surface of the aluminum-containing pad, wherein the copper-containing bump penetrates through the aluminum oxide layer.

14. The package of claim 10 , wherein the plurality of discrete aluminum oxide pieces and the plurality of discrete copper oxide pieces have random sizes.

15. A package comprising:
a first package component comprising a copper-containing bump protruding out of a major surface of the first package component; and
a second package component comprising:
an aluminum-containing pad;
a passivation layer covering edge portions of the aluminum-containing pad; and
an aluminum oxide layer over and contacting the aluminum-containing pad, wherein edges of the aluminum oxide layer are substantially aligned to edges of the passivation layer, and the copper-containing bump penetrates through the aluminum oxide layer to bond to the aluminum-containing pad.

16. The package of claim 15 further comprising a plurality of discrete aluminum oxide pieces at an interface between the copper-containing bump and the aluminum-containing pad, wherein the plurality of discrete aluminum oxide pieces is separated from each other by an Inter-Metallic Compound (IMC) of copper and aluminum.

17. The package of claim 16 , wherein the first package component is over the second package component and the plurality of discrete aluminum oxide pieces is below an interface between the aluminum oxide layer and the aluminum-containing pad.

18. The package of claim 15 further comprising a plurality of discrete copper oxide pieces at an interface between the copper-containing bump and the aluminum-containing pad, wherein the plurality of discrete copper oxide pieces is separated from each other by an Inter-Metallic Compound (IMC) of copper and aluminum.

19. The package of claim 15 , wherein the second package component comprises a wafer, and the first package component is a device die.

20. The package of claim 15 , wherein both the first package component and the second package component are device wafers.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Shao Tung-Liang
• Tung Chih-Hang
• Shih Wen-Lin
• Chen Hsiao-Yun
• Yu Chen-Hua

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/953

  not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title