Leadless multi-layered ceramic capacitor stacks

Patent metadata

Field	Value
Publication number	US-10068707-B2
Application number	US-201514925056-A
Country	US
Kind code	B2
Filing date	Oct 28, 2015
Priority date	May 26, 2010
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A stacked MLCC capacitor is provided wherein the capacitor stack comprises multilayered ceramic capacitors wherein each multilayered ceramic capacitor comprises first electrodes and second electrodes in an alternating stack with a dielectric between each first electrode and each adjacent second electrode. The first electrodes terminate at a first side and the second electrodes second side. A first transient liquid phase sintering conductive layer is the first side and in electrical contact with each first electrode; and a second transient liquid phase sintering conductive layer is on the second side and in electrical contact with each second electrode.

First claim

The invention claimed is:

1. A capacitor stack comprising:
multilayered ceramic capacitors wherein each multilayered ceramic capacitor of said multilayered ceramic capacitors comprises:
first electrodes and second electrodes in an alternating stack with a dielectric between each first electrode of said first electrodes and each adjacent second electrode of said second electrodes wherein said first electrodes have a first polarity and terminate at a first side of said multilayered ceramic capacitor and said second electrodes have a second polarity and terminate at a second side of said multilayered ceramic capacitor;
a first transient liquid phase sintering conductive layer on said first side and in electrical contact with each said first electrode; and
a second transient liquid phase sintering conductive layer on said second side and in electrical contact with each said second electrode; and
a first lead in electrical contact with at least one said first transient liquid phase sintering conductive layer.

2. The capacitor stack of claim 1 wherein said first lead is in electrical contact with more than one of said first transient liquid phase sintering conductive layers.

3. The capacitor stack of claim 1 wherein said first lead is in electrical contact with at least one external termination of at least one said multilayer ceramic capacitor through a third transient liquid phase sintering conductive adhesive.

4. The capacitor stack of claim 3 wherein a second lead is in electrical contact with at least one second external termination at least one said multilayered ceramic capacitor through a fourth transient liquid phase sintering adhesive.

5. The capacitor stack of claim 1 wherein said first transient liquid phase sintering conductive layer comprises a surface metal selected from the group consisting of Ag, Au and Cu.

6. The capacitor stack of claim 1 further comprising a conductive layer between said first side and said first transient liquid phase sintering conductive layer.

7. The capacitor stack of claim 6 wherein said first transient liquid phase sintering conductive layer comprises at least one low melting point metal selected from the group consisting of indium, tin, antimony, bismuth, cadmium, zinc, gallium, tellurium, mercury, thallium, selenium, polonium, and lead.

8. The capacitor stack of claim 6 wherein said conductive layer comprises a high temperature metal selected from the group consisting of silver, copper, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum.

9. The capacitor stack of claim 6 wherein said conductive layer comprises nickel plated with an element selected from the group consisting of Ag, Sn, Au and SnPb.

10. The capacitor stack of claim 1 further comprising an external termination comprises metal plated with an element selected from the group consisting of Ag, Sn, Au and SnPb.

11. The capacitor stack of claim 10 wherein said metal comprises nickel.

12. The capacitor stack of claim 1 wherein said first lead frame comprises a surface metal selected from the group consisting of Ag, Au and Cu.

13. The capacitor stack of claim 12 wherein said first transient liquid phase sintering conductive layer comprises copper and tin.

14. The capacitor stack of claim 1 wherein said first transient liquid phase sintering conductive layer comprising a low melting metal where said low melting metal is diffused into said lead frame.

15. The capacitor stack of claim 14 further comprising an external termination between said first side and said first transient liquid phase sintering conductive layer.

16. The capacitor stack of claim 15 wherein said low melting metal is also diffused into said external termination.

17. The capacitor stack of claim 1 wherein said first transient liquid phase sintering conductive layer further comprises a high melting metal.

18. The capacitor stack of claim 1 wherein said first transient sintering conductive layer further comprises a non-metallic filler.

19. The capacitor stack of claim 18 wherein said non-metallic filler is glass frit.

20. The capacitor stack of claim 1 wherein said first lead or a second lead comprises a material selected from the group consisting of phosphor bronze, copper, and ferrous alloys.

21. The capacitor stack of claim 20 wherein said first lead or said second lead comprises a lead frame surface finish selected from the group consisting of Cu, Ag, Sn, Au, Ni, and Pb.

22. The capacitor stack of claim 1 wherein said first lead frame comprises a material selected from the group consisting beryllium copper, Cu194 and Cu192.

23. The capacitor stack of claim 22 wherein said first lead frame comprises a lead frame surface finish selected from the group consisting of Cu, Ag, Sn, Au, Ni, and Pb.

24. The capacitor stack of claim 1 wherein said first lead comprises a material selected from the group consisting of alloys of copper, Alloy 42 and Kovar.

25. The capacitor stack of claim 24 wherein said first lead frame comprises a lead frame surface finish selected from the group consisting of Cu, Ag, Sn, Au, Ni, and Pb.

26. The capacitor stack of claim 1 wherein said first transient liquid phase sintering conductive layer comprises a low melting metal and a high melting metal.

27. The capacitor stack of claim 26 wherein said low melting metal is selected from the group consisting of indium, tin, antimony, bismuth, cadmium, zinc, gallium, tellurium, mercury, thallium, selenium, polonium and lead.

28. The capacitor stack of claim 26 wherein said high melting metal is selected from the group consisting of silver, copper, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum.

29. The capacitor stack of claim 26 wherein said low melting metal is selected from the group consisting of indium, tin or bismuth and said high melting metal is selected from the group consisting of silver, copper or nickel.

30. The capacitor stack of claim 1 further comprising an insulator between adjacent multilayered ceramic capacitors.

31. A capacitor stack comprising:
multilayered ceramic capacitors wherein each multilayered ceramic capacitor of said multilayered ceramic capacitors comprises:
first electrodes and second electrodes in an alternating stack with a dielectric between each first electrode of said first electrodes and each adjacent second electrode of said second electrodes wherein said first electrodes have a first polarity and terminate at a first side of said multilayered ceramic capacitor and said second electrodes have a second polarity and terminate at a second side of said multilayered ceramic capacitor;
a first transient liquid phase sintering conductive layer on said first side and in electrical contact with each said first electrode; and
a second transient liquid phase sintering conductive layer on said second side and in electrical contact with each said second electrode; and
a first lead in electrical contact with at least one said first transient liquid phase sintering conductive layer;
wherein said first transient liquid phase sintering conductive layer comprising a low melting metal where said low melting metal is diffused into said lead frame and wherein said low melting metal is also diffused into said first electrodes.

Assignees

• Kemet Electronics Corp

Inventors

• Mcconnell John E
• Renner Garry L
• Bultitude John
• Hill Allen

Classifications

• H10W72/07336

  Soldering or alloying · CPC title

• B23K35/0227

  Rods or wires (B23K35/0244 takes precedence) · CPC title

• H01G4/38

  Multiple capacitors, i.e. structural combinations of fixed capacitors · CPC title

• B23K35/3613

  Polymers, e.g. resins · CPC title

• B23K2101/42

  Printed circuits · CPC title