Scintillator, method of manufacturing the same, radiation imaging apparatus, and radiation imaging system

Patent metadata

Field	Value
Publication number	US-10067242-B2
Application number	US-201615221857-A
Country	US
Kind code	B2
Filing date	Jul 28, 2016
Priority date	Aug 6, 2015
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A method of manufacturing a scintillator, includes growing a scintillator layer constituted by a plurality of column crystals on a base, forming a first protection film so as to cover the scintillator layer, planarizing the first protection film, the planarizing including a polishing process of polishing the first protection film, and forming a second protection film configured to cover the first protection film that has undergone the planarizing. The scintillator layers grown on the base include an abnormally grown portion. In the polishing process, a front end of the abnormally grown portion is polished as well as a surface of the first protection film so as to form a continuation surface by the surface of the first protection film and a surface of the abnormally grown portion.

First claim

What is claimed is:

1. A method of manufacturing a scintillator, the method comprising:
growing a scintillator layer constituted by a plurality of columnar crystals on a base;
forming a first protection film so as to cover the scintillator layer;
planarizing the first protection film, the planarizing including a polishing process of polishing an entire surface region of the first protection film; and
forming a second protection film configured to cover the first protection film that has undergone the planarizing,
wherein the scintillator layer grown on the base includes an abnormally grown portion, and
in the polishing process, a front end of the abnormally grown portion is polished as well as the entire surface region of the first protection film without specifying a position of the abnormally grown portion.

2. The method according to claim 1 , wherein the scintillator layer grown on the base includes a normally grown portion, and
wherein the polishing process is executed such that the front end of the abnormally grown portion is polished, but the normally grown portion is not polished, and a plane is formed by an exposed surface of the first protection film polished by the polishing process and an exposed surface of the abnormally grown portion polished by the polishing process.

3. The method according to claim 1 , wherein respective front ends of the plurality of columnar crystals are pointed, and in the forming the first protection film, the first protection film is formed such that a structure in which the respective front ends of the plurality of columnar crystals stick into the first protection film is obtained.

4. The method according to claim 1 , further comprising, after the planarizing and before the forming the second protection film, dissolving a part of the abnormally grown portion having a front end polished by the polishing process.

5. The method according to claim 4 , wherein the plurality of columnar crystals are constituted by cesium iodide as a main component and in the dissolving, the part of the abnormally grown portion having the front end polished by the polishing process is dissolved by using one of water and a polar solvent.

6. The method according to claim 1 , wherein the planarizing further includes a removing process of removing chips generated by the polishing process by gas blowing.

7. The method according to claim 1 , wherein a material of the first protection film and a material of the second protection film are the same.

8. The method according to claim 1 , wherein an arithmetic average roughness (Ra) of a surface of the second protection film is smaller than an arithmetic average roughness (Ra) of a surface of the first protection film after the polishing process is performed.

9. The method according to claim 1 , wherein 0.5≤ρ/p c ≤0.8, where ρ(g/cm 3 ) is a density of the scintillator layer and p c (g/cm 3 ) is a density of a material of the scintillator layer in a single crystal state.

10. The method according to claim 1 , wherein the scintillator layer grown on the base includes a normally grown portion, and
wherein the polishing process is executed such that the front end of the abnormally grown portion is polished, but the normally grown portion is not polished, and a region of the first protection film under the surface region of the first protection film remains after the polishing process.

11. The method according to claim 1 , wherein the scintillator layer grown on the base includes a normally grown portion,
wherein the polishing process is executed such that the front end of the abnormally grown portion is polished, but the normally grown portion is not polished, and an exposed surface of the abnormally grown portion is formed, and
wherein the first protection film remains on a region of the scintillator layer other than the abnormally grown portion.

12. A method of manufacturing a scintillator, the method characterized by comprising:
growing a scintillator layer constituted by a plurality of columnar crystals on a base;
forming a first protection film so as to cover the scintillator layer;
polishing an entire surface region of the first protection film without specifying a position of the abnormally grown portion, such that a part of an abnormally grown portion included in the scintillator layer is exposed;
dissolving the part of the abnormally grown portion exposed by the polishing the first protection film;
forming a second protection film configured to cover the first protection film after the dissolving.

13. The method according to claim 12 , wherein the scintillator layer grown on the base includes a normally grown portion, and
wherein the polishing is executed such that the front end of the abnormally grown portion is polished, but the normally grown portion is not polished, and a region of the first protection film under the surface region of the first protection film remains after the polishing.

14. The method according to claim 12 , wherein the scintillator layer grown on the base includes a normally grown portion,
wherein the polishing is executed such that the front end of the abnormally grown portion is polished, but the normally grown portion is not polished, and an exposed surface of the abnormally grown portion is formed, and
wherein the first protection film remains on a region of the scintillator layer other than the abnormally grown portion.

Assignees

• Canon Kk

Inventors

• Ishida Yohei
• Kobayashi Tamaki
• Ichimura Tomoaki

Classifications

• C30B29/12

  Halides · CPC title

• C30B33/00

  After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title

• G01T1/202

  the detector being a crystal · CPC title

• C30B29/605

  Products containing multiple oriented crystallites, e.g. columnar crystallites · CPC title

• G01T1/2023 Primary

  Selection of materials · CPC title