GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10066319-B2
Application number	US-201615210150-A
Country	US
Kind code	B2
Filing date	Jul 14, 2016
Priority date	Jan 17, 2014
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

A disc-like GaN substrate is a substrate produced by a tiling method and having an angel between the normal line and m-axis on the main surface of the substrate of 0 to 20° inclusive and a diameter of 45 to 55 mm, to 4 or less. In a preferred embodiment, a disc-like GaN substrate has a first main surface and a second main surface that is opposite to the first main surface, and which has an angle between the normal line and m-axis on the first main surface of 0 to 20° inclusive and a diameter of 45 mm or more. The disc-like GaN substrate comprises at least four crystalline regions each being exposed to both of the first main surface and the second main surface, wherein the four crystalline regions are arranged in line along the direction of the orthogonal projection of c-axis on the first main surface.

First claim

The invention claimed is:

1. A GaN substrate, comprising:
a first main surface; and
a second main surface provided on an opposite side from the first main surface, wherein
the GaN substrate has a disk-shape with a diameter of 45 mm or more,
an angle between a normal line of the first main surface and an m-axis is 0° to 20°,
the GaN substrate is made up of n (n being 2, 3 or 4) crystal regions each exposed at both the first main surface and second main surface,
the n crystal regions are arrayed in one row in a direction of an orthogonal projection of a c-axis on the first main surface, and
when the first main surface is divided into an outer peripheral portion measuring 3 mm or less from an edge and a central portion surrounded by the outer peripheral portion, and the central portion is divided into a plurality of square partitions each having a 5 mm side, at least one square region, which has a 100 μm side and in which no dark spots are detected in a CL measurement, is observed within each of the partitions.

2. The GaN substrate according to claim 1 , wherein the diameter of the substrate is 55 mm or less.

3. The GaN substrate according to claim 1 , wherein a boundary between two adjacent crystal regions, arbitrarily selected from among the n crystal regions, and the orthogonal projection of the c-axis on the first main surface form an angle in a range of 90°±10° within the first main surface.

4. The GaN substrate according to claim 1 , wherein there are no through-cracks defined in (A) below running through the substrate in the thickness direction, or even if present, the number of the through-cracks defined in (A) below in the first main surface is 10 or fewer per 20 cm 2 , and there are no cracks of a type other than the through-cracks defined in (A) below:
(A) a through-crack forming an angle with the orthogonal projection of the c-axis on the first main surface in the range of 90°±10° within the first main surface.

5. The GaN substrate according to claim 1 , wherein an average dislocation density in the central portion, obtained through averaging, excluding boundaries between mutually adjacent crystal regions, is lower than 10 5 cm −2 .

6. The GaN substrate according to claim 1 , wherein the first main surface is not a concave surface at room temperature.

7. The GaN substrate according to claim 6 , wherein the first main surface is a convex surface at room temperature.

8. The GaN substrate according to claim 6 , wherein a SORI value of the first main surface at room temperature is smaller than 20 μm.

9. The GaN substrate according to claim 1 , wherein when the first main surface is divided into an outer peripheral portion measuring 3 mm or less from the edge and a central portion surrounded by the outer peripheral portion, a variation range of an off-angle in the central portion is smaller than 0.5° both for a component in a direction of the orthogonal projection of the c-axis on the first main surface and for a component in a direction perpendicular to the direction.

10. The GaN substrate according to claim 1 , comprising stacking faults.

11. The GaN substrate according to claim 1 , which comprises a GaN crystal having an alkali metal concentration lower than 1×10 15 cm −3 and an absorption coefficient at 450 nm of 2 cm −1 or smaller.

12. A method for producing a GaN crystal, the method comprising a step of preparing the GaN substrate according to claim 1 , and epitaxially growing GaN thereon.

13. A method for producing a semiconductor device, the method comprising:
preparing the GaN substrate according to claim 1 , and growing thereon one or more types of nitride semiconductor layer.

Assignees

• Mitsubishi Chem Corp

Inventors

• Tsukada Yusuke
• Nagao Satoru
• Kamada Kazunori
• Tashiro Masayuki
• Fujito Kenji
• Fujisawa Hideo
• Mikawa Yutaka
• Kajimoto Tetsuharu
• Fukada Takashi

Classifications

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2908

  Nitrides · CPC title

• H10P14/276

  Lateral overgrowth · CPC title