Laser light source

Patent metadata

Field	Value
Publication number	US-9829778-B2
Application number	US-201514743971-A
Country	US
Kind code	B2
Filing date	Jun 18, 2015
Priority date	May 29, 2009
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

The present invention is directed to a laser light source.

First claim

What is claimed is:

1. A light apparatus, the apparatus comprising:
a housing;
an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising:
an n-cladding layer with a thickness from 100 nm to 5000 nm with Si doping level of 1E17 to 3E18 cm-3;
an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;
multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;
a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3;
a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3; and
a non-polar or semipolar configuration characterizing the gallium and nitrogen containing material;

an optical component coupled to an output laser beam of the edge emitting laser diode device;
a phosphor material coupled to the edge emitting laser device to be excited by a laser beam from the edge emitting laser diode device; and
a substantially white light output from the edge emitting laser diode device.

2. The apparatus of claim 1 wherein the substantially white light output is provided in a projection system.

3. The apparatus of claim 1 wherein the phosphor material is selected from at least one of a red phosphor, a green phosphor, or a blue phosphor.

4. The apparatus of claim 1 further comprising a reflector coupled to an output of the edge emitting laser diode device.

5. The apparatus of claim 1 wherein the edge emitting laser diode device is a plurality of edge emitting laser diode devices.

6. The apparatus of claim 1 further comprising a controller coupled to the light apparatus.

7. The apparatus of claim 1 further comprising a reflector coupled to an output of the edge emitting laser diode device and a controller coupled to the light apparatus.

8. The apparatus of claim 1 wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device.

9. The apparatus of claim 1 further comprising a controller coupled to the light apparatus; and a reflector coupled to an output of the edge emitting laser diode device; and wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device.

10. The apparatus of claim 1 further comprising a controller coupled to the light apparatus; and a reflector coupled to an output of the edge emitting laser diode device; and wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device; and further comprising a projection device coupled to the substantially white light output.

11. A light source apparatus comprising:
a housing;
a plurality of edge emitting laser diode devices disposed on a common gallium and nitrogen containing material, each of the plurality of edge emitting laser diode devices configured to emit a laser beam at a different wavelength, at least one of the plurality of edge emitting laser diode devices comprising:
an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;
an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;
multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;
a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19-3; and
a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3;

an output provided on the plurality of edge emitting laser diode devices to output a laser beam; and
one or more optical members coupled to the output of the plurality of edge emitting laser diode devices, at least one of the one or more optical members comprising a phosphor material, the one or more optical members configured to output a substantially white emission.

12. The apparatus of claim 11 wherein the laser beam is characterized by a blue color.

13. The apparatus of claim 11 further comprising a reflector coupled to the one or more optical members.

14. The apparatus of claim 11 further comprising a controller coupled to the plurality of edge emitting laser diode devices.

15. A light apparatus, the apparatus comprising:
a housing;
an edge emitting laser diode device coupled to the housing, the edge emitting laser diode device comprising a gallium and nitrogen containing material, the edge emitting laser diode device comprising:
an n-cladding layer with a thickness from 100 nm to 5000 nm and a Si doping level of 1E17 to 3E18 cm-3;
an n-side separate confinement heterostructure (SCH) layer comprised of InGaN having a molar fraction of In of between 3% and 10% and a thickness from 20 nm to 100 nm;
multiple quantum well active region layers comprised of at least two InGaN quantum wells each having a thickness from 2 nm to 8.5 nm and separated by GaN barriers having a thickness from 2.5 nm to 8 nm;
a p-cladding layer with a thickness from 400 nm to 1000 nm with Mg doping level of 2E17 to 2E19 cm-3; and
a p++-GaN contact layer with a thickness from 20 nm to 40 nm with Mg doping level of 1E19 to 1E21 cm-3;

an optical component coupled to an output laser beam of the edge emitting laser diode device;
a color wheel having phosphor material, the color wheel coupled to the edge emitting laser diode device, the phosphor material arranged to be excited by a laser beam from the edge emitting laser diode device;
a substantially white light output from the color wheel;
a reflector coupled to an output of the edge emitting laser diode device; and
a controller coupled to the light apparatus;
wherein the optical component comprises a waveguide coupled to the edge emitting laser diode device.

16. The apparatus of claim 15 wherein the gallium and nitrogen containing material is configured from a non-polar, semipolar, or polar configuration characterizing the gallium and nitrogen containing material.

Assignees

• Soraa Laser Diode Inc

Inventors

• Raring James W
• Rudy Paul

Classifications

• H04N13/0497

  Electricity · mapped topic

• H04N5/74

  Projection arrangements for image reproduction, e.g. using eidophor · CPC title

• H04N5/7475

  Constructional details of television projection apparatus · CPC title

• H04N9/31

  Projection devices for colour picture display {, e.g. using electronic spatial light modulators [ESLM]} · CPC title

• H04N2005/745

  Control circuits therefor · CPC title