Method for producing silicon carbide single-crystal ingot and silicon carbide single-crystal ingot

Patent metadata

Field	Value
Publication number	US-10066316-B2
Application number	US-201615551871-A
Country	US
Kind code	B2
Filing date	Feb 18, 2016
Priority date	Feb 18, 2015
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

The present invention provides a method of raising the rate of reduction of the dislocation density accompanying growth of an SiC single crystal to counter the increase in the threading screw dislocations formed near the interface of the seed crystal and grown SiC single crystal and thereby produce an SiC single-crystal ingot with a small threading screw dislocation density from the initial stage of growth. The present invention is a method for producing a silicon carbide single-crystal ingot growing a silicon carbide single crystal on a growth face of a seed crystal consisting of a silicon carbide single crystal by a physical vapor transport method so as to produce a silicon carbide single-crystal ingot, the method for producing a silicon carbide single-crystal ingot comprising forming step bunching with heights of steps of 10 μm to 1 mm and spans of terraces of 200 μm to 1 mm on the growth face of the seed crystal and making the silicon carbide single crystal grow on the growth face of the seed crystal by the physical vapor transport method.

First claim

The invention claimed is:

1. A method for producing a silicon carbide single-crystal ingot growing a silicon carbide single crystal on a growth face of a seed crystal consisting of a silicon carbide single crystal by a physical vapor transport method so as to produce a silicon carbide single-crystal ingot,
the method for producing a silicon carbide single-crystal ingot comprising forming step bunching with heights of steps of 10 μm to 1 mm and spans of terraces of 200 μm to 1 mm on the growth face of the seed crystal and
making the silicon carbide single crystal grow on the growth face of the seed crystal by the physical vapor transport method.

2. The method for producing a silicon carbide single-crystal ingot according to claim 1 further comprising forming the step bunching by growing a thickness 0.1 mm to 3 mm silicon carbide single crystal on a growth face of a seed crystal having an off-angle by a solution growth method.

3. A silicon carbide single crystal ingot comprising a seed crystal of a silicon carbide single crystal having a growth face and a silicon carbide single-crystal region formed on the growth face,
step bunching with heights of steps of 10 μm to 1 mm and spans of terraces of 200 μm to 1 mm being formed at the growth face,
wherein a threading screw dislocation density is 500/cm 2 or less in a crystal region of 60% or more of the height direction of the ingot in the silicon carbide single-crystal region.

Assignees

• Showa Denko Kk

Inventors

• Tani Komomo
• Yano Takayuki
• Fujimoto Tatsuo
• Tsuge Hiroshi
• Kamei Kazuhito
• Kusunoki Kazuhiko
• Seki Kazuaki

Classifications

• C30B23/02 Primary

  Epitaxial-layer growth · CPC title

• C30B23/002

  Controlling or regulating · CPC title

• C30B29/60

  characterised by shape · CPC title

• C30B29/36 Primary

  Carbides · CPC title

• C30B23/025

  characterised by the substrate · CPC title