Composition for chemical mechanical polishing and method for reducing chemical mechanical polishing surface defects

Patent metadata

Field	Value
Publication number	US-10066127-B2
Application number	US-201615210058-A
Country	US
Kind code	B2
Filing date	Jul 14, 2016
Priority date	Jul 14, 2016
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

The present disclosure provides chemical mechanical polishing (CMP) slurry, including an abrasive, a chelator, an oxidizing agent, and a surface modificator. The surface modificator is configured to modify a surface from hydrophobic to hydrophilic. The present disclosure also provides a method for reducing chemical mechanical polishing (CMP) surface defects. The method includes adding an additive into CMP slurry by at least 0.0001 wt %, wherein the additive modifies a surface to be polished from hydrophobic to hydrophilic.

First claim

What is claimed is:

1. A chemical mechanical polishing (CMP) composition, comprising:
a surfactant having one hydrophobic end and one hydrophilic end opposite to the hydrophobic end, wherein the surfactant comprises polyoxyethylene alkylphenyl ether (PAPE), and the surfactant occupies more than 0.01 wt % of the CMP composition.

2. The CMP composition of claim 1 , wherein the surfactant is configured to modify a surface from hydrophobic to hydrophilic.

3. The CMP composition of claim 1 , further comprising:
an abrasive;
a chelator; and
an oxidizing agent.

4. The CMP composition of claim 3 , wherein the abrasives comprise metal oxides.

5. The CMP composition of claim 3 , wherein the abrasives comprise fumed abrasives or precipitated abrasives.

6. The CMP composition of claim 3 , wherein the surfactant occupies 0.02 wt % of the CMP composition.

7. A chemical mechanical polishing (CMP) slurry, comprising:
an abrasive;
a chelator;
an oxidizing agent; and
a surface modificator, configured to modify a surface from hydrophobic to hydrophilic, wherein the surface modificator comprises polyoxyethylene alkylphenyl ether (PAPE), and the surface modificator occupies 0.01 wt % of the CMP slurry.

8. The CMP slurry of claim 7 , wherein the abrasives comprise metal oxides.

9. The CMP slurry of claim 7 , wherein the abrasives comprise fumed abrasives or precipitated abrasives.

10. The CMP slurry of claim 7 , wherein the surface modificator is configured to modify a surface from hydrophobic to hydrophilic.

11. The CMP slurry of claim 7 , wherein the CMP slurry with the surface modificator reduces dishing by 43% and erosion by 50% compared to CMP slurry without the surface modificator.

12. The CMP slurry of claim 7 , wherein the CMP slurry with the surface modificator increases removal rate by 20% compared to CMP slurry without the surface modificator.

13. A chemical mechanical polishing (CMP) slurry, comprising:
an abrasive;
a chelator;
an oxidizing agent; and
a compound having a first substituent having a hydrophilic end and a second substituent having a hydrophobic end, the first substituent is connected with the second substituent by an oxygen, wherein the compound comprises polyoxyethylene alkylphenyl ether (PAPE), and the compound occupies 0.01 wt % of the CMP slurry.

14. The CMP slurry of claim 13 , wherein the abrasives comprise metal oxides.

15. The CMP slurry of claim 13 , wherein the abrasives comprise fumed abrasives or precipitated abrasives.

16. The CMP slurry of claim 13 , wherein the abrasives comprise metal oxides.

17. The CMP slurry of claim 13 , wherein the abrasives comprise fumed abrasives or precipitated abrasives.

18. The CMP slurry of claim 13 , wherein the compound is configured to modify a surface from hydrophobic to hydrophilic.

19. The CMP slurry of claim 13 , wherein the CMP slurry with the compound reduces dishing by 43% and erosion by 50% compared to CMP slurry without the compound.

20. The CMP slurry of claim 13 , wherein the CMP slurry with the compound increases removal rate by 20% compared to CMP slurry without the compound.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yu An-Dih
• Yang Chi-Ming

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• C09G1/00

  Polishing compositions (French polish C09F11/00; detergents C11D) · CPC title

• C09K3/14

  Anti-slip materials; Abrasives {(products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; friction compositions for brakes or clutches F16D69/02; polishing of semi-conductors H10P52/40)} · CPC title

• C09G1/18

  on other substances · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title