High-K LTCC dielectric compositions and devices

Patent metadata

Field	Value
Publication number	US-10065894-B2
Application number	US-201615310155-A
Country	US
Kind code	B2
Filing date	Jun 29, 2016
Priority date	Aug 5, 2015
Publication date	Sep 4, 2018
Grant date	Sep 4, 2018

Abstract

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

First claim

The invention claimed is:

1. A composition comprising a mixture that, upon firing, forms a dielectric material comprising:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ; and
from about 0.01 wt % to about 9.0 wt % SiO 2 .

2. The composition according to claim 1 , wherein the dielectric material further comprises at least one selected from the group consisting of:
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 4.0 wt % B 2 O 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CuO; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.

3. The composition according to claim 2 , wherein the dielectric material comprises:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ;
from about 0.01 wt % to about 9.0 wt % SiO 2 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 4.0 wt % B 2 O 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CuO; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.

4. A method of forming an electronic component comprising:
applying the composition of claim 3 to a substrate; and firing the substrate at a temperature sufficient to sinter the composition.

5. The method of claim 4 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.

6. An electric or electronic component comprising, prior to firing, the composition of claim 2 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
0.5-10 wt % of at least one glass frit, and
10-40 wt % of an organic portion.

7. A method of forming an electronic component comprising:
applying the composition of claim 2 to a substrate; and firing the substrate at a temperature sufficient to sinter the composition.

8. The method of claim 7 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.

9. An electric or electronic component comprising, prior to firing, the dielectric paste of claim 3 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
0.5-10 wt % of at least one glass frit, and
10-40 wt % of an organic portion.

10. A method of forming an electronic component comprising:
applying the composition of claim 1 to a substrate; and firing the substrate at a temperature sufficient to sinter the composition.

11. The method of claim 10 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.

12. The composition according to claim 1 , wherein the mixture comprises at least one selected from the group consisting of:
from about 0.1 to about 17.0 wt % BaCO 3 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 6.0 wt % H 3 BO 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CuO; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.

13. The composition according to claim 12 , comprising:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ;
from about 0.01 wt % to about 9.0 wt % SiO 2 ;
from about 0.1 to about 17.0 wt % BaCO 3 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 6.0 wt % H 3 BO 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CUD; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.

14. A method of forming an electronic component comprising:
applying the composition of claim 13 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.

15. A method of forming an electronic component comprising:
applying the composition of claim 12 to a substrate; and
firing the substrate at a temperature sufficient to sinter the composition.

16. The method of claim 15 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.

17. An electric or electronic component comprising, prior to firing, the composition of claim 1 , together with a conductive paste comprising:
60-90 wt % Ag+Pd+Pt+Au,
1-10 wt % of an additive selected from the group consisting of silicides, carbides, nitrides, and borides of transition metals,
0.5-10 wt % of at least one glass frit, and
10-40 wt % of an organic portion.

18. The composition according to claim 1 , wherein the mixture comprises at least one of oxides, carbonates, nitrates, sulfates, and phosphates.

19. A lead-free and cadmium-free dielectric paste comprising a solids portion, wherein the solids portion comprises:
from about 20.0 wt % to about 45.0 wt % BaO;
from about 10.0 wt % to about 38.0 wt % SrO;
from about 21.0 wt % to about 47.0 wt % TiO 2 ;
from about 0.1 wt % to about 25.0 wt % WO 3 ;
from about 0.01 wt % to about 9.0 wt % SiO 2 ;
from about 0.1 to about 17.0 wt % BaCO 3 ;
from about 0.1 to about 15.0 wt % ZnO;
from about 0.1 to about 6.0 wt % H 3 BO 3 ;
from about 0.01 to about 2.0 wt % LiF;
from about 0.01 to about 2.0 wt % CUD; and
from about 0.01 to about 2.0 wt % of at least one selected from the group consisting of MnO 2 , Mn 2 O 3 , and MnO.

20. A method of forming an electronic component comprising:
applying the dielectric paste of claim 19 to a substrate; and firing the substrate at a temperature sufficient to sinter the dielectric paste.

21. The method of claim 20 , wherein the firing is conducted at a temperature of from about 800° C. to about 1000° C.

Assignees

• Ferro Corp

Inventors

• Symes Jr Walter J

Classifications

• B32B18/00

  Layered products essentially comprising ceramics, e.g. refractory products · CPC title

• C04B2235/6584

  at an oxygen percentage below that of air · CPC title

• C04B2235/3265

  Mn2O3 · CPC title

• C04B35/468

  based on barium titanates · CPC title

• C04B2237/62

  Forming laminates or joined articles comprising holes, channels or other types of openings · CPC title