Spin-orbit logic with charge interconnects and magnetoelectric nodes

Patent metadata

Field	Value
Publication number	US-10062731-B2
Application number	US-201415523324-A
Country	US
Kind code	B2
Filing date	Dec 26, 2014
Priority date	Dec 26, 2014
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

An apparatus including a spin to charge conversion node; and a charge to spin conversion node, wherein an input to the spin to charge conversion node produces an output at the charge to spin conversion node. An apparatus including a magnet including an input node and output node, the input node including a capacitor operable to generate magnetic response in the magnet and the output node including at least one spin to charge conversion material. A method including injecting a spin current from a first magnet; converting the spin current into a charge current operable to produce a magnetoelectric interaction with a second magnet; and changing a direction of magnetization of the second magnet in response to the magnetoelectric interaction. A method including injecting a spin current from an input node of a magnet; and converting the spin current into a charge current at an output node of the magnet.

First claim

The invention claimed is:

1. An apparatus comprising:
a spin to charge conversion node; and
a charge to spin conversion node,
wherein an input to the spin to charge conversion node produces an output at the charge to spin conversion node, wherein the spin to charge conversion node comprises a magnet coupled to at least one material, wherein a spin current generated by the magnet is operable to create a transverse charge current in the material, wherein the at least one material comprises a material stack comprising a first material comprising a non-magnetic metal and a second material comprising a spin orbit coupling in response to a spin current or a material having a spin hall effect coefficient.

2. The apparatus of claim 1 , wherein the at least one material will exhibit a spin orbit effect in a metallic system.

3. The apparatus of claim 2 , wherein the at least one material will produce a spin orbit coupling in response to a spin current.

4. The apparatus of claim 1 , wherein the material stack further comprises a two-dimensional electron gas.

5. The apparatus of claim 1 , wherein the magnet comprises a first magnet and the charge to spin conversion node comprises a second magnet, wherein the charge current is operable to induce a magnetoelectric effect to switch a direction of magnetization of the second magnet.

6. An apparatus comprising:
a spin to charge conversion node; and
a charge to spin conversion node,
wherein an input to the spin to charge conversion node produces an output at the charge to spin conversion node, wherein the spin to charge conversion node comprises a magnet coupled to at least one material, wherein a spin current generated by the magnet is operable to create a transverse charge current in the material, wherein the magnet comprises a first magnet and the charge to spin conversion node comprises a second magnet, wherein the charge current is operable to induce a magnetoelectric effect to switch a direction of magnetization of the second magnet; and a channel comprising an electrically conductive material, wherein the charge to spin conversion node comprises a capacitor comprising the channel and the second magnet as electrodes and at least one material therebetween where, in response to a voltage on the capacitor, a direct or hybrid magnetoelectric effect is produced.

7. The apparatus of claim 1 , wherein the spin to charge conversion node and the charge to spin conversion node comprise a first device of a plurality of devices, wherein the plurality of devices perform a logical operation.

8. The apparatus of claim 7 , wherein the plurality of devices comprise a majority gate structure comprising a plurality of inputs and an output, each input comprising a spin to charge conversion node and a charge to spin conversion node, wherein a magnetization of the output is determined by a majority of charge current passed into the plurality of inputs.

9. An apparatus comprising:
a spin to charge conversion node; and
a charge to spin conversion node,
wherein an input to the spin to charge conversion node produces an output at the charge to spin conversion node, wherein the spin to charge conversion node and the charge to spin conversion node comprise a first device of a plurality of devices, wherein the plurality of devices perform a logical operation, wherein the first device comprises a charge output to a second device, the charge output operable to disable/enable an output signal from the second device.

10. An apparatus comprising:
a magnet comprising an input node and an output node, the input node comprising a capacitor operable to generate a magnetic response in the magnet and the output node comprising at least one spin to charge conversion material, wherein the at least one spin to charge material comprises a first material of a material stack, the material stack further comprising a second material comprising a non-magnetic metal.

11. The apparatus of claim 10 , wherein the at least one spin to charge conversion material will exhibit a spin orbit effect in a metallic system.

12. The apparatus of claim 11 , wherein the at least one spin to charge material will produce a charge current in response to a spin current.

13. The apparatus of claim 11 , wherein the at least one spin to charge material comprises a spin hall effect coefficient.

14. The apparatus of claim 10 , wherein the material stack further comprises a two-dimensional electron gas.

15. The apparatus of claim 10 , wherein the magnet comprising the input node and the output node comprises a first device of a plurality of devices, wherein the plurality of devices perform a logical operation.

16. The apparatus of claim 15 , wherein the plurality of devices comprise a majority gate structure comprising a plurality of inputs and an output, each input comprising a magnet comprising an input node including a capacitor operable to generate a spin current in the magnet and an output node comprising at least one spin to charge conversion material, wherein a magnetization of the output is determined by a majority of charge current passed into the plurality of inputs.

17. An apparatus comprising:
a magnet comprising an input node and an output node, the input node comprising a capacitor operable to generate a magnetic response in the magnet and the output node comprising at least one spin to charge conversion material, wherein the magnet comprising the input node and the output node comprises a first device of a plurality of devices, wherein the plurality of devices perform a logical operation, wherein the first device comprises a charge output is coupled to a second device, the charge output operable to disable/enable an output signal from the second device.

18. A method comprising:
injecting a spin current from a first magnet;
converting the spin current into a charge current operable to produce a magnetoelectric interaction with a second magnet; and
changing a direction of magnetization of the second magnet in response to the magnetoelectric interaction, wherein one of the first magnet or the second magnet has an output node comprising at least one spin to charge conversion material, wherein the at least one spin to charge material comprises a first material of a material stack, the material stack further comprising a second material comprising a non-magnetic metal.

19. The method of claim 18 , wherein changing a direction of magnetization of the second magnet comprises changing from a direction of magnetization that is the different than the first magnet to a direction of magnetization that is the same as a direction of magnetization as the first magnet.

20. The method of claim 18 , wherein changing a direction of magnetization of the second magnet comprises changing from a direction of magnetization that is the same as the first magnet to a direction of magnetization that is different than a direction of magnetization of the first magnet.

21. A method comprising:
injecting a spin current from an input node of a magnet; and converting the spin current into a charge current at an output node of the magnet, wherein the first device is coupled to a second device, the method comprising:
passing a charge current from the first device to the second device; and
disabling/enabling an output signal of the second device based on the charge current.

22. The method of claim 21 , wherein the magnet comprises a first device of a plurality of devices, wherein the plurality of devices perform a logical oper

Assignees

• Intel Corp

Inventors

• Manipatruni Sasikanth
• Nikonov Dmitri E
• Young Ian A

Classifications

• H01L27/22 Primary

  Electricity · mapped topic

• H03K19/173 Primary

  using elementary logic circuits as components · CPC title

• H03K19/18

  using galvano-magnetic devices, e.g. Hall-effect devices · CPC title

• H10N50/20

  Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10) · CPC title

• H10N59/00

  Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) · CPC title