Method of cleaning semiconductor device

Patent metadata

Field	Value
Publication number	US-10062560-B1
Application number	US-201715497647-A
Country	US
Kind code	B1
Filing date	Apr 26, 2017
Priority date	Apr 26, 2017
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

Aspects of the present disclosure provide a method of cleaning a semiconductor device. The method includes providing a semiconductor wafer having an exposed cobalt surface and rinsing the exposed cobalt surface with cathode water having a pH greater than 9 and an oxidation reduction potential of less than 0.0.

First claim

We claim:

1. A method of cleaning a semiconductor device, comprising:
providing a semiconductor wafer having an exposed cobalt surface; and
rinsing the exposed cobalt surface with cathode water having a pH greater than 9 and an oxidation reduction potential of less than 0.0.

2. The method of claim 1 , wherein the cobalt surface is rinsed for a time of about 30 seconds to about 600 seconds.

3. The method of claim 1 , wherein the cathode water has a pH greater than 10.

4. The method of claim 1 , wherein the cathode water has a pH greater than 11.

5. The method of claim 1 , further comprising producing the cathode water by;
providing deionized water with a NH 4 OH concentration of from 100 parts per million (ppm) to 1000 ppm to an anode cell;
providing deionized water to a cathode cell, wherein the anode cell and cathode cell are separated by an ion exchange membrane; and
applying a voltage between the anode cell and the cathode cell whereby the cations pass through the ion exchange membrane to raise the pH of the cathode water.

6. The method of claim 1 , further comprising drying the rinsed cobalt surface.

7. The method of claim 6 , further comprising metalizing the rinsed cobalt surface.

8. The method of claim 1 , wherein the providing a semiconductor wafer having an exposed cobalt surface comprises:
providing a semiconductor wafer having a mask covering a portion of the semiconductor wafer and not covering regions having the cobalt surface thereunder;
etching the semiconductor wafer in the regions not covered by the mask to expose a cobalt surface; and
removing the mask.

9. The method of claim 1 , wherein rinsing of the exposed cobalt surface converts cobalt oxide (CoO) and cobalt fluoride (CoF 2 ) to cobalt hydroxide (Co(OH) 2 ).

10. A method of cleaning a semiconductor device, comprising:
providing an electrolyzer including a cathode cell having a cathode, an anode cell having an anode and an ion exchange membrane separating the cathode cell and the anode cell;
supplying deionized water to the cathode cell;
supplying deionized water having NH 4 OH at a concentration of 100 parts per million (ppm) to 1000 ppm to the anode cell;
applying a voltage between the anode cell and the cathode cell whereby the cations pass through the ion exchange membrane to raise the pH of the deionized water in the cathode cell to greater than 9 and an oxidation reduction potential of less than 0.0; and
supplying the water from the cathode cell to a semiconductor wafer having an exposed cobalt surface to clean the semiconductor wafer.

11. The method of claim 10 , wherein the semiconductor wafer is supplied with the water for a time of about 30 seconds to about 600 seconds.

12. The method of claim 10 , wherein the semiconductor wafer is supplied with the water for a time of from 30 seconds to 180 seconds.

13. The method of claim 10 , wherein the deionized water in the cathode cell has a pH greater than 10.

14. The method of claim 10 , wherein the deionized water in the cathode cell has a pH greater than 11.

15. The method of claim 10 , wherein supplying the water from the cathode cell to exposed cobalt surface converts cobalt oxide (CoO) and cobalt fluoride (CoF 2 ) to cobalt hydroxide (Co(OH) 2 ).

16. A method of cleaning and passivating a semiconductor device, comprising:
providing an electrolyzer including a cathode cell having a cathode, an anode cell having an anode and an ion exchange membrane separating the cathode cell and the anode cell;
supplying deionized water to the cathode cell;
supplying deionized water having NH 4 OH at a concentration of 100 parts per million (ppm) to 1000 ppm to the anode cell;
applying a voltage between the anode cell and the cathode cell whereby the cations pass through the ion exchange membrane to raise the pH of the deionized water in the cathode cell to greater than 9 and provide an oxidation reduction potential of less than 0.0; and
supplying the water from the cathode cell to a semiconductor wafer having an exposed cobalt surface, wherein the exposed cobalt surface contains cobalt oxide (CoO) and cobalt fluoride (CoF 2 ) for a time sufficient to passivate and clean the semiconductor wafer.

17. The method of claim 16 , wherein the semiconductor wafer is supplied with the water for a time of about 30 seconds to about 600 seconds.

18. The method of claim 16 , wherein the deionized water in the cathode cell has a pH greater than 10.

19. The method of claim 16 , wherein the semiconductor wafer is supplied with the water for a time of from 30 seconds to 180 seconds.

20. The method of claim 16 , wherein the deionized water in the cathode cell has a pH greater than 11.

Assignees

• Globalfoundries Inc

Inventors

• Ryan Kevin J
• Siddiqui Shariq
• Mont Frank W
• Peethala Cornelius B

Classifications

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10W20/056 Primary

  by filling conductive material into holes, grooves or trenches · CPC title

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• C25F1/00 Primary

  Electrolytic cleaning, degreasing, pickling or descaling · CPC title