Copper alloy sputtering target and manufacturing method of copper alloy sputtering target

US10062552B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10062552-B2
Application numberUS-201414333812-A
CountryUS
Kind codeB2
Filing dateJul 17, 2014
Priority dateJul 31, 2013
Publication dateAug 28, 2018
Grant dateAug 28, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.99% or more by mass; melting the copper so as to obtain a molten copper; controlling components so as to obtain a molten metal having a predetermined component composition by the addition of Ca having a purity of 98.5% or more by mass into the molten copper and by melting the Ca; casting the molten metal so as to obtain an ingot; and performing stress relieving annealing after performing hot rolling to the ingot.

First claim

Opening claim text (preview).

What is claimed is: 1. A copper alloy sputtering target formed by a copper alloy comprising: the content of Ca being 0.3 to 1.7% by mass; the total content of Mg and Al being 5 ppm or less by mass; the content of oxygen being 20 ppm or less by mass; and the remainder being Cu and inevitable impurities, wherein Fe, Mn and Si are contained as the inevitable impurities in the copper alloy sputtering target, and the content of Fe is 1 ppm or less by mass, the content of Mn is 1 ppm or less by mass, and the content of Si is 1 ppm or less by mass so that the contents of Mg, Al, Fe, Mn, and Si are minimized to suppress a generation of Ca-based complex oxide and to reduce the Ca-based complex oxide appearing on the surface of the sputtering target.

Assignees

Inventors

Classifications

  • Plural materials · CPC title

  • by melting {(C22C1/1036 takes precedence)} · CPC title

  • Feeding additives, powders, or the like · CPC title

  • Copper alloys · CPC title

  • Manufacturing of targets · CPC title

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What does patent US10062552B2 cover?
A copper alloy sputtering target is formed by a copper alloy including the content of Ca being 0.3 to 1.7% by mass, the total content of Mg and Al being 5 ppm or less by mass, the content of oxygen being 20 ppm or less by mass, and the remainder is Cu and inevitable impurities. A manufacturing method of a copper alloy sputtering target comprises steps of: preparing a copper having purity of 99.…
Who is the assignee on this patent?
Mitsubishi Materials Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/3429. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 28 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).