Thin-film ceramic capacitor

Patent metadata

Field	Value
Publication number	US-10062516-B2
Application number	US-201715634327-A
Country	US
Kind code	B2
Filing date	Jun 27, 2017
Priority date	Nov 23, 2016
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

A thin-film ceramic capacitor includes: a body in which a plurality of dielectric layers and first and second electrode layers are alternately disposed on a substrate; and first and second electrode pads disposed on an external surface of the body. The dielectric layer contains a mixed phase of a perovskite phase having ferroelectric properties and a pyrochlore phase having paraelectric properties, the pyrochlore phase being disposed on interfaces between the dielectric layers and the first and second electrode layers in lower portions of the dielectric layers.

First claim

What is claimed is:

1. A thin-film ceramic capacitor comprising:
a body in which a plurality of dielectric layers and first and second electrode layers are alternately disposed on a substrate; and
first and second electrode pads disposed on an external surface of the body,
wherein the dielectric layer contains a mixed phase of a perovskite phase having ferroelectric properties and a pyrochlore phase having paraelectric properties, the pyrochlore phase being disposed on interfaces between the dielectric layers and the first and second electrode layers in lower portions of the dielectric layers with respect to the substrate.

2. The thin-film ceramic capacitor of claim 1 , wherein the pyrochlore phase has a triangular pyramid shape.

3. The thin-film ceramic capacitor of claim 1 , wherein in a single dielectric layer, a volume fraction of the perovskite phase having the ferroelectric properties, based on an overall volume of the single dielectric layer, is 50 to 97 vol %.

4. The thin-film ceramic capacitor of claim 1 , wherein the perovskite phase having the ferroelectric properties has a structure in which the perovskite phase is doped with niobium (Nb).

5. The thin-film ceramic capacitor of claim 1 , wherein the pyrochlore phase is RE 2 Ti 2 O 7 , where RE is a rare earth element.

6. The thin-film ceramic capacitor of claim 1 , wherein a temperature coefficient of capacitance (TCC) of the mixed phase of the perovskite phase having the ferroelectric properties and the pyrochlore phase having the paraelectric properties is within 20% from a temperature range from −55° C. to 125° C.

7. The thin-film ceramic capacitor of claim 1 , wherein among the plurality of vias, a first via connects the first electrode layer and the first electrode pad to each other and penetrates from one surface of the body to a lowermost first electrode layer adjacent to the substrate.

8. The thin-film ceramic capacitor of claim 1 , wherein among the plurality of vias, a second via connects the second electrode layer and the second electrode pad to each other and penetrates from one surface of the body to a lowermost second electrode layer adjacent to the substrate.

9. The thin-film ceramic capacitor of claim 1 , wherein the first via is connected to substantially all of the first electrode layers disposed in the body.

10. The thin-film ceramic capacitor of claim 1 , wherein the second via is connected to substantially all of the second electrode layers disposed in the body.

11. The thin-film ceramic capacitor of claim 1 , wherein an insulating layer is disposed on a second electrode layer exposed in the first via and a first electrode layer exposed in the second via.

12. The thin-film ceramic capacitor of claim 1 , wherein in the plurality of vias, a width of each step is increased in a direction from the substrate to an upper portion of the body.

Assignees

• Samsung Electro Mech

Inventors

• Kang Yun Sung
• Lee Hai Joon
• Park Tae Joon
• Oh Dong Joon
• Kim Yun Hee
• Lee Kyo Yeol
• Lim Seung Mo
• Kang In Young

Classifications

• H01G4/005

  Electrodes · CPC title

• H01G4/1227

  based on alkaline earth titanates · CPC title

• H01G4/33 Primary

  Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)} · CPC title

• H01G4/236

  leading through the housing, i.e. lead-through · CPC title

• H01G4/228

  Terminals · CPC title