Voltage regulator

Patent metadata

Field	Value
Publication number	US-10061337-B2
Application number	US-201615343485-A
Country	US
Kind code	B2
Filing date	Nov 4, 2016
Priority date	Nov 4, 2015
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

Various embodiments provide a voltage regulator. The voltage regulator includes a supply voltage input to apply an input supply voltage, a supply voltage output to output an output supply voltage, and a first field effect transistor and a second field effect transistor, which are connected in series between the voltage supply input and the voltage supply output. The first field effect transistor has a higher operating voltage than the second field effect transistor. The voltage regulator further includes a regulator designed to set the gate voltage of the first field effect transistor and the gate voltage of the second field effect transistor to regulate the output supply voltage on the basis of a reference voltage.

First claim

What is claimed is:

1. A voltage regulator, comprising:
a voltage supply input to apply an input supply voltage;
a voltage supply output to output an output supply voltage;
a first field effect transistor and a second field effect transistor, which are connected in series between the voltage supply input and the voltage supply output, wherein the first field effect transistor has a higher operating voltage than the second field effect transistor; and
a regulator designed to set a gate voltage of the first field effect transistor and a gate voltage of the second field effect transistor to regulate the output supply voltage based on a reference voltage;
wherein the regulator comprises a further field effect transistor, which is connected firstly to the gate of the first field effect transistor and the gate of the second field effect transistor and secondly to a low supply potential, and the regulator is designed to reduce the gate voltage of the first field effect transistor and the gate voltage of the second field effect transistor by means of opening the further field effect transistor.

2. The voltage regulator of claim 1 ,
wherein the first field effect transistor is a high-voltage transistor and the second field effect transistor is a low-voltage transistor.

3. The voltage regulator of claim 1 ,
wherein the first field effect transistor has a higher resistance than the second field effect transistor.

4. The voltage regulator of claim 1 ,
wherein the first field effect transistor has a higher gate oxide thickness than the second field effect transistor.

5. The voltage regulator of claim 1 ,
wherein the second field effect transistor has a larger channel width than the first field effect transistor.

6. The voltage regulator of claim 1 ,
wherein the second field effect transistor has a higher gain than the first field effect transistor.

7. The voltage regulator of claim 1 ,
wherein the first field effect transistor and the second field effect transistor form a cascode.

8. The voltage regulator of claim 1 ,
wherein the regulator is designed to regulate the output supply voltage to a desired voltage value.

9. The voltage regulator of claim 8 ,
wherein the desired voltage value is given by the reference voltage.

10. The voltage regulator of claim 1 ,
wherein the regulator is designed to increase the gate voltage of the first field effect transistor and the gate voltage of the second field effect transistor if the output supply voltage is lower than a desired voltage value, and to reduce the gate voltage of the first field effect transistor and the gate voltage of the second field effect transistor if the output supply voltage is higher than the desired voltage value.

11. The voltage regulator of claim 10 ,
wherein the regulator comprises a charge pump and is designed to increase the gate voltage of the first field effect transistor and the gate voltage of the second field effect transistor by means of the charge pump.

12. The voltage regulator of claim 1 ,
wherein the regulator comprises a comparator designed to compare the reference voltage with a comparison voltage representing the output supply voltage, and the regulator is designed to set the gate voltage of the first field effect transistor and the gate voltage of the second field effect transistor based on the result of the comparison.

13. The voltage regulator of claim 1 , further comprising:
a voltage divider, which is connected to the voltage supply output and is designed to generate the comparison voltage from the output supply voltage.

14. The voltage regulator of claim 1 ,
wherein the gate of the first field effect transistor is coupled to an anode of a diode and the gate of the second field effect transistor is coupled to a cathode of the diode.

15. The voltage regulator of claim 14 ,
wherein the diode is implemented by means of a field effect transistor connected as a diode.

16. The voltage regulator of claim 1 ,
wherein the second field effect transistor is formed in a triple well structure.

17. The voltage regulator of claim 1 ,
wherein the first field effect transistor and the second field effect transistor are n-channel field effect transistors.

Assignees

• Infineon Technologies Ag

Inventors

• Mayerl Christoph

Classifications

• G05F1/595 Primary

  semiconductor devices connected in series · CPC title

• G05F1/56

  using semiconductor devices in series with the load as final control devices (G05F1/461 takes precedence) · CPC title