Scanning UV light source utilizing semiconductor heterostructures

Patent metadata

Field	Value
Publication number	US-10056735-B1
Application number	US-201615162389-A
Country	US
Kind code	B1
Filing date	May 23, 2016
Priority date	May 23, 2016
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

Embodiments regard a scanning UV (ultra violet) light source utilizing semiconductor heterostructures. An embodiment of an apparatus includes a substrate with a film of light producing material on a first surface of the substrate, wherein the film includes one or more semiconductor heterostructures; and an electron beam apparatus, the electron beam apparatus to generate an electron beam and direct the electron beam to a location on the film of light producing material to generate a light beam.

First claim

What is claimed is:

1. An apparatus comprising:
a substrate with a film of light producing material on a first surface of the substrate, wherein the film of light producing material includes one or more semiconductor heterostructures; and
an electron beam apparatus, the electron beam apparatus coupled to generate an electron beam and steer the electron beam to a plurality of locations on the film of light producing material to generate a light beam, including ultraviolet light, where the electron beam is incident on the film of light producing material, wherein the film of light producing material is structured to facilitate analog scanning of the beam of light, not on a predefined grid, where the electron beam is incident on the film of light producing material.

2. The apparatus of claim 1 , wherein the one or more semiconductor heterostructures include one or more double heterostructures.

3. The apparatus of claim 1 , wherein the one or more semiconductor heterostructures include one or more quantum wells.

4. The apparatus of claim 3 , wherein the one or more semiconductor heterostructures includes a first barrier layer and a second barrier layer, and wherein the one or more quantum wells are disposed between the first barrier layer and the second barrier layer, and the first barrier layer and a second barrier layer have a wider bandgap than the one or more quantum wells.

5. The apparatus of claim 4 , further comprising a grating disposed in the first barrier layer to provide in-plane reflection and vertical out-coupling in the generation of the light beam.

6. The apparatus of claim 1 , wherein the one or more semiconductor heterostructures includes one or more of a quantum wire or quantum dot.

7. The apparatus of claim 1 , wherein the light producing material includes AlGaN (Aluminum Gallium Nitride).

8. The apparatus of claim 1 , wherein the film is located between reflective surfaces.

9. The apparatus of claim 8 , wherein the reflective surfaces include a distributed Bragg mirror.

10. The apparatus of claim 8 , wherein the reflective surfaces include the interface of the film with air or a vacuum.

11. The apparatus of claim 1 , wherein substrate includes one of sapphire or AlN (Aluminum Nitride) material.

12. The apparatus of claim 1 , wherein the generated light beam is a laser light beam.

13. The apparatus of claim 1 , wherein the electron beam apparatus includes electron guns to generate electron beams.

14. The apparatus of claim 13 , wherein the electron beam apparatus further includes focusing coils to focus the generated electron beams into a focused electron beam.

15. The apparatus of claim 14 , wherein the electron beam apparatus further includes deflection coils to deflect the focused electron beam and steer the electron beam to the plurality of locations.

16. The apparatus of claim 1 , wherein the electron beam apparatus includes an electron emitter array to generate an electron beam by activating an appropriate emitter in the emitter array.

17. A stereolithography system including:
a tank to contain a liquid photopolymer resin;
a moveable platform to hold a solid object generated by photopolymerization of the resin;
a UV (ultraviolet) light source including:
a substrate with a film of light producing material on a first surface of the substrate, wherein the film of light producing material includes one or more semiconductor heterostructures, and
an electron beam apparatus, the electron beam apparatus coupled to generate an electron beam and direct the electron beam to a plurality of locations on the film of light producing material to generate a light beam where the electron beam is incident on the film of light producing material, wherein the film of light producing material is structured to facilitate analog scanning of the beam of light, not on a predefined grid, where the electron beam is incident on the film of light producing material; and

a controller to provide control for one or more of the UV light source and the platform.

18. The system of claim 17 , wherein the one or more semiconductor heterostructures include one or more double heterostructures.

19. The system of claim 17 , wherein the one or more semiconductor heterostructures include one or more of a quantum well, a quantum wire, or a quantum dot.

20. The system of claim 17 , wherein the light source is to direct the generated light beam on a layer of the resin to generate a layer of the solid object.

21. The system of claim 17 , wherein the light producing material includes AlGaN (Aluminum Gallium Nitride).

22. The system of claim 17 , wherein the film is located between reflective surfaces.

23. The system of claim 17 , wherein substrate includes one of sapphire or AlN (Aluminum Nitride) material.

24. The system of claim 17 , wherein the generated light beam is a laser light beam.

25. The apparatus of claim 1 , wherein the electron beam apparatus is coupled to rasterize the electron beam across the film of light producing material.

Assignees

• X Dev Llc

Inventors

• Schubert Martin F

Classifications

• H01S5/125

  Distributed Bragg reflector [DBR] lasers · CPC title

• B29C64/291

  for operating globally, e.g. together with selectively applied activators or inhibitors · CPC title

• H01J37/21

  Means for adjusting the focus · CPC title

• H01S5/34333 Primary

  with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser · CPC title

• B29C64/264

  Arrangements for irradiation · CPC title