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Structure for electron-beam pumped edge-emitting device and methods for producing same

US8964796B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8964796-B2
Application numberUS-201313920248-A
CountryUS
Kind codeB2
Filing dateJun 18, 2013
Priority dateJun 18, 2013
Publication dateFeb 24, 2015
Grant dateFeb 24, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requiring a p-n junction, and is therefore not embedded within nor part of a p-n junction. Doping with p-type species is obviated, reducing device loss and permitting operation at a short wavelengths, such as below 300 nm. Various structures, such as a top-side cladding layer, are disclosed for discharging beam-induced charge. A single device may be operated with multiple electron beam pumps, either to enable a relatively thick active layer or to drive multiple separate active layers. Cooperatively curved end facets accommodate for possible off-axis resonance within the active region(s).

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device for stimulated emission, comprising: a substrate; a light guiding structure disposed over said substrate; a light emitting layer disposed within the light guiding layer; a discharge structure for discharging excess electric charge within said semiconductor device for stimulated emission, wherein the discharge structure comprises: an n-doped conductive layer; and (a) a metal film; or (b) a metal contact; or (c) a connection to…

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Frequently asked questions

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What does patent US8964796B2 cover?
A semiconductor light emitting device includes a light guiding structure, a light emitting layer disposed within the light guiding structure, and a structure for discharging excess electric charge within the device. The device may be excited by an electron beam, as opposed to an optical beam, to create electron-hole pairs. The light emitting layer is configured for light generation without requ…
Who is the assignee on this patent?
Palo Alto Res Ct Inc
What technology area does this patent fall under?
Primary CPC classification H01S5/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).