Heating apparatus, substrate heating apparatus, and method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-10056273-B2
Application number	US-201715696213-A
Country	US
Kind code	B2
Filing date	Sep 6, 2017
Priority date	Sep 16, 2016
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

A heating apparatus includes a heater, an electron reflection plate, a filament arranged between the heater and the electron reflection plate, a heating power supply configured to supply an AC voltage between a first terminal and a second terminal of the filament to emit thermoelectrons from the filament, an acceleration power supply configured to supply an acceleration voltage between the filament and the heater, and a resistor arranged so as to form a path which connects the electron reflection plate and the heating power supply.

First claim

The invention claimed is:

1. A heating apparatus comprising:
a heater;
an electron reflection plate;
a filament arranged between the heater and the electron reflection plate;
a heating power supply configured to supply an AC voltage between a first terminal and a second terminal of the filament to emit thermoelectrons from the filament;
an acceleration power supply configured to supply an acceleration voltage between the filament and the heater;
a resistor arranged so as to form a path which connects the electron reflection plate and the heating power supply; and
wherein the heating power supply supplies the AC voltage to the filament, forming a closed circuit passing through the filament, the electron reflection plate, and the path.

2. A heating apparatus comprising:
a heater;
an electron reflection plate;
a filament arranged between the heater and the electron reflection plate;
a heating power supply configured to supply an AC voltage between a first terminal and a second terminal of the filament to emit thermoelectrons from the filament;
an acceleration power supply configured to supply an acceleration voltage between the filament and the heater; and
a resistor arranged so as to form a path which connects the electron reflection plate and the heating power supply;
wherein the heating power supply includes a third terminal connected to the first terminal of the filament and a fourth terminal connected to the second terminal of the filament, the acceleration power supply supplies the acceleration voltage between the fourth terminal and the heater, and the resistor forms the path so as to connect the electron reflection plate and the fourth terminal.

3. A heating apparatus comprising:
a heater;
an electron reflection plate;
a filament arranged between the heater and the electron reflection plate;
a heating power supply configured to supply an AC voltage between a first terminal and a second terminal of the filament to emit thermoelectrons from the filament;
an acceleration power supply configured to supply an acceleration voltage between the filament and the heater; and
a resistor arranged so as to form a path which connects the electron reflection plate and the heating power supply;
wherein the heating power supply includes a third terminal connected to the first terminal of the filament and a fourth terminal connected to the second terminal of the filament, the acceleration power supply supplies the acceleration voltage between the fourth terminal and the heater, and the resistor forms the path so as to connect the electron reflection plate and the third terminal.

4. The heating apparatus according to claim 1 , wherein the resistor has a resistance value higher than a resistance value between the filament and the electron reflection plate in a state in which the heating power supply supplies the AC voltage to the filament.

5. The heating apparatus according to claim 1 , wherein the resistor has a resistance value within a range not less than 100Ω and not greater than 100 kΩ.

6. The heating apparatus according to claim 5 , wherein the resistor has a resistance value within a range not less than 1 kΩ and not greater than 10 kΩ.

7. The heating apparatus according to claim 1 , wherein the resistor contains a molybdenum silicide alloy.

8. The heating apparatus according to claim 1 , wherein the filament is a single loop filament.

9. A substrate heating apparatus comprising:
a substrate holding unit configured to hold a substrate; and
a heating apparatus defined in claim 1 arranged so as to heat the substrate held by the substrate holding unit.

10. A device manufacturing method comprising:
a step of implanting an impurity in a substrate; and
a step of heating the substrate by using a substrate heating apparatus defined in claim 9 .

Assignees

• Canon Anelva Corp

Inventors

• Sasaki Masao
• Yoshibayashi Kazutoshi
• Sato Kenji
• Murata Kenzou

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0434 Primary

  mainly by convection · CPC title

• H10P32/00

  Diffusion of dopants within, into or out of wafers, substrates or parts of devices (during formation of materials H10P14/00) · CPC title