Method for forming a vertical hetero-stack and a device including a vertical hetero-stack

Patent metadata

Field	Value
Publication number	US-10056253-B2
Application number	US-201715616198-A
Country	US
Kind code	B2
Filing date	Jun 7, 2017
Priority date	Jun 7, 2016
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to form a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure. The first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material. The example method includes providing the first nanostructure on a substrate. The method also includes forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface. The method further includes forming the second nanostructure by a vapor deposition process. The second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

First claim

What is claimed is:

1. A method for forming a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure, wherein the first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material, the method comprising:
providing the first nanostructure on a substrate, wherein the upper surface of the first nanostructure is formed by a basal plane of the first TMDC material;
forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface; and
forming the second nanostructure by a vapor deposition process, wherein the second TMDC material nucleates on the reactive layer of molecules along the periphery and grows laterally therefrom to form the second nanostructure on the upper surface.

2. The method according to claim 1 , wherein the second nanostructure is formed directly on the upper surface of the first nanostructure.

3. The method according to claim 1 , further comprising, prior to forming the second nanostructure, forming a dielectric layer on the substrate adjacent to the first nanostructure by a dielectric layer deposition process, wherein the dielectric layer is formed with a thickness corresponding to a thickness of the first nanostructure.

4. The method according to claim 1 , wherein each molecule of the reactive layer of molecules comprises:
a head group bonding to the first nanostructure; and
a tail group forming a reactive site for a precursor of the vapor deposition process.

5. The method according to claim 4 , wherein the reactive layer of molecules is formed by a self-assembled monolayer of molecules.

6. The method according to claim 4 , wherein each molecule of the reactive layer of molecules comprises:
a thiol head group or a selenol head group; and
a thiol tail group, a hydroxy tail group, or a carboxyl tail group.

7. The method according to claim 3 , further comprising:
prior to forming the dielectric layer on the substrate adjacent to the first nanostructure, forming a process layer of molecules on the first nanostructure along the periphery of the upper surface, wherein each molecule of the process layer of molecules comprises:
a head group bonding to the first nanostructure; and
a tail group that is inert with respect to the dielectric layer deposition process, and
subsequent to forming the dielectric layer, removing the process layer, wherein a trench is formed between the dielectric layer and the first nanostructure along the periphery of the upper surface; and
forming the reactive layer of molecules in the trench.

8. The method according to claim 7 , wherein a length of the molecules of the process layer of molecules is greater than a length of the molecules of the reactive layer of molecules.

9. The method according to claim 3 , further comprising:
prior to forming the dielectric layer on the substrate adjacent to the first nanostructure, forming a process layer of molecules on the first nanostructure along the periphery of the upper surface, wherein each molecule of the process layer of molecules comprises
a head group bonding to the first nanostructure; and
a tail group that is inert with respect to the dielectric layer deposition process, and
subsequent to forming the dielectric layer, converting the process layer into the reactive layer of molecules by activating the tail group of the molecules of the process layer with respect to a precursor of the vapor deposition process.

10. The method according to claim 1 , further comprising:
forming a mask on the first nanostructure, wherein the mask covers a first portion of the first nanostructure; and
exposing a second portion of the first nanostructure, wherein during the vapor deposition process the mask prevents formation of the second nanostructure on the upper surface of the first portion of the first nanostructure.

11. The method according to claim 10 , wherein the reactive layer of molecules is formed along an entire portion of the periphery of the upper surface being exposed by the mask.

12. The method according to claim 10 , wherein the second TMDC material, during the vapor deposition process, is grown laterally to form:
a first portion of the second nanostructure overlapping the second portion of the first nanostructure; and
a second portion of the second nanostructure protruding beyond the periphery of the upper surface of the second portion of the first nanostructure.

13. The method according to claim 1 , further comprising:
forming a gate stack on an upper surface of the second nanostructure above a region of overlap between the second nanostructure and the first nanostructure;
forming a source or drain electrode in contact with a first portion of the first nanostructure; or
forming a source or drain electrode in contact with the second nanostructure.

14. The method according to claim 1 , further comprising:
forming a nanostructure of a sacrificial material on the substrate; and
forming the first nanostructure on the substrate by a first deposition process during which a feature of the sacrificial material is removed from the substrate by forming a volatile reaction product with a precursor of the first deposition process,
wherein the sacrificial material is replaced by the first TMDC material,
wherein the first TMDC material is selectively deposited on surface portions of the substrate to form the first nanostructure of the first TMDC material, and
wherein the surface portions were covered by the feature of the sacrificial material.

15. A device including a vertical hetero-stack of a first TMDC material and a second TMDC material, the device comprising:
a first nanostructure of the first TMDC material,
wherein an upper surface of the first nanostructure is formed by a basal plane of the first TMDC material;
a layer of molecules arranged on at least one side surface of the first nanostructure and extending along a periphery of the upper surface;
a second nanostructure of the second TMDC material arranged on the upper surface of the first nanostructure;
a substrate; and
a dielectric layer arranged on the substrate in a region adjacent to the first nanostructure,
wherein the dielectric layer has a thickness corresponding to a thickness of the first nanostructure,
wherein the second nanostructure is displaced in relation to the first nanostructure to expose a first portion of the first nanostructure and to overlap a second portion of the first nanostructure,
wherein a first portion of the second nanostructure is arranged to overlap the second portion of the first nanostructure, and
wherein a second portion of the second nanostructure is arranged to protrude beyond the periphery of the upper surface of the first nanostructure.

16. A vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure, wherein the first nanostructure is formed by a first transition metal dichalcogenide, TMDC, material and the second nanostructure is formed by a second TMDC material, wherein the vertical hetero-stack is formed by a process that comprises:
providing the first nanostructure on a substrate,
wherein the upper surface of the first nanostructure is formed by a basal plane of the first TMDC material;
forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface; and
forming the second nanostructure by a vapor deposition process,
wherein the second TMDC material nucleates on th

Assignees

• Imec Vzw

Inventors

• Delabie Annelies
• Armini Silvia

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/3236

  being chalcogenide semiconducting materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/276

  Lateral overgrowth · CPC title

• H10P14/274

  using seed materials · CPC title

• H10P14/272

  using mask materials other than SiO2 or SiN · CPC title