Copper alloy for electronic device, method for producing copper alloy for electronic device, and copper alloy rolled material for electronic device

Patent metadata

Field	Value
Publication number	US-10056165-B2
Application number	US-201113695666-A
Country	US
Kind code	B2
Filing date	May 13, 2011
Priority date	May 14, 2010
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

This copper alloy for an electronic device is composed of a binary alloy of Cu and Mg which is composed of Mg at a content of 3.3 to 6.9 atomic %, and a remainder of Cu and inevitable impurities, and a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %, and/or an average number of intermetallic compounds having grain sizes of 0.1 μm or more is in a range of 1/μm 2 or less,

σ≤{1.7241/(−0.0347× A 2 +0.6569× A +1.7)}×100.

First claim

The invention claimed is:

1. A copper alloy for an electronic device, wherein
the copper alloy is composed of a binary alloy of Cu and Mg,
the binary alloy consists of Mg at a content in a range of 3.3 to 6.9 atomic %, and a remainder of Cu and inevitable impurities,
a conductivity σ (% IACS) is within the following range when the content of Mg is given as A atomic %,
σ≤{1.7241/(−0.0347× A 2 +0.6569× A+ 1.7)}×100,

the copper alloy is subjected to hot working, cold working, or warm working,
and
the copper alloy substantially consists of a Cu—Mg solid solution alloy supersaturated with Mg.

2. The copper alloy for an electronic device according to claim 1 ,
wherein a Young's modulus E is in a range of 125 GPa or less, and a 0.2% proof stress σ 0.2 is in a range of 400 MPa or more.

3. A method for producing the copper alloy for an electronic device according to claim 1 , the method comprising:
a heating process of heating a copper material composed of a binary alloy of Cu and Mg to a temperature of 500 to 900° C., wherein the binary alloy consists of Mg at a content in a range of 3.3 to 6.9 atomic %, and a remainder of Cu and inevitable impurities;
a rapid cooling process of cooling the heated copper material at a cooling rate of 200° C./min or more to a temperature of 200° C. or lower; and
a working process of working the rapidly cooled copper material, whereby
obtaining the copper alloy according to claim 1 .

4. A rolled copper alloy for an electronic device, which is composed of the copper alloy for an electronic device according to claim 2 ,
wherein the rolled copper alloy is used as a copper material that constitutes a terminal, a connector, or a relay.

Assignees

• Ito Yuki
• Maki Kazunari
• Mitsubishi Materials Corp

Inventors

• Ito Yuki
• Maki Kazunari

Classifications

• C22F1/08

  of copper or alloys based thereon · CPC title

• C22C9/04

  with zinc as the next major constituent · CPC title

• C22C1/02

  by melting {(C22C1/1036 takes precedence)} · CPC title

• H01B1/026 Primary

  Alloys based on copper · CPC title

• C22C1/03

  using master alloys · CPC title