Photonic integration platform

Patent metadata

Field	Value
Publication number	US-10054745-B2
Application number	US-201715461789-A
Country	US
Kind code	B2
Filing date	Mar 17, 2017
Priority date	Jul 3, 2013
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

A SOI device may include a waveguide adapter that couples light between an external light source—e.g., a fiber optic cable or laser—and a silicon waveguide on the silicon surface layer of the SOI device. In one embodiment, the waveguide adapter is embedded into the insulator layer. Doing so may enable the waveguide adapter to be formed before the surface layer components are added onto the SOI device. Accordingly, fabrication techniques that use high-temperatures may be used without harming other components in the SOI device—e.g., the waveguide adapter is formed before heat-sensitive components are added to the silicon surface layer.

First claim

We claim:

1. A SOI optical device, comprising:
a first prong disposed on a first layer; and
a plurality of second prongs in a stacked relationship with the first prong and disposed on a plurality of layers that excludes the first layer, wherein the first prong and the plurality of second prongs are configured to at least one of receive and transmit optical energy via a coupling surface of the optical device, wherein each of the plurality of second prongs is surrounded by an insulative material different from a material of the first prong,
wherein a dimension of the first prong changes as the first prong extends away from the coupling surface,
wherein a length of the first prong in the direction that extends away from the coupling surface is greater than each of the respective lengths of the plurality of second prongs.

2. The SOI optical device of claim 1 , further comprising:
a semiconductor substrate;
an insulation layer disposed above the substrate; and
a crystalline silicon layer disposed above the insulation layer, wherein the first prong and the second prongs are disposed at least one of in and above the crystalline silicon layer.

3. The SOI optical device of claim 2 , wherein the first prong and the second prongs are disposed above the crystalline silicon layer, and wherein the silicon layer comprises a silicon waveguide that overlaps at least one of the first prong and the second prongs such that the optical energy transmitted by the first prong and the plurality of second prongs is transferred to the silicon waveguide.

4. The SOI optical device of claim 2 , wherein the first prong is located between the insulation layer and at least one of the plurality of second prongs.

5. The SOI optical device of claim 4 , wherein the first prong is located between the silicon layer and all of the plurality of second prongs.

6. The SOI optical device of claim 1 , wherein the plurality of second prongs terminates at one of: (i) the coupling surface and (ii) a plane recessed from and parallel to the coupling surface.

7. A SOI optical device, comprising:
a first waveguide disposed on a first layer; and
a plurality of second waveguides in a stacked relationship with the first waveguide and disposed on a plurality of layers that excludes the first layer, wherein the first waveguide and the plurality of second waveguides are configured to at least one of receive and transmit optical energy via a coupling surface of the optical device, wherein each of the plurality of second waveguides is surrounded by an insulative material different from a material of the first waveguide,
wherein a dimension of the first waveguide changes as the first waveguide extends away from the coupling surface,
wherein a length of the first waveguide in the direction that extends away from the coupling surface is greater than each of the respective lengths of the plurality of second waveguides.

8. The SOI optical device of claim 7 , further comprising:
a semiconductor substrate;
an insulation layer disposed above the substrate; and
a crystalline silicon layer disposed above the insulation layer, wherein the first waveguide and the second waveguides are disposed at least one of in and above the crystalline silicon layer.

9. The SOI optical device of claim 8 , wherein the first waveguide and the second waveguides are disposed above the crystalline silicon layer, and wherein the silicon layer comprises a silicon waveguide that overlaps at least one of the first waveguide and the second waveguides such that the optical energy transmitted by the first waveguide and the plurality of second waveguides is transferred to the silicon waveguide.

10. The SOI optical device of claim 8 , wherein the first waveguide is located between the insulation layer and at least one of the plurality of second waveguides.

11. The SOI optical device of claim 10 , wherein the first waveguide is located between the silicon layer and all of the plurality of second waveguides.

12. The SOI optical device of claim 7 , wherein the plurality of second waveguides terminates at one of: (i) the coupling surface and (ii) a plane recessed from and parallel to the coupling surface.

Assignees

• Cisco Tech Inc

Inventors

• Webster Mark
• Tummidi Ravi Sekhar

Classifications

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• G02B6/14

  Mode converters · CPC title

• G02B6/122

  Basic optical elements, e.g. light-guiding paths · CPC title

• G02B6/107

  Subwavelength-diameter waveguides, e.g. nanowires · CPC title

• G02B2006/12061

  Silicon · CPC title