Silicon wafer slicing device using wire discharge machining

Patent metadata

Field	Value
Publication number	US-10052703-B2
Application number	US-201514800658-A
Country	US
Kind code	B2
Filing date	Jul 15, 2015
Priority date	Jul 16, 2014
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.

First claim

What is claimed is:

1. A silicon wafer slicing apparatus using wire discharge machining comprising:
a water tank which contains an electrolyte;
a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means, wherein the cutting wire is configured to sequentially cut a plurality of points of a silicon ingot which is an object to be cut;
an ingot transferring unit which includes an electrode on which the silicon ingot is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire;
an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and
a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire such that an arc discharge and electrolysis occur between the silicon ingot fixed on the ingot transferring unit and the cutting wire, wherein the power supply is configured to supply a highest voltage when the cutting wire is cutting a first point of the silicon, and the power supply is configured to gradually reduce the supplied voltage so that a lowest voltage is supplied when the cutting wire is cutting a last point of the silicon ingot.

2. The silicon wafer slicing apparatus using wire discharge machining according to claim 1 , characterized in that a plurality of cutting wires are provided and the cutting wires are arranged to be parallel with each other in the cutting section.

3. The silicon wafer slicing apparatus using wire discharge machining according to claim 1 , characterized in that the cutting wire is made of a metal material selected from a group consisting of gold, silver, platinum, iron, copper, and nickel or of an alloy material which is made by using one material selected from the group as a main component.

4. The silicon wafer slicing apparatus using wire discharge machining according to claim 1 , characterized in that the power supply unit applies a voltage in a direct current (DC) pulse shape.

5. The silicon wafer slicing apparatus using wire discharge machining according to claim 4 , characterized in that the power supply unit alternately applies an arc discharge pulse having a relatively high voltage and an electrolytic machining pulse having a relatively low voltage.

6. The silicon wafer slicing apparatus using wire discharge machining according to claim 5 , characterized in that a peak voltage of the arc discharge pulse is 100-1000 V, and a peak voltage of the electrolytic machining pulse is 5-80 V.

7. The silicon wafer slicing apparatus using wire discharge machining according to claim 5 , characterized in that a sustaining time of the arc discharge pulse is 0.1-20 μsec.

8. The silicon wafer slicing apparatus using wire discharge machining according to claim 2 , characterized in that the power supply unit alternately applies an arc discharge pulse having a relatively high voltage and an electrolytic machining pulse having a relatively low voltage, wherein peak voltages of the arc discharge pulses applied to the cutting wires are different from each other.

Assignees

• Korea Inst Energy Res

Inventors

• Jang Bo-Yun
• Choi Sun-Ho
• Song Hee-Eun

Classifications

• B23H9/00

  Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects (heat treatment by cathodic discharge C21D1/38) · CPC title

• B23H5/02 Primary

  Electrical discharge machining combined with electrochemical machining · CPC title

• B23H7/36

  Supply or regeneration of working media · CPC title

• B23H7/02

  Wire-cutting · CPC title

• B23H7/08 Primary

  Wire electrodes · CPC title