Electro discharge machining system with batch processing of holes and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-9958855-B2
Application number	US-201314438219-A
Country	US
Kind code	B2
Filing date	Oct 25, 2013
Priority date	Oct 25, 2012
Publication date	May 1, 2018
Grant date	May 1, 2018

Abstract

An electro discharge machining system, and manufacturing method therefor, including: providing an electro discharge machining unit and control; providing a workpiece holder; providing a tool holder for a tool having an electrode array; and operatively connecting the workpiece holder and the tool holder to the electro discharge machining unit and control for batch electro-discharge machining of a workpiece to a configuration compatible with the electrode array.

First claim

What is claimed is:

1. A method of operating an electro discharge machining system comprising:
providing an electro discharge machining unit and control;
providing a workpiece holder;
providing a tool holder holding a tool having an electrode array, the tool specially made to form through silicon vias;
providing a container containing non-dielectric fluid to submerge the workpiece and the tool in the non-dielectric fluid; and
operatively connecting the workpiece holder and the tool holder to the electro discharge machining unit and control and batch electro-discharge machining an array of through holes in a silicon workpiece.

2. The method as claimed in claim 1 further comprising providing a vibrator and vibrating the workpiece and the tool relative to each other and electro discharge machining a different configuration via in the workpiece from a configuration of the electrode array.

3. The method as claimed in claim 1 , wherein the non-dielectric fluid comprises a chemical fluid comprising NaNO 3 .

4. The method as claimed in claim 1 further comprising providing the tool and producing a via in the workpiece having an aspect ratio greater than 10.

5. The method as claimed in claim 1 further comprising providing stages for the workpiece holder and the tool holder and moving the workpiece and the tool relative to each other to electro discharge machine silicon.

6. An electro discharge machining system comprising:
an electro discharge machining unit and control;
a workpiece holder;
a tool holder holding a tool having an electrode array, the tool specially made to form through silicon vias;
a container containing non-dielectric fluid to submerge the workpiece and the tool in the non-dielectric fluid; and
wherein the workpiece holder and the tool holder are operatively connected to the electro discharge machining unit and control to batch electro-discharge machine an array of through holes in a silicon workpiece.

7. The system as claimed in claim 6 further comprising a vibrator to vibrate the workpiece and the tool relative to each other to electro discharge machine a different configuration via in the workpiece from a configuration of the electrode array.

8. The system as claimed in claim 6 , wherein the non-dielectric fluid comprises a chemical fluid comprising NaNO 3 .

9. The system as claimed in claim 6 further comprising the tool to produce a via in a workpiece having an aspect ratio greater than 10.

10. The system as claimed in claim 6 further comprising stages for the workpiece holder and the tool holder to move the workpiece and the tool relative to each other to electro discharge machine of silicon.

11. A method of operating an electro discharge machining system comprising:
providing a micro electro discharge machining unit and control to provide and control an electro discharge;
providing a workpiece holder to hold a workpiece;
providing a tool holder holding a tool having an electrode array including a plurality of parallel electrodes, the tool specially made to form through silicon vias;
providing a container containing non-dielectric chemical fluid to submerge the workpiece and the tool in the non-dielectric chemical fluid; and
operatively connecting the workpiece holder and the tool holder to the electro discharge machining unit and control and batch electro-discharge machining an array of through holes in a silicon workpiece.

12. The method as claimed in claim 11 further comprising providing a vibrator and vibrating the workpiece and the tool relative to each other under 1 nm and electro discharge machining a different configuration via in the workpiece from a configuration of the electrode array.

13. The method as claimed in claim 11 , wherein the non-dielectric chemical fluid comprising NaNO 3 .

14. The method as claimed in claim 11 further comprising providing the tool and producing a via in the workpiece having an aspect ratio greater than 10 and a feature size below 5 microns.

15. The method as claimed in claim 11 further comprising providing an X-Y stage for the workpiece holder and moving a container for the silicon workpiece and a Z stage for the tool holder and moving the tool and the workpiece relative to each other for electro discharge machining to form blind or through silicon vias.

16. The system as claimed in claim 6 wherein the electrode array includes a plurality of parallel electrodes to batch electro discharge machine the workpiece.

17. The system as claimed in claim 16 further comprising a vibrator to vibrating the workpiece and the tool relative to each other under 1 nm to electro discharge machine a different configuration via in the workpiece from a configuration of the electrode array.

18. The system as claimed in claim 16 further comprising the tool to produce a via in the workpiece having an aspect ratio greater than 10 and a feature size below 5 microns.

19. The system as claimed in claim 16 further comprising an X-Y stage for the workpiece holder to move the container for the silicon workpiece and a Z stage for the tool holder to move the tool and the workpiece relative to each other to electro discharge machine to form blind or through silicon vias.

Assignees

• Applied Materials Inc

Inventors

• Ozkeskin Fatih Mert

Classifications

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H01L2924/0002

  Electricity · mapped topic