Submount and manufacturing method thereof and semiconductor laser device and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-10050411-B2
Application number	US-201514920134-A
Country	US
Kind code	B2
Filing date	Oct 22, 2015
Priority date	Oct 24, 2014
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

The method includes the steps of: preparing a single crystal SiC including an upper surface 10a and a lower surface 10b and provided with a micropipe 11 penetrating from the upper surface 10a to the lower surface 10b; forming a first seed layer 21 made of a metal material on the upper surface 10a of the single crystal SiC; and forming a first plated layer 31 on the first seed layer 21 so as to close an upper end of the micropipe 11, using an electroplating method.

First claim

What is claimed is:

1. A manufacturing method of a semiconductor laser device, comprising:
preparing a single crystal SiC including an upper surface and a lower surface and provided with a micropipe penetrating from the upper surface to the lower surface;
forming a first seed layer made of a metal material on the upper surface of the single crystal SiC;
forming a first plated layer on the first seed layer so as to close an upper end of the micropipe, using an electroplating method; and
mounting a semiconductor laser element on a lower surface side of the submount via a conductive member to close a lower end of the micropipe, wherein
the first plated layer and the conductive member do not make electrical contact.

2. The manufacturing method of a submount according to claim 1 , further comprising:
removing a part of the first plated layer from an upper surface side of the first plated layer and planarizing the upper surface of the first plated layer, after the forming the first plated layer.

3. The manufacturing method of a submount according to claim 1 , wherein the first seed layer includes at least one of Ti, Pt, Au, Ni, Pd, and Cu, and the first plated layer is made of Cu.

4. The manufacturing method of a submount according to claim 1 ,
wherein a wafer-like single crystal SiC is prepared in the preparing the single crystal SiC, and
the method further comprises:
forming a grid-like first mask on the wafer-like single crystal SiC, before the forming the first plated layer; and
removing the first mask and dividing a region from which the first mask has been removed, after the forming the first plated layer.

5. The manufacturing method of a submount according to claim 1 , wherein in the forming the first seed layer, the first seed layer is formed by a sputtering method and is formed by inclining a target surface of a sputtering target with respect to the upper surface of the single crystal SiC.

6. The manufacturing method of a submount according to claim 4 , further comprising:
forming a second mask that closes the micropipe before the forming the first seed layer; and
removing the second mask after the forming the first seed layer.

7. The manufacturing method of a semiconductor laser device according to claim 1 , wherein the first plated layer is formed only on an upper surface of the submount.

8. The manufacturing method of a semiconductor laser device according to claim 1 , wherein an intermediate layer is formed on a lower surface of the submount before the mounting the semiconductor laser element.

9. The manufacturing method of a submount according to claim 1 , wherein the single crystal SiC has a specific resistance of at least 1×10 7 Ω·cm.

10. A manufacturing method of a submount, comprising:
preparing a single crystal SiC including an upper surface and a lower surface and provided with a micropipe penetrating from the upper surface to the lower surface;
forming a first seed layer made of a metal material on the upper surface of the single crystal SiC;
forming a first plated layer on the first seed layer so as to close an upper end of the micropipe, using an electroplating method;
forming a second seed layer made of the metal material on the lower surface of the single crystal SiC;
forming a second plated layer on the second seed layer so as to close a lower end of the micropipe, using an electroplating method; and
mounting a semiconductor laser element on the second plated layer side of the submount via a conductive member, wherein
the first plated layer and the second plated layer do not make electrical contact.

11. The manufacturing method of a semiconductor laser device according to claim 10 , wherein the first plated layer and the second plated layer are formed at the same time.

12. The manufacturing method of a submount according to claim 10 , wherein the first plated layer is formed before the second plated layer is formed.

13. The manufacturing method of a submount according to claim 10 , further comprising:
removing a part of the first plated layer from an upper surface side of the first plated layer and planarizing the upper surface of the first plated layer, after the forming the first plated layer.

14. The manufacturing method of a submount according to claim 10 , wherein the first seed layer includes at least one of Ti, Pt, Au, Ni, Pd, and Cu, and the first plated layer is made of Cu.

15. The manufacturing method of a submount according to claim 10 ,
wherein a wafer-like single crystal SiC is prepared in the preparing the single crystal SiC, and
the method further comprises:
forming a grid-like first mask on the wafer-like single crystal SiC, before the forming the first plated layer; and
removing the first mask and dividing a region from which the first mask has been removed, after the forming the first plated layer.

16. The manufacturing method of a submount according to claim 10 , wherein in the forming the first seed layer, the first seed layer is formed by a sputtering method and is formed by inclining a target surface of a sputtering target with respect to the upper surface of the single crystal SiC.

17. The manufacturing method of a submount according to claim 15 , further comprising:
forming a second mask that closes the micropipe before the forming the first seed layer; and
removing the second mask after the forming the first seed layer.

Assignees

• Nichia Corp

Inventors

• Yoneda Akinori
• Sonobe Shinya
• Yuto Hiroaki

Classifications

• C23C14/185 Primary

  by cathodic sputtering · CPC title

• H01S5/02212

  Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C23C14/34

  Sputtering · CPC title

• C25D5/022

  using masking means · CPC title