Photodiode structures

Patent metadata

Field	Value
Publication number	US-10050171-B2
Application number	US-201715408012-A
Country	US
Kind code	B2
Filing date	Jan 17, 2017
Priority date	Sep 11, 2014
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

First claim

What is claimed:

1. A structure, comprising:
a waveguide structure and metal wiring layers in a dielectric material;
a single crystalline Ge structure formed in the dielectric material and-separated from the waveguide structure in the dielectric material; and
at least one metal filled via in electrical contact with the single crystalline Ge structure; and
lined vias and trenches in the dielectric material, over the single crystalline Ge structure, wherein the lined vias and trenches is a nickel seed layer.

2. The structure of claim 1 , wherein at least one capping layer is between the at least one metal filled via and the single crystalline Ge structure.

3. The structure of claim 1 , wherein the single crystalline Ge structure is adjacent to the waveguide structure.

4. The structure of claim 1 , wherein the single crystalline Ge structure is a photodector above the waveguide structure.

5. The structure of claim 1 , wherein the single crystalline Ge structure is a photodector adjacent the waveguide structure.

6. The structure of claim 1 , wherein further comprising a barrier layer between the single crystalline Ge structure and the waveguide structure.

7. The structure of claim 6 , wherein the barrier layer is nitride.

8. The structure of claim 1 , wherein the single crystalline Ge structure includes nucleation sites.

9. The structure of claim 8 , wherein the nucleation sites include a capping layer which is in direct contact with both the single crystalline Ge structure and the at least one metal filled via.

10. The structure of claim 1 , wherein the lined vias and trenches are filled with metal material.

11. A structure, comprising:
a waveguide structure and metal wiring layers in a dielectric material;
a single crystalline Ge structure formed in the dielectric material and-separated from the waveguide structure in the dielectric material;
at least one metal filled via in electrical contact with the single crystalline Ge structure; and
lined vias and trenches in the dielectric material, over the single crystalline Ge structure, wherein:
the lined vias and trenches is germanides;
the single crystalline Ge structure includes nucleation sites;
the nucleation sites include a capping layer which is in direct contact with both the single crystalline Ge structure and the at least one metal filled via; and
the capping layer is NiGe, using Ni as a seed layer.

12. The structure of claim 1 , further comprising a boundary layer in the single crystalline Ge structure.

13. The structure of claim 6 , wherein:
the single crystalline Ge structure is laterally offset from a center of the waveguide structure; and
the barrier layer separates the single crystalline Ge structure and the waveguide structure from one another such that there is no contact.

14. The structure of claim 13 , wherein the waveguide structure is composed of Si.

15. The structure of claim 13 , further comprising a boundary layer in the single crystalline Ge structure and on a side of the waveguide structure.

16. A structure, comprising:
a waveguide structure and metal wiring layers in a dielectric material;
a single crystalline Ge structure formed in the dielectric material and-separated from the waveguide structure in the dielectric material;
at least one metal filled via in electrical contact with the single crystalline Ge structure; and
a barrier layer between the single crystalline Ge structure and the waveguide structure,
wherein:
the single crystalline Ge structure is laterally offset from a center of the waveguide structure;
the barrier layer separates the single crystalline Ge structure and the waveguide structure from one another such that there is no contact; and
the at least one metal filled via is two metal filled vias in electrical contact with a capping layer of the single crystalline Ge structure, the two metal filled vias being dual damascene structures offset from a center of the waveguide structure such that they do not interfere with light entering the waveguide structure.

17. The structure of claim 1 , wherein the waveguide structure is composed of nitride material.

Assignees

• IBM

Inventors

• Ellis-Monaghan John J
• Gambino Jeffrey P
• Jaffe Mark D
• Peterson Kirk D

Classifications

• H10W44/216

  Waveguides, e.g. strip lines · CPC title

• G02B6/12004

  Combinations of two or more optical elements · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• H01P3/16

  Dielectric waveguides, i.e. without a longitudinal conductor · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title