Semiconductor film, method of producing semiconductor film, solar cell, light-emitting diode, thin film transistor, and electronic device

Patent metadata

Field	Value
Publication number	US-10050161-B2
Application number	US-201514699817-A
Country	US
Kind code	B2
Filing date	Apr 29, 2015
Priority date	Oct 31, 2012
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C):

wherein, in Formula (A), X 1 represents —SH, —NH 2 , or —OH; and each of A 1 and B 1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A 1 and B 1 are both hydrogen atoms, X 1 represents —SH or —OH; in Formula (B), X 2 represents —SH, —NH 2 , or —OH; and each of A 2 and B 2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), A 3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.

First claim

What is claimed is:

1. A semiconductor film, comprising:
an assembly of semiconductor quantum dots containing a metal atom; and
at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from the group consisting of a ligand represented by the following Formula (A), a ligand represented by the following Formula (B), and a ligand represented by the following Formula (C):

wherein, in Formula (A), X 1 represents —SH, —NH 2 , or —OH; and each of A 1 and B 1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A 1 and B 1 are both hydrogen atoms, X 1 represents —SH or —OH;
in Formula (B), X 2 represents —SH, —NH 2 , or —OH; and each of A 2 and B 2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms;
in Formula (C), A 3 represents a hydrogen atom or a substituent having from 1 to 10 atoms; and
the semiconductor quantum dots have an average shortest interdot distance of less than 0.45 nm.

2. The semiconductor film according to claim 1 , wherein each of A 1 , B 1 , A 2 , B 2 , and A 3 independently represents a hydrogen atom or a substituent having 7 or fewer atoms.

3. The semiconductor film according to claim 1 , wherein A 1 , B 1 , A 2 , B 2 , and A 3 are hydrogen atoms.

4. The semiconductor film according to claim 1 , wherein the at least one ligand is at least one selected from the group consisting of 2-aminoethanethiol, 2-aminoethanol, 3-amino-1-propanol, a 2-aminoethanethiol derivative, a 2-aminoethanol derivative, and a 3-amino-1-propanol derivative.

5. The semiconductor film according to claim 1 , wherein the at least one ligand is represented by Formula (A) and forms a 5-membered ring chelate together with the metal atom in the semiconductor quantum dots.

6. The semiconductor film according to claim 1 , wherein a complex stability constant log β 1 between the at least one ligand and the metal atom of the semiconductor quantum dots is 8 or higher.

7. The semiconductor film according to claim 1 , wherein the semiconductor quantum dots have an average shortest interdot distance of less than 0.30 nm.

8. The semiconductor film according to claim 1 , wherein the semiconductor quantum dots have an average shortest interdot distance of less than 0.20 nm.

9. The semiconductor film according to claim 1 , wherein the semiconductor quantum dots contain at least one selected from the group consisting of PbS, PbSe, InN, InAs, InSb, and InP.

10. The semiconductor film according to claim 9 , wherein the semiconductor quantum dots contain PbS.

11. The semiconductor film according to claim 1 , wherein the semiconductor quantum dots have an average particle diameter of from 2 nm to 15 nm.

12. A solar cell, comprising the semiconductor film according to claim 1 .

13. A light-emitting diode, comprising the semiconductor film according to claim 1 .

14. A thin film transistor, comprising the semiconductor film according to claim 1 .

15. An electronic device, comprising the semiconductor film according to claim 1 .

16. A method of producing the semiconductor film of claim 1 , the method comprising:
a semiconductor quantum dot assembly forming step of applying, onto a substrate, a semiconductor quantum dot dispersion liquid containing semiconductor quantum dots containing a metal atom, a first ligand coordinated to the semiconductor quantum dots, and a first solvent, and thereby forming an assembly of the semiconductor quantum dots; and
a ligand exchange step of applying, to the assembly of the semiconductor quantum dots, a solution containing a second solvent and a second ligand that has a shorter molecular chain length than the first ligand and that is at least one selected from the group consisting of a ligand represented by the following Formula (A), a ligand represented by the following Formula (B), and a ligand represented by the following Formula (C), and thereby exchanging the first ligand coordinated to the semiconductor quantum dots with the second ligand:

wherein, in Formula (A), X 1 represents —SH, —NH 2 , or —OH; and each of A 1 and B 1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A 1 and B 1 are both hydrogen atoms, X 1 represents —SH or —OH;
in Formula (B), X 2 represents —SH, —NH 2 , or —OH; and each of A 2 and B 2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and
in Formula (C), A 3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.

17. The method of producing a semiconductor film according to claim 16 , wherein the first ligand is a ligand having a main chain having 6 or more carbon atoms.

18. The method of producing a semiconductor film according to claim 16 , wherein each of the semiconductor quantum dot assembly forming step and the ligand exchange step is carried out two or more times.

19. The method of producing a semiconductor film according to claim 16 , wherein each of A 1 , B 1 , A 2 , B 2 , and A 3 independently represents a hydrogen atom or a substituent having 7 or fewer atoms.

20. The method of producing a semiconductor film according to claim 16 , wherein A 1 , B 1 , A 2 , B 2 , and A 3 are hydrogen atoms.

21. The method of producing a semiconductor film according to claim 16 , wherein the second ligand is at least one selected from the group consisting of 2-aminoethanethiol, 2-aminoethanol, 3-amino-1-propanol, a 2-aminoethanethiol derivative, a 2-aminoethanol derivative, and a 3-amino-1-propanol derivative.

22. The method of producing a semiconductor film according to claim 16 , wherein, in the ligand exchange step, the second ligand is represented by Formula (A) and forms a 5-membered ring chelate together with the metal atom in the semiconductor quantum dots.

23. The method of producing a semiconductor film according to claim 16 , wherein the semiconductor quantum dots contain at least one selected from the group consisting of PbS, PbSe, InN, InAs, InSb, and InP.

24. The method of producing a semiconductor film according to claim 23 , wherein the semiconductor quantum dots contain PbS.

25. The method of producing a semiconductor film according to claim 16 , wherein the semiconductor quantum dots have an average particle diameter of from 2 nm to 15 nm.

Assignees

• Fujifilm Corp

Inventors

• Ono Masashi
• Kikuchi Makoto
• Tanaka Atsushi
• Suzuki Masayuki
• Kanemitsu Yoshihiko

Classifications

• H10P14/3461

  Nanoparticles · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3422

  Antimonides · CPC title

• H10P14/3421

  Arsenides · CPC title

• H10P14/3416

  Nitrides · CPC title