Slurry composition for chemical mechanical polishing, method of preparing the same, and polishing method using the same

Patent metadata

Field	Value
Publication number	US-10047248-B2
Application number	US-201615293816-A
Country	US
Kind code	B2
Filing date	Oct 14, 2016
Priority date	Oct 15, 2015
Publication date	Aug 14, 2018
Grant date	Aug 14, 2018

Abstract

A slurry composition for the CMP process includes a dispersion medium, and ceria particles having a NO3 functional group bonded to surfaces thereof. The ceria particles are contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium.

First claim

What is claimed is:

1. A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
a dispersion medium; and
ceria particles having a NO 3 functional group bonded to surfaces thereof, the ceria particles being contained in an amount of about 0.1 parts by weight to about 15 parts by weight based on 100 parts by weight of the dispersion medium wherein an oxidizer is not included in the slurry composition.

2. The slurry composition of claim 1 , wherein a pH value of the slurry composition ranges from 1 to 9.

3. The slurry composition of claim 2 , further comprising a pH control agent.

4. The slurry composition of claim 1 , wherein a Fourier-transform infrared spectroscopy (FT-IR) spectrum for the ceria particles has a peak at a position ranging from about 1250 cm −1 to about 1400 cm −1 or a position ranging from about 1500 cm −1 to about 1.700 cm −1 .

5. The slurry composition of claim 1 , wherein a zeta potential value of the ceria particles is larger than 0 in at least a pH range of 0 to 9.5.

6. The slurry composition of claim 1 , wherein a polishing accelerator is not included in the slurry composition.

7. The slurry composition of claim 1 , wherein the ceria particles have an average particle diameter of about 1 nm to about 150 nm.

8. The slurry composition of claim 7 , wherein the ceria particles have an average particle diameter of about 1 nm to about 80 nm.

9. The slurry composition of claim 8 , wherein a polishing rate ranges from about 3000 Å/min to about 6000 Å/min when the CMP process is performed using the slurry composition at a pH value of about 7.0 and while applying a pressure of about 4 psi to a silicon oxide layer.

10. The slurry composition of claim 8 , wherein a polishing rate ranges from about 400 Å/min to about 1000 Å/min when the CMP process is performed using the slurry composition at a pH value of about 2.0 and while applying a pressure of about 4 psi to a silicon oxide layer.

11. The slurry composition of claim 8 , wherein a polishing rate ranges from about 400 Å/min to about 1000 Å/min when the CMP process is performed using the slurry composition at a pH value of about 2.0 and while applying a pressure of about 4 psi to one of a tungsten (W) layer and a copper (Cu) layer.

12. The slurry composition of claim 8 , wherein a polishing rate ranges from about 50 Å/min to about 400 Å/min when the CMP process is performed using the slurry composition at a pH value of about 2.0 and while applying a pressure of about 4 psi to a silicon nitride layer.

13. A slurry composition for a chemical mechanical polishing (CMP) process, the slurry composition comprising:
ceramic particles having a surface-modifying functional group bonded to surfaces thereof, the surface-modifying functional group including at least one of a nitrate group (NO 3 ), a carbonate group (CO 3 ), a sulfate group (SO 4 ), an oxalate group (C 2 O 4 ), and a methane sulfonate group (CH 3 SO 3 );
a pH control agent; and
a dispersion medium wherein an oxidizer is not included in the slurry composition.

14. The slurry composition of claim 13 , wherein the ceramic particles include at least one of ceria, silica, alumina, and titania.

15. The slurry composition of claim 13 , wherein the ceramic particles have an average particle diameter of about 1 nm to about 150 nm.

16. The slurry composition of claim 13 , wherein the ceramic particles are contained in an amount of about 0.1 to 15 parts by weight based on 100 parts by weight of the dispersion medium.

17. The slurry composition of claim 16 , wherein a polishing accelerator is not contained in the slurry composition, the polishing accelerator being one of an anionic oligomer, an anionic polymer, hydroxyl acid, and amino acid.

Assignees

• Samsung Electronics Co Ltd
• Univ Hanyang Ind Univ Coop Found

Inventors

• Kim Ye-Hwan
• Paik Un-Gyu
• Seo Ji-Hoon

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• B24B37/00

  Lapping machines or devices; Accessories (B24B3/00 takes precedence) · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title