Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device
US-2016024005-A1 · Jan 28, 2016 · US
US10047046B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10047046-B2 |
| Application number | US-201715443575-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 27, 2017 |
| Priority date | Feb 29, 2016 |
| Publication date | Aug 14, 2018 |
| Grant date | Aug 14, 2018 |
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A salt having a group represented by the formula (aa): wherein X a and X b independently each represent an oxygen atom or a sulfur atom, the ring W represents a C3-C36 heterocyclic ring which has an ester bond or a thioester bond, said heterocyclic ring optionally further having an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group each by which a methylene group has been replaced, and said heterocyclic ring optionally having a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups each by which a hydrogen atom has been replaced, and * represents a binding position.
Opening claim text (preview).
What is claimed is: 1. A salt which has an anion represented by formula (aa2): wherein X a and X b independently each represent an oxygen atom or a sulfur atom, the ring W represents a C3-C36 heterocyclic ring which has an ester bond or a thioester bond, said heterocyclic ring optionally further having an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group each by which a methylene group has been replaced, and said heterocyclic ring optionally having a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups each by which a hydrogen atom has been replaced, the ring W1 represents a C3-C36 alicyclic hydrocarbon group in which a methylene group can be replaced by an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group, and in which a hydrogen atom can be replaced by a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups, L b1 represents a group represented by formula (b1-1), formula (b1-2) or formula (b1-3): wherein L b2 represents a single bond or a C1-C22 divalent saturated hydrocarbon group where a hydrogen atom may be replaced by a fluorine atom, and L b3 represents a single bond or a C1-C22 divalent saturated hydrocarbon group where a hydrogen atom may be replaced by a hydroxyl group or a fluorine atom and where a methylene group may be replaced by an oxygen atom or carbonyl group, provided that total number of the carbon atoms of L b2 and L b3 is up to 22, L b4 represents a C1-C22 divalent saturated hydrocarbon group where a hydrogen atom may be replaced by a fluorine atom, and L b5 represents a single bond or a C1-C22 divalent saturated hydrocarbon group where a hydrogen atom may be replaced by a hydroxyl group or a fluorine atom and where a methylene group may be replaced by an oxygen atom or carbonyl group, provided that the total carbon atoms of L b4 and L b5 is up to 22, L b6 represents a single bond or a C1-C23 divalent saturated hydrocarbon group where a hydrogen atom may be replaced by a fluorine atom, and L b7 represents a single bond or a C1-C22 divalent saturated hydrocarbon group where a hydrogen atom may be replaced by a hydroxyl group or a fluorine atom and where a methylene group may be replaced by an oxygen atom or carbonyl group, with the proviso that total carbon number of L b6 and L b7 is up to 23 and with the proviso that formula (b1-3) excludes a group having a structure represented by -L b6 -O—CO—, and * represents a binding position to the ring W1, and Q 1 and Q 2 independently each represent a fluorine atom or a C1-C6 perfluoroalkyl group. 2. The salt according to claim 1 , wherein the ring W1 is represented by the formula (W1-1), (W1-2) or (W1-3): in which a methylene group can be replaced by an oxygen atom, a sulfur atom, a carbonyl group or a sulfonyl group, and in which a hydrogen atom can be replaced by a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups. 3. The salt according to claim 1 wherein L b1 represents -*1-CO—O—(CH 2 ) t — where t represents an integer of 0 to 6, and *1 represents a binding position to —C(Q 1 )(Q 2 )-. 4. The salt according to claim 1 , wherein the ring W1 is represented by the formula (W-1), (W-2), (W-16) or (W1-17): in which a hydrogen atom can be replaced by a hydroxyl group, a cyano group, a carboxyl group, a C1-C12 alkyl group, a C1-C12 alkoxy group, a C2-C13 alkoxycarbonyl group, a C2-C13 acyl group, a C2-C13 acyloxy group, a C3-C12 alicyclic hydrocarbon group, a C6-C10 aromatic hydrocarbon group or any combination of these groups, *1 represents a binding position to one of X a and X b , and *2 represents a binding position to the other of X a and X b . 5. An acid generator comprising the salt according to claim 1 . 6. A photoresist composition comprising the acid generator according to claim 5 and a resin which comprises a structural unit having an acid-labile group. 7. The photoresist composition according to claim 6 which further comprises a salt generating an acid weaker in acidity than an acid generated from the acid generator. 8. A process for producing a photoresist pattern comprising the following steps (1) to (5): (1) a step of applying the photoresist composition according to claim 6 on a substrate, (2) a step of forming a photoresist film by conducting drying, (3) a step of exposing the photoresist film to radiation, (4) a step of baking the exposed photoresist film, and (5) a step of developing the baked photoresist film with an alkaline developer, thereby forming a photoresist pattern.
using lasers · CPC title
Photolithographic processes · CPC title
containing no aromatic rings in the alcohol moiety · CPC title
characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title
with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence) · CPC title
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