In-situ etch rate determination for chamber clean endpoint
US-2016314944-A1 · Oct 27, 2016 · US
US10043641B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10043641-B2 |
| Application number | US-201615273631-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 22, 2016 |
| Priority date | Sep 22, 2016 |
| Publication date | Aug 7, 2018 |
| Grant date | Aug 7, 2018 |
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Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments include a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from the selected area during the cleaning process. The selected area is chosen based on being the expected location of the last cleaning reaction during the cleaning process within the processing chamber (e.g., a corner in a rectangular chamber). Numerous other aspects are provided.
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What is claimed is: 1. An apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber, the apparatus comprising: a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a zoom lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from a cleaning reaction in the selected area during the cleaning process, wherein the selected area is chosen based on being an expected location of a last cleaning reaction during the cleaning process within the processing chamber. 2. The apparatus of claim 1 further including a computer operative to execute an application and communicatively coupled to the spectrometer, wherein the application includes instructions stored in a memory of the computer and adapted to direct the computer to monitor the spectrum measurements of the spectrometer. 3. The apparatus of claim 2 wherein the instructions include further instructions to generate a signal when the spectrum measurements are below a predefined threshold value indicating a cleaning endpoint has been reached. 4. The apparatus of claim 1 wherein the lens system includes multiple lenses operative to magnify the selected area. 5. The apparatus of claim 1 wherein the selected area is in a corner of the processing chamber. 6. The apparatus of claim 5 wherein the selected area is on at least one of a susceptor, a diffuser plate, and a wall of the processing chamber. 7. The apparatus of claim 1 wherein the cleaning process is a plasma cleaning process. 8. A method of detecting a cleaning endpoint of a cleaning process performed within a processing chamber, the method comprising: performing a cleaning process within a processing chamber; focusing a zoom lens system on a selected area within the processing chamber via a viewport during the cleaning process; amplifying an intensity of radiation from a cleaning reaction in the selected area during the cleaning process; and measuring a spectrum response over time of the cleaning reaction within the processing chamber during the cleaning process using a spectrometer coupled to the lens system, wherein the selected area is chosen based on being an expected location of a last cleaning reaction during the cleaning process within the processing chamber. 9. The method of claim 8 further including executing instructions stored in a memory of a computer commutatively coupled to the spectrometer and adapted to direct the computer to monitor the spectrum response measured by the spectrometer. 10. The method of claim 9 wherein the instructions include further instructions to generate a signal when the spectrum measurements are below a predefined threshold value indicating a cleaning endpoint has been reached. 11. The method of claim 8 wherein amplifying an intensity of radiation from the cleaning reaction in the selected area includes magnifying the selected area using multiple lenses within the lens system. 12. The method of claim 8 wherein the selected area is in a corner of the processing chamber. 13. The method of claim 8 wherein the selected area is on at least one of a susceptor, a diffuser plate, and a wall of the processing chamber. 14. The method of claim 8 wherein the cleaning process is a plasma cleaning process. 15. A system for processing substrates, the system comprising: a processing chamber operative to process substrates; and a cleaning endpoint detection apparatus including a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within the processing chamber during a cleaning process and a zoom lens system coupled to the spectrometer and disposed to focus on a selected area within the processing chamber via a viewport and to amplify intensity of radiation from a cleaning reaction in the selected area during the cleaning process, wherein the selected area is chosen based on being an expected location of a last cleaning reaction during the cleaning process within the processing chamber. 16. The system of claim 15 further including a computer operative to execute an application and communicatively coupled to the spectrometer, wherein the application includes instructions stored in a memory of the computer and adapted to direct the computer to monitor the spectrum measurements of the spectrometer. 17. The system of claim 16 wherein the instructions include further instructions to generate a signal when the spectrum measurements are below a predefined threshold value indicating a cleaning endpoint has been reached. 18. The system of claim 15 wherein the lens system includes multiple lenses operative to magnify the selected area. 19. The system of claim 15 wherein the selected area is in a corner of the processing chamber. 20. The system of claim 15 wherein the selected area is on at least one of a wall, a susceptor, and a diffuser plate of the processing chamber.
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