Method for forming fine patterns
US-2017348729-A1 · Dec 7, 2017 · US
US10042256B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10042256-B2 |
| Application number | US-201615168665-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 31, 2016 |
| Priority date | Sep 30, 2015 |
| Publication date | Aug 7, 2018 |
| Grant date | Aug 7, 2018 |
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A method of manufacturing a wire grid pattern includes providing a laminate having a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by irradiation of first light; and irradiating the laminate with second light. The adhesive layer may comprise a silane coupling agent.
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a wire grid pattern, comprising: providing a laminate comprising a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by contacting with a patterned stamp and irradiating with a first light; determining if the patterned resin layer is defective; irradiating the laminate with a second light when the patterned resin layer is determined to be defective to release the adhesive layer and the patterned resin layer, recoating the adhesive layer and reforming the patterned resin layer by contacting with a patterned stamp and irradiating with the first light; and etching the metal layer using the patterned resin layer as a hard mask when the patterned resin layer is not defective, wherein the adhesive layer contains a compound represented by Chemical Formula 3-1 below: wherein in the formula 3-1, R 1 and R 2 are each independently any one of —CH 3 , —OCH 2 CH 3 , —OCH 3 , and a functional group represented by Chemical Formula 3-2 below, and wherein in the formulae 3-1 and 3-2, R 3 is any one of an acrylate group and a methacrylate group, and n is an integer of 1 to 10. 2. The method of claim 1 , wherein the providing of the laminate comprises: preparing the base member; forming the metal layer on the base member; forming the mask layer containing a metal oxide on the metal layer; forming the adhesive layer on the mask layer and baking the adhesive layer; forming the resin layer on the adhesive layer; transferring a pattern to the resin layer using the patterned stamp; and irradiating the adhesive layer and the resin layer with the first light. 3. The method of claim 1 , wherein the second light has a wavelength of 350 nm to 370 nm. 4. The method of claim 1 , wherein the patterned resin layer comprises a photoinitiator. 5. The method of claim 1 , wherein a wavelength of the first light is different from a wavelength of the second light. 6. The method of claim 1 , wherein the metal layer comprises one or more materials selected from the group consisting of any one metal of aluminum, gold, silver, copper, chromium, iron, nickel, molybdenum, and titanium, an oxide of the any one metal, and an alloy of the any one metal. 7. A method of manufacturing a wire grid pattern, comprising: providing a laminate comprising a base member, a metal layer disposed on the base member, a mask layer disposed on the metal layer and containing a metal oxide, an adhesive layer disposed on the mask layer, and a patterned resin layer disposed on the adhesive layer and formed by contacting with a patterned stamp and irradiating with a first light; determining if the patterned resin layer is defective; irradiating the laminate with a second light and treating the laminate with an acid when the patterned resin layer is determined to be defective to release the adhesive layer and the patterned resin layer, recoating the adhesive layer and reforming the patterned resin layer by contacting with a patterned stamp and irradiating with the first light; and etching the metal layer using the patterned resin layer as a hard mask when the patterned resin layer is not defective, wherein the adhesive layer comprises a compound represented by Chemical Formula 1-1 below: wherein in the formula 1-1, R 1 and R 2 are each independently any one of —CH 3 , —OCH 2 CH 3 , —OCH 3 , and a functional group represented by Chemical Formula 1-2 below, and wherein in the formulae 1-1 and 1-2, R 3 is any one of an acrylate group and a methacrylate group, and n is an integer of 1 to 10. 8. The method of claim 7 , wherein the second light has a wavelength of 500 nm to 600 nm.
Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title
Local etching · CPC title
Recycling of unreacted starting or intermediate materials · CPC title
Preparation; Treatments not provided for in C07F7/20 · CPC title
comprising electrically conductive elements, e.g. wire grids, conductive particles · CPC title
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