Optical critical dimension metrology

Patent metadata

Field	Value
Publication number	US-10041838-B2
Application number	US-201515120847-A
Country	US
Kind code	B2
Filing date	Feb 23, 2015
Priority date	Feb 23, 2014
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

A metrology system is presented for measuring parameters of a structure. The system comprises: an optical system and a control unit. The optical system is configured for detecting light reflection of incident radiation from the structure and generating measured data indicative of angular phase of the detected light components corresponding to reflections of illuminating light components having different angles of incidence. The control unit is configured for receiving and processing the measured data and generating a corresponding phase map indicative of the phase variation along at least two dimensions, and analyzing the phase map using modeled data for determining one or more parameters of the structure.

First claim

The invention claimed is:

1. A metrology system for measuring parameters of a structure, the metrology system being configured for performing Optical Critical Dimension (OCD) measurements and comprising:
an optical system configured for detecting light reflection of incident radiation from the structure and generating measured data indicative of angular phase of the detected light components corresponding to reflections of illuminating light components having different angles of incidence, wherein the optical system comprises imaging and focusing lenses configured to create an image of a pupil of the optical system on a phase detector, thereby providing the measured data indicative of a two-dimensional phase map of the pupil, and
a control unit configured for receiving and processing the measured data and generating a corresponding two-dimensional phase map of the pupil indicative of the phase variation along at least two dimensions, and analyzing the phase map using modeled data for determining one or more parameters of the structure.

2. A metrology system according to claim 1 , wherein said at least two dimensions comprise angular data on the structure along two axes.

3. A metrology system according to claim 2 , wherein said at least two dimensions comprise position data on the structure along the two axes and additionally comprise spectral data.

4. A metrology system according to claim 1 , wherein said at least two dimensions comprise angular data on the structure along one axis and spectral data.

5. A metrology system according to claim 1 , wherein said optical system is configured and operable for illuminating the structure with one or more wavelengths, and detecting the light reflection for said one or more wavelengths.

6. A metrology system according to claim 5 , wherein said optical system is configured and operable for illuminating the structure with multiple wavelengths, either concurrently or sequentially.

7. A metrology system according to claim 1 , wherein the optical system is configured for implementing one or more polarization schemes, for illuminating the structure with light of a specific polarization, and detecting reflected light of desired polarization, such that the angular phase in the measured data is a function of polarization.

8. A method for use in Optical critical Dimension (OCD) measurements of one or more parameters of a structure, the method comprising:
performing measurements on the structure, the measurements comprising collecting reflections of illuminating light components having different angles of incidence onto the structure, via a pupil of an optical system and creating an image of the pupil on a phase detector, thereby providing measured data corresponding to a phase map of the pupil indicative of the phase variation along at least two dimensions, and
analyzing the phase map using modeled data for determining one or more parameters of the structure.

9. A method of claim 8 , wherein said structure is a multi-layer structure.

10. A method of claim 8 , wherein said structure is a semiconductor wafer.

11. A method of claim 8 , wherein said one or more parameters of the structure comprise one or more of the following: critical dimensions (CD), side wall angle (SWA), thicknesses, refractive indices.

Assignees

• Nova Measuring Instr Ltd

Inventors

• Barak Gilad
• Shafir Dror
• Grossman Danny

Classifications

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N21/956 Primary

  Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)} · CPC title

• G01N2201/12

  Circuits of general importance; Signal processing · CPC title

• G01J9/02

  by interferometric methods (using interferometers for measuring optically the linear dimensions of objects G01B9/02) · CPC title